The alternative route of low-temperature preparation of highly oriented lead zirconate titanate thin films by high gas-pressure processing

X. D. Zhang; X. J. Meng; J. L. Sun; T. Lin; J. H. Ma; J. H. Chu; N. Wang; Joonghoe Dho

doi:10.1557/JMR.2008.0365

The alternative route of low-temperature preparation of highly oriented lead zirconate titanate thin films by high gas-pressure processing

X. D. Zhang, X. J. Meng, J. L. Sun, T. Lin, J. H. Ma, J. H. Chu, N. Wang, Joonghoe Dho

Department of Physics

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

The Pb(Zr_xTi_1-x)O₃ (PZT) films sputter deposited on LaNiO₃(LNO)/Si(100) substrates were recrystallized to highly (100)-oriented perovskite structure by high oxygen-pressure processing (HOPP) and high argon-pressure processing (HAPP), which were performed at a relatively low temperature 400 °C compared to the normally required temperature condition above 600 °C. Ferroelectricity of PZT films was investigated by a measurement of P-E hysteresis loop. The P-E hysteresis loops of the PZT(52/48) and PZT(30/70) films after HOPP showed better squareness and larger remnant polarization than those of as-sputtered ones prepared at a high temperature of 600 °C. Although the PZT films with HAPP also showed a high (100)-oriented perovskite structure and obvious ferroelectricity, their P-E loops suggested relatively poor ferroelectricity compared to those of the PZT films with HOPP. This means that a further optimization for HAPP is needed to improve ferroelectricity of PZT films.

Original language	English
Pages (from-to)	2846-2853
Number of pages	8
Journal	Journal of Materials Research
Volume	23
Issue number	11
DOIs	https://doi.org/10.1557/JMR.2008.0365
State	Published - Nov 2008

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title = "The alternative route of low-temperature preparation of highly oriented lead zirconate titanate thin films by high gas-pressure processing",

abstract = "The Pb(ZrxTi1-x)O3 (PZT) films sputter deposited on LaNiO3(LNO)/Si(100) substrates were recrystallized to highly (100)-oriented perovskite structure by high oxygen-pressure processing (HOPP) and high argon-pressure processing (HAPP), which were performed at a relatively low temperature 400 °C compared to the normally required temperature condition above 600 °C. Ferroelectricity of PZT films was investigated by a measurement of P-E hysteresis loop. The P-E hysteresis loops of the PZT(52/48) and PZT(30/70) films after HOPP showed better squareness and larger remnant polarization than those of as-sputtered ones prepared at a high temperature of 600 °C. Although the PZT films with HAPP also showed a high (100)-oriented perovskite structure and obvious ferroelectricity, their P-E loops suggested relatively poor ferroelectricity compared to those of the PZT films with HOPP. This means that a further optimization for HAPP is needed to improve ferroelectricity of PZT films.",

author = "Zhang, {X. D.} and Meng, {X. J.} and Sun, {J. L.} and T. Lin and Ma, {J. H.} and Chu, {J. H.} and N. Wang and Joonghoe Dho",

year = "2008",

month = nov,

doi = "10.1557/JMR.2008.0365",

language = "English",

volume = "23",

pages = "2846--2853",

journal = "Journal of Materials Research",

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T1 - The alternative route of low-temperature preparation of highly oriented lead zirconate titanate thin films by high gas-pressure processing

AU - Zhang, X. D.

AU - Meng, X. J.

AU - Sun, J. L.

AU - Lin, T.

AU - Ma, J. H.

AU - Chu, J. H.

AU - Wang, N.

AU - Dho, Joonghoe

PY - 2008/11

Y1 - 2008/11

N2 - The Pb(ZrxTi1-x)O3 (PZT) films sputter deposited on LaNiO3(LNO)/Si(100) substrates were recrystallized to highly (100)-oriented perovskite structure by high oxygen-pressure processing (HOPP) and high argon-pressure processing (HAPP), which were performed at a relatively low temperature 400 °C compared to the normally required temperature condition above 600 °C. Ferroelectricity of PZT films was investigated by a measurement of P-E hysteresis loop. The P-E hysteresis loops of the PZT(52/48) and PZT(30/70) films after HOPP showed better squareness and larger remnant polarization than those of as-sputtered ones prepared at a high temperature of 600 °C. Although the PZT films with HAPP also showed a high (100)-oriented perovskite structure and obvious ferroelectricity, their P-E loops suggested relatively poor ferroelectricity compared to those of the PZT films with HOPP. This means that a further optimization for HAPP is needed to improve ferroelectricity of PZT films.

AB - The Pb(ZrxTi1-x)O3 (PZT) films sputter deposited on LaNiO3(LNO)/Si(100) substrates were recrystallized to highly (100)-oriented perovskite structure by high oxygen-pressure processing (HOPP) and high argon-pressure processing (HAPP), which were performed at a relatively low temperature 400 °C compared to the normally required temperature condition above 600 °C. Ferroelectricity of PZT films was investigated by a measurement of P-E hysteresis loop. The P-E hysteresis loops of the PZT(52/48) and PZT(30/70) films after HOPP showed better squareness and larger remnant polarization than those of as-sputtered ones prepared at a high temperature of 600 °C. Although the PZT films with HAPP also showed a high (100)-oriented perovskite structure and obvious ferroelectricity, their P-E loops suggested relatively poor ferroelectricity compared to those of the PZT films with HOPP. This means that a further optimization for HAPP is needed to improve ferroelectricity of PZT films.

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DO - 10.1557/JMR.2008.0365

M3 - Article

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SN - 0884-2914

VL - 23

SP - 2846

EP - 2853

JO - Journal of Materials Research

JF - Journal of Materials Research

IS - 11

ER -

The alternative route of low-temperature preparation of highly oriented lead zirconate titanate thin films by high gas-pressure processing

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