The band-gap energy dependence of metal oxides on non-linear characteristics in the HfO2-based resistive random access memory

Sangheon Lee; Daeseok Lee; Jiyong Woo; Euijun Cha; Jaesung Park; Kibong Moon; Jeonghwan Song; Hyunsang Hwang

doi:10.1016/j.mee.2015.04.120

The band-gap energy dependence of metal oxides on non-linear characteristics in the HfO₂-based resistive random access memory

Sangheon Lee
, Daeseok Lee
, Jiyong Woo
, Euijun Cha
, Jaesung Park
, Kibong Moon
, Jeonghwan Song
, Hyunsang Hwang

School of Electronics Engineering

Pohang University of Science and Technology

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

In this paper, the influence of the band-gap energy of metal oxide layers on the non-linearity of the device had been investigated. The band-gap energy of the metal oxide layer determines barrier height of tunneling between metal oxides and electrodes for tunneling mechanisms. The optimum barrier height between the metal oxides and electrodes exhibits high non-linear characteristics of the device for low leakage current of the cross-point array applications with excellent switching uniformity.

Original language	English
Pages (from-to)	321-324
Number of pages	4
Journal	Microelectronic Engineering
Volume	147
DOIs	https://doi.org/10.1016/j.mee.2015.04.120
State	Published - 1 Nov 2015

Keywords

Band-gap energy
Non-linearity
ReRAM

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10.1016/j.mee.2015.04.120

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title = "The band-gap energy dependence of metal oxides on non-linear characteristics in the HfO2-based resistive random access memory",

abstract = "In this paper, the influence of the band-gap energy of metal oxide layers on the non-linearity of the device had been investigated. The band-gap energy of the metal oxide layer determines barrier height of tunneling between metal oxides and electrodes for tunneling mechanisms. The optimum barrier height between the metal oxides and electrodes exhibits high non-linear characteristics of the device for low leakage current of the cross-point array applications with excellent switching uniformity.",

keywords = "Band-gap energy, Non-linearity, ReRAM",

author = "Sangheon Lee and Daeseok Lee and Jiyong Woo and Euijun Cha and Jaesung Park and Kibong Moon and Jeonghwan Song and Hyunsang Hwang",

note = "Publisher Copyright: {\textcopyright} 2015 Published by Elsevier B.V.",

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doi = "10.1016/j.mee.2015.04.120",

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T1 - The band-gap energy dependence of metal oxides on non-linear characteristics in the HfO2-based resistive random access memory

AU - Lee, Sangheon

AU - Lee, Daeseok

AU - Woo, Jiyong

AU - Cha, Euijun

AU - Park, Jaesung

AU - Moon, Kibong

AU - Song, Jeonghwan

AU - Hwang, Hyunsang

PY - 2015/11/1

Y1 - 2015/11/1

N2 - In this paper, the influence of the band-gap energy of metal oxide layers on the non-linearity of the device had been investigated. The band-gap energy of the metal oxide layer determines barrier height of tunneling between metal oxides and electrodes for tunneling mechanisms. The optimum barrier height between the metal oxides and electrodes exhibits high non-linear characteristics of the device for low leakage current of the cross-point array applications with excellent switching uniformity.

AB - In this paper, the influence of the band-gap energy of metal oxide layers on the non-linearity of the device had been investigated. The band-gap energy of the metal oxide layer determines barrier height of tunneling between metal oxides and electrodes for tunneling mechanisms. The optimum barrier height between the metal oxides and electrodes exhibits high non-linear characteristics of the device for low leakage current of the cross-point array applications with excellent switching uniformity.

KW - Band-gap energy

KW - Non-linearity

KW - ReRAM

UR - https://www.scopus.com/pages/publications/84929304608

U2 - 10.1016/j.mee.2015.04.120

DO - 10.1016/j.mee.2015.04.120

M3 - Article

AN - SCOPUS:84929304608

SN - 0167-9317

VL - 147

SP - 321

EP - 324

JO - Microelectronic Engineering

JF - Microelectronic Engineering

ER -

The band-gap energy dependence of metal oxides on non-linear characteristics in the HfO₂-based resistive random access memory

Abstract

Keywords

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