The characteristics of organic thin film transistors with high-k dielectrics

Chang Su Kim; Woo Jin Kim; Sung Jin Jo; Hong Koo Baik

The characteristics of organic thin film transistors with high-k dielectrics

Chang Su Kim, Woo Jin Kim, Sung Jin Jo, Hong Koo Baik

School of Energy Engineering

Yonsei University

Research output: Contribution to journal › Conference article › peer-review

Abstract

We report on the structural and electrical properties of amorphous Yttria-stabilized zirconia (YSZ) thin films which are the potential high-k gate dielectric material of organic thin film transistor (OTFT). To investigate the influence of t he oxygen flow rate o n the s tructural and electrical properties of the YSZ films, XRD, XPS, J-E, I-V were carried out in this work. Oxygen vacancies are expected to be the most predominant type of defect in metal-oxide dielectrics. The leakage current density decreased mainly because of the reduction of oxygen vacancies with increasing oxygen flow rate.

Original language	English
Pages (from-to)	1288-1290
Number of pages	3
Journal	Proceedings of International Meeting on Information Display
Volume	2
State	Published - 2006
Event	5th International Meeting on Information Display - Seoul, Korea, Republic of Duration: 19 Jul 2005 → 23 Jul 2005

Cite this

@article{d8576c9420c044db9df2212123057d2b,

title = "The characteristics of organic thin film transistors with high-k dielectrics",

abstract = "We report on the structural and electrical properties of amorphous Yttria-stabilized zirconia (YSZ) thin films which are the potential high-k gate dielectric material of organic thin film transistor (OTFT). To investigate the influence of t he oxygen flow rate o n the s tructural and electrical properties of the YSZ films, XRD, XPS, J-E, I-V were carried out in this work. Oxygen vacancies are expected to be the most predominant type of defect in metal-oxide dielectrics. The leakage current density decreased mainly because of the reduction of oxygen vacancies with increasing oxygen flow rate.",

author = "Kim, {Chang Su} and Kim, {Woo Jin} and Jo, {Sung Jin} and Baik, {Hong Koo}",

year = "2006",

language = "English",

volume = "2",

pages = "1288--1290",

journal = "Proceedings of International Meeting on Information Display",

issn = "1738-7558",

note = "5th International Meeting on Information Display ; Conference date: 19-07-2005 Through 23-07-2005",

}

TY - JOUR

T1 - The characteristics of organic thin film transistors with high-k dielectrics

AU - Kim, Chang Su

AU - Kim, Woo Jin

AU - Jo, Sung Jin

AU - Baik, Hong Koo

PY - 2006

Y1 - 2006

N2 - We report on the structural and electrical properties of amorphous Yttria-stabilized zirconia (YSZ) thin films which are the potential high-k gate dielectric material of organic thin film transistor (OTFT). To investigate the influence of t he oxygen flow rate o n the s tructural and electrical properties of the YSZ films, XRD, XPS, J-E, I-V were carried out in this work. Oxygen vacancies are expected to be the most predominant type of defect in metal-oxide dielectrics. The leakage current density decreased mainly because of the reduction of oxygen vacancies with increasing oxygen flow rate.

AB - We report on the structural and electrical properties of amorphous Yttria-stabilized zirconia (YSZ) thin films which are the potential high-k gate dielectric material of organic thin film transistor (OTFT). To investigate the influence of t he oxygen flow rate o n the s tructural and electrical properties of the YSZ films, XRD, XPS, J-E, I-V were carried out in this work. Oxygen vacancies are expected to be the most predominant type of defect in metal-oxide dielectrics. The leakage current density decreased mainly because of the reduction of oxygen vacancies with increasing oxygen flow rate.

UR - http://www.scopus.com/inward/record.url?scp=33847338999&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:33847338999

SN - 1738-7558

VL - 2

SP - 1288

EP - 1290

JO - Proceedings of International Meeting on Information Display

JF - Proceedings of International Meeting on Information Display

T2 - 5th International Meeting on Information Display

Y2 - 19 July 2005 through 23 July 2005

ER -

The characteristics of organic thin film transistors with high-k dielectrics

Abstract

Other files and links

Fingerprint

Cite this