The characteristics of the asymmetric-offset structure n-type polycrystalline thin-film transistors fabricated by alternating magnetic-field-enhanced rapid thermal annealing

Won Kyu Lee; Sanq Geun Park; Dong Won Kang; Byoung Seong Jeong; Joonhoo Choi; Chi Woo Kim; Min Koo Han

The characteristics of the asymmetric-offset structure n-type polycrystalline thin-film transistors fabricated by alternating magnetic-field-enhanced rapid thermal annealing

Won Kyu Lee, Sanq Geun Park, Dong Won Kang, Byoung Seong Jeong, Joonhoo Choi, Chi Woo Kim, Min Koo Han

Research output: Contribution to conference › Paper › peer-review

1 Scopus citations

Abstract

We designed and fabricated asymmetric-offset structure (AOS) top-gate n-type depletion mode polycrystalline silicon (poly-Si) thin film transistors (TFTs) which suppressed the leakage current considerably and have improved reliability significantly. The TFTs were fabricated on the glass substrates by employing alternating magnetic-field-enhanced rapid thermal annealing (AMFERTA) in order to improve the uniformity compared with widely used excimer laser annealing (ELA). The asymmetric-offset structure TFT can be made without additional doping processes or masks. These structures could greatly suppress the leakage current without sacrifice the ON current with increasing V _DS and decreasing V_GS. This device structure can be useful for achieving good image quality, high stability, and reducing the power consumption of active matrix organic light-emitting diode (AMOLED) panels.

Original language	English
Pages	663-666
Number of pages	4
State	Published - 2008
Event	15th International Display Workshops, IDW '08 - Niigata, Japan Duration: 3 Dec 2008 → 5 Dec 2008

Conference

Conference	15th International Display Workshops, IDW '08
Country/Territory	Japan
City	Niigata
Period	3/12/08 → 5/12/08

Cite this

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title = "The characteristics of the asymmetric-offset structure n-type polycrystalline thin-film transistors fabricated by alternating magnetic-field-enhanced rapid thermal annealing",

abstract = "We designed and fabricated asymmetric-offset structure (AOS) top-gate n-type depletion mode polycrystalline silicon (poly-Si) thin film transistors (TFTs) which suppressed the leakage current considerably and have improved reliability significantly. The TFTs were fabricated on the glass substrates by employing alternating magnetic-field-enhanced rapid thermal annealing (AMFERTA) in order to improve the uniformity compared with widely used excimer laser annealing (ELA). The asymmetric-offset structure TFT can be made without additional doping processes or masks. These structures could greatly suppress the leakage current without sacrifice the ON current with increasing V DS and decreasing VGS. This device structure can be useful for achieving good image quality, high stability, and reducing the power consumption of active matrix organic light-emitting diode (AMOLED) panels.",

author = "Lee, \{Won Kyu\} and Park, \{Sanq Geun\} and Kang, \{Dong Won\} and Jeong, \{Byoung Seong\} and Joonhoo Choi and Kim, \{Chi Woo\} and Han, \{Min Koo\}",

year = "2008",

language = "English",

pages = "663--666",

note = "15th International Display Workshops, IDW '08 ; Conference date: 03-12-2008 Through 05-12-2008",

}

The characteristics of the asymmetric-offset structure n-type polycrystalline thin-film transistors fabricated by alternating magnetic-field-enhanced rapid thermal annealing. / Lee, Won Kyu; Park, Sanq Geun; Kang, Dong Won et al.
2008. 663-666 Paper presented at 15th International Display Workshops, IDW '08, Niigata, Japan.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - The characteristics of the asymmetric-offset structure n-type polycrystalline thin-film transistors fabricated by alternating magnetic-field-enhanced rapid thermal annealing

AU - Lee, Won Kyu

AU - Park, Sanq Geun

AU - Kang, Dong Won

AU - Jeong, Byoung Seong

AU - Choi, Joonhoo

AU - Kim, Chi Woo

AU - Han, Min Koo

PY - 2008

Y1 - 2008

N2 - We designed and fabricated asymmetric-offset structure (AOS) top-gate n-type depletion mode polycrystalline silicon (poly-Si) thin film transistors (TFTs) which suppressed the leakage current considerably and have improved reliability significantly. The TFTs were fabricated on the glass substrates by employing alternating magnetic-field-enhanced rapid thermal annealing (AMFERTA) in order to improve the uniformity compared with widely used excimer laser annealing (ELA). The asymmetric-offset structure TFT can be made without additional doping processes or masks. These structures could greatly suppress the leakage current without sacrifice the ON current with increasing V DS and decreasing VGS. This device structure can be useful for achieving good image quality, high stability, and reducing the power consumption of active matrix organic light-emitting diode (AMOLED) panels.

AB - We designed and fabricated asymmetric-offset structure (AOS) top-gate n-type depletion mode polycrystalline silicon (poly-Si) thin film transistors (TFTs) which suppressed the leakage current considerably and have improved reliability significantly. The TFTs were fabricated on the glass substrates by employing alternating magnetic-field-enhanced rapid thermal annealing (AMFERTA) in order to improve the uniformity compared with widely used excimer laser annealing (ELA). The asymmetric-offset structure TFT can be made without additional doping processes or masks. These structures could greatly suppress the leakage current without sacrifice the ON current with increasing V DS and decreasing VGS. This device structure can be useful for achieving good image quality, high stability, and reducing the power consumption of active matrix organic light-emitting diode (AMOLED) panels.

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M3 - Paper

AN - SCOPUS:77954139678

SP - 663

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T2 - 15th International Display Workshops, IDW '08

Y2 - 3 December 2008 through 5 December 2008

ER -

The characteristics of the asymmetric-offset structure n-type polycrystalline thin-film transistors fabricated by alternating magnetic-field-enhanced rapid thermal annealing

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