The effect of a migration barrier between tungsten oxide and indium tin oxide thin films in electrochromic devices

J. S. Huh, H. R. Hwang, J. H. Paik, D. D. Lee, J. O. Lim

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

Electrochromic devices are based on the reversible insertion of guest atoms into the structure of the host solid. However, after cyclic operation, the tungsten in a WO3 film and the indium in an ITO (indium tin oxide) film were migrated with each other and the electrochromic property of the device was decreased. The trapped lithium is associated with the indium (diffuse out from ITO to WO3 film). In order to block migration, a thin tungsten barrier film was deposited on the ITO film. With the tungsten barrier, the indium and tungsten migration was effectively blocked and the decrease of the maximum current of cyclic voltammogram was reduced to 1/10. We can now manufacture electrochromic devices that have long lifetimes and high transmittance variance.

Original languageEnglish
Pages (from-to)255-259
Number of pages5
JournalThin Solid Films
Volume385
Issue number1-2
DOIs
StatePublished - 2 Apr 2001

Keywords

  • Electronic devices
  • Indium tin oxide
  • Interfaces
  • Tungsten oxide

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