The effect of electro-annealing on the electrical properties of ITO film on colorless polyimide substrate

Dong ho Lee; Shang hun Shim; Jin sik Choi; Keun byoung Yoon

doi:10.1016/j.apsusc.2008.01.078

The effect of electro-annealing on the electrical properties of ITO film on colorless polyimide substrate

Dong ho Lee
, Shang hun Shim
, Jin sik Choi
, Keun byoung Yoon

Kyungpook National University

Research output: Contribution to journal › Article › peer-review

30 Scopus citations

Abstract

The effect of different annealing methods on the sheet resistance of indium tin oxide (ITO) on polyimide (PI) substrate has been investigated. ITO thin films were prepared by RF magnetron sputtering in pure Ar gas and electro-annealing, this was carried out in the flow of an electric current at several temperatures between 100 and 180 °C in air. Electro- and thermal annealing were compared in order to confirm differences between the electrical, optical and microstructural properties of the ITO thin films. As electro-annealing induced the predominant growth of crystallites of ITO thin films along (4 0 0) plane, the sheet resistance of ITO films that were electro-annealed for 2 mA at 180 °C considerably decreased from 50 to 28 Ω/cm².

Original language	English
Pages (from-to)	4650-4654
Number of pages	5
Journal	Applied Surface Science
Volume	254
Issue number	15
DOIs	https://doi.org/10.1016/j.apsusc.2008.01.078
State	Published - 30 May 2008

Keywords

Electro-annealing
Growth of crystallites
ITO
Sheet resistance
Transmittance

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10.1016/j.apsusc.2008.01.078

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@article{bf3dc0e5dd1d4b9f88611db3ef7b81d2,

title = "The effect of electro-annealing on the electrical properties of ITO film on colorless polyimide substrate",

abstract = "The effect of different annealing methods on the sheet resistance of indium tin oxide (ITO) on polyimide (PI) substrate has been investigated. ITO thin films were prepared by RF magnetron sputtering in pure Ar gas and electro-annealing, this was carried out in the flow of an electric current at several temperatures between 100 and 180 °C in air. Electro- and thermal annealing were compared in order to confirm differences between the electrical, optical and microstructural properties of the ITO thin films. As electro-annealing induced the predominant growth of crystallites of ITO thin films along (4 0 0) plane, the sheet resistance of ITO films that were electro-annealed for 2 mA at 180 °C considerably decreased from 50 to 28 Ω/cm2.",

keywords = "Electro-annealing, Growth of crystallites, ITO, Sheet resistance, Transmittance",

author = "Lee, \{Dong ho\} and Shim, \{Shang hun\} and Choi, \{Jin sik\} and Yoon, \{Keun byoung\}",

year = "2008",

month = may,

day = "30",

doi = "10.1016/j.apsusc.2008.01.078",

language = "English",

volume = "254",

pages = "4650--4654",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier B.V.",

number = "15",

}

TY - JOUR

T1 - The effect of electro-annealing on the electrical properties of ITO film on colorless polyimide substrate

AU - Lee, Dong ho

AU - Shim, Shang hun

AU - Choi, Jin sik

AU - Yoon, Keun byoung

PY - 2008/5/30

Y1 - 2008/5/30

N2 - The effect of different annealing methods on the sheet resistance of indium tin oxide (ITO) on polyimide (PI) substrate has been investigated. ITO thin films were prepared by RF magnetron sputtering in pure Ar gas and electro-annealing, this was carried out in the flow of an electric current at several temperatures between 100 and 180 °C in air. Electro- and thermal annealing were compared in order to confirm differences between the electrical, optical and microstructural properties of the ITO thin films. As electro-annealing induced the predominant growth of crystallites of ITO thin films along (4 0 0) plane, the sheet resistance of ITO films that were electro-annealed for 2 mA at 180 °C considerably decreased from 50 to 28 Ω/cm2.

AB - The effect of different annealing methods on the sheet resistance of indium tin oxide (ITO) on polyimide (PI) substrate has been investigated. ITO thin films were prepared by RF magnetron sputtering in pure Ar gas and electro-annealing, this was carried out in the flow of an electric current at several temperatures between 100 and 180 °C in air. Electro- and thermal annealing were compared in order to confirm differences between the electrical, optical and microstructural properties of the ITO thin films. As electro-annealing induced the predominant growth of crystallites of ITO thin films along (4 0 0) plane, the sheet resistance of ITO films that were electro-annealed for 2 mA at 180 °C considerably decreased from 50 to 28 Ω/cm2.

KW - Electro-annealing

KW - Growth of crystallites

KW - ITO

KW - Sheet resistance

KW - Transmittance

UR - https://www.scopus.com/pages/publications/42749092590

U2 - 10.1016/j.apsusc.2008.01.078

DO - 10.1016/j.apsusc.2008.01.078

M3 - Article

AN - SCOPUS:42749092590

SN - 0169-4332

VL - 254

SP - 4650

EP - 4654

JO - Applied Surface Science

JF - Applied Surface Science

IS - 15

ER -

The effect of electro-annealing on the electrical properties of ITO film on colorless polyimide substrate

Abstract

Keywords

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