The Effect of Grain Boundary on Electrical Characteristics in the Source and Drain Regions of Polycrystalline Silicon Based in One Transistor Dynamic Random Access Memory

Jin-Hyuk Bae

The Effect of Grain Boundary on Electrical Characteristics in the Source and Drain Regions of Polycrystalline Silicon Based in One Transistor Dynamic Random Access Memory

School of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	4258
Journal	Journal of Nanoscience and Nanotechnology
Volume	21
State	Published - 2021

Cite this

@article{7cd7bf47a2fd48f4a1bec8221618719b,

title = "The Effect of Grain Boundary on Electrical Characteristics in the Source and Drain Regions of Polycrystalline Silicon Based in One Transistor Dynamic Random Access Memory",

author = "Jin-Hyuk Bae",

year = "2021",

language = "English",

volume = "21",

pages = "4258",

journal = "Journal of Nanoscience and Nanotechnology",

issn = "1533-4880",

publisher = "American Scientific Publishers",

}

TY - JOUR

T1 - The Effect of Grain Boundary on Electrical Characteristics in the Source and Drain Regions of Polycrystalline Silicon Based in One Transistor Dynamic Random Access Memory

AU - Bae, Jin-Hyuk

PY - 2021

Y1 - 2021

M3 - Article

SN - 1533-4880

VL - 21

SP - 4258

JO - Journal of Nanoscience and Nanotechnology

JF - Journal of Nanoscience and Nanotechnology

ER -