The Effect of Grain Boundary on Electrical Characteristics in the Source and Drain Regions of Polycrystalline Silicon Based in One Transistor Dynamic Random Access Memory

Jin-Hyuk Bae

The Effect of Grain Boundary on Electrical Characteristics in the Source and Drain Regions of Polycrystalline Silicon Based in One Transistor Dynamic Random Access Memory

Jin-Hyuk Bae

School of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	4258
Journal	Journal of Nanoscience and Nanotechnology
Volume	21
State	Published - 2021

Cite this

@article{7cd7bf47a2fd48f4a1bec8221618719b,

title = "The Effect of Grain Boundary on Electrical Characteristics in the Source and Drain Regions of Polycrystalline Silicon Based in One Transistor Dynamic Random Access Memory",

author = "Jin-Hyuk Bae",

year = "2021",

language = "English",

volume = "21",

pages = "4258",

journal = "Journal of Nanoscience and Nanotechnology",

issn = "1533-4880",

publisher = "American Scientific Publishers",

}

TY - JOUR

T1 - The Effect of Grain Boundary on Electrical Characteristics in the Source and Drain Regions of Polycrystalline Silicon Based in One Transistor Dynamic Random Access Memory

AU - Bae, Jin-Hyuk

PY - 2021

Y1 - 2021

M3 - Article

SN - 1533-4880

VL - 21

SP - 4258

JO - Journal of Nanoscience and Nanotechnology

JF - Journal of Nanoscience and Nanotechnology

ER -