Abstract
This work presents the influence of the variation of oxygen content in the ZnO films on their electrical characteristics. We applied the post-thermal annealing in N2 and air ambient to control the oxygen content of ZnO films, which improved crystallinity and optical properties of ZnO films. The oxygen concentration was measured by Auger electron spectroscopy and the electrical characteristics were obtained by Hall measurement in the van der Pauw configuration and transmission line method. As result, it was shown that the electron concentration varies from 1016 to 1021/cm 3 while the resistivity from 10-3 to tens ohm-cm with respect to Zn/O concentration ratio.
| Original language | English |
|---|---|
| Pages (from-to) | 1553-1559 |
| Number of pages | 7 |
| Journal | Physica Status Solidi (B): Basic Research |
| Volume | 244 |
| Issue number | 5 |
| DOIs | |
| State | Published - May 2007 |