The effect of oxygen content on the electrical characteristics of ZnO

E. S. Jung, H. S. Kim, B. H. Kong, H. K. Cho, N. K. Park, H. S. Lee

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

This work presents the influence of the variation of oxygen content in the ZnO films on their electrical characteristics. We applied the post-thermal annealing in N2 and air ambient to control the oxygen content of ZnO films, which improved crystallinity and optical properties of ZnO films. The oxygen concentration was measured by Auger electron spectroscopy and the electrical characteristics were obtained by Hall measurement in the van der Pauw configuration and transmission line method. As result, it was shown that the electron concentration varies from 1016 to 1021/cm 3 while the resistivity from 10-3 to tens ohm-cm with respect to Zn/O concentration ratio.

Original languageEnglish
Pages (from-to)1553-1559
Number of pages7
JournalPhysica Status Solidi (B): Basic Research
Volume244
Issue number5
DOIs
StatePublished - May 2007

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