The fabrication scheme of a high resolution and high aspect ratio UV-nanoimprint mold

Kipil Lim; Jung Sub Wi; Sung Wook Nam; Soo Yeon Park; Jae Jong Lee; Ki Bum Kim

doi:10.1088/0957-4484/20/49/495303

The fabrication scheme of a high resolution and high aspect ratio UV-nanoimprint mold

Kipil Lim, Jung Sub Wi, Sung Wook Nam, Soo Yeon Park, Jae Jong Lee, Ki Bum Kim

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

We propose a new scheme of fabricating molds for UV-nanoimprint lithography (UV-NIL) that is both high resolution and has a high aspect ratio. The scheme involves the utilization of a hydrogen silsesquioxane (HSQ) electron beam resist for high resolution patterning and the sputter-deposited α-Si layer that defines the high-aspect-ratio mold pattern obtained from the high etch selectivity between the HSQ and the α-Si. We obtained high resolution line patterns and dot patterns with feature sizes of 40nm and 25nm, respectively. The aspect ratio of the patterns was about 3.5 for line patterns and about 5 for dot patterns. These molds also demonstrate successful UV-nanoimprint patterning.

Original language	English
Article number	495303
Journal	Nanotechnology
Volume	20
Issue number	49
DOIs	https://doi.org/10.1088/0957-4484/20/49/495303
State	Published - 2009

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title = "The fabrication scheme of a high resolution and high aspect ratio UV-nanoimprint mold",

abstract = "We propose a new scheme of fabricating molds for UV-nanoimprint lithography (UV-NIL) that is both high resolution and has a high aspect ratio. The scheme involves the utilization of a hydrogen silsesquioxane (HSQ) electron beam resist for high resolution patterning and the sputter-deposited α-Si layer that defines the high-aspect-ratio mold pattern obtained from the high etch selectivity between the HSQ and the α-Si. We obtained high resolution line patterns and dot patterns with feature sizes of 40nm and 25nm, respectively. The aspect ratio of the patterns was about 3.5 for line patterns and about 5 for dot patterns. These molds also demonstrate successful UV-nanoimprint patterning.",

author = "Kipil Lim and Wi, \{Jung Sub\} and Nam, \{Sung Wook\} and Park, \{Soo Yeon\} and Lee, \{Jae Jong\} and Kim, \{Ki Bum\}",

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T1 - The fabrication scheme of a high resolution and high aspect ratio UV-nanoimprint mold

AU - Lim, Kipil

AU - Wi, Jung Sub

AU - Nam, Sung Wook

AU - Park, Soo Yeon

AU - Lee, Jae Jong

AU - Kim, Ki Bum

PY - 2009

Y1 - 2009

N2 - We propose a new scheme of fabricating molds for UV-nanoimprint lithography (UV-NIL) that is both high resolution and has a high aspect ratio. The scheme involves the utilization of a hydrogen silsesquioxane (HSQ) electron beam resist for high resolution patterning and the sputter-deposited α-Si layer that defines the high-aspect-ratio mold pattern obtained from the high etch selectivity between the HSQ and the α-Si. We obtained high resolution line patterns and dot patterns with feature sizes of 40nm and 25nm, respectively. The aspect ratio of the patterns was about 3.5 for line patterns and about 5 for dot patterns. These molds also demonstrate successful UV-nanoimprint patterning.

AB - We propose a new scheme of fabricating molds for UV-nanoimprint lithography (UV-NIL) that is both high resolution and has a high aspect ratio. The scheme involves the utilization of a hydrogen silsesquioxane (HSQ) electron beam resist for high resolution patterning and the sputter-deposited α-Si layer that defines the high-aspect-ratio mold pattern obtained from the high etch selectivity between the HSQ and the α-Si. We obtained high resolution line patterns and dot patterns with feature sizes of 40nm and 25nm, respectively. The aspect ratio of the patterns was about 3.5 for line patterns and about 5 for dot patterns. These molds also demonstrate successful UV-nanoimprint patterning.

UR - https://www.scopus.com/pages/publications/70449776163

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SN - 0957-4484

VL - 20

JO - Nanotechnology

JF - Nanotechnology

IS - 49

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ER -

The fabrication scheme of a high resolution and high aspect ratio UV-nanoimprint mold

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