The influence of interfacial defect-region on the thermoelectric properties of nanodiamond-dispersed Bi                         2                         Te                         2.7                         Se                         0.3                          matrix composites

Tae Sik Min; Kyung Tae Kim; Injoon Son

doi:10.1016/j.apsusc.2016.11.054

The influence of interfacial defect-region on the thermoelectric properties of nanodiamond-dispersed Bi ₂ Te _2.7 Se _0.3 matrix composites

Tae Sik Min, Kyung Tae Kim, Injoon Son

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

Nanodiamond-dispersed Bi ₂ Te _2.7 Se _0.3 (ND/BTSe) matrix composites were fabricated by a high energy ball milling followed by spark plasma sintering process. The fabricated ND/BTSe composites show that ND powders with 5 nm in size are dispersed in the BTSe matrix grain rather than agglomerated at the grain boundary. It was found that atomically disordered-lattice structure present nearby the newly formed ND/BTSe interfaces. This interfacial region artificially formed by addition of ND powders plays a role as atomic-scaled defects increasing electron concentration. Electric conductivities of all the ND/BTSe composites show significantly increased values compared to that of pure BTSe in the temperature range from 298 K to 473 K. However, total thermal conductivity of the composites exhibit higher values than the BTSe due to superior electric conductivity even though active lattice phonon scattering at the interfaces affect lowering thermal conductivity. The maximum ZT, 0.97 was obtained from 0.5vol%ND/BTSe composite at 473 K and enhancement in ZT values was clearly revealed above 348 K. Therefore, these results elucidate that addition of ND powders into n-type BTSe matrix is promising method to improve thermoelectric performances.

Original language	English
Pages (from-to)	109-113
Number of pages	5
Journal	Applied Surface Science
Volume	415
DOIs	https://doi.org/10.1016/j.apsusc.2016.11.054
State	Published - 1 Sep 2017

Keywords

Bi Te Se
Interface
Nanodiamond
Thermoelectric properties

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10.1016/j.apsusc.2016.11.054

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Min, T. S., Kim, K. T., & Son, I. (2017). The influence of interfacial defect-region on the thermoelectric properties of nanodiamond-dispersed Bi ₂ Te _2.7 Se _0.3 matrix composites Applied Surface Science, 415, 109-113. https://doi.org/10.1016/j.apsusc.2016.11.054

Min, Tae Sik ; Kim, Kyung Tae ; Son, Injoon. / The influence of interfacial defect-region on the thermoelectric properties of nanodiamond-dispersed Bi ₂ Te _2.7 Se _0.3 matrix composites In: Applied Surface Science. 2017 ; Vol. 415. pp. 109-113.

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title = " The influence of interfacial defect-region on the thermoelectric properties of nanodiamond-dispersed Bi 2 Te 2.7 Se 0.3 matrix composites ",

abstract = " Nanodiamond-dispersed Bi 2 Te 2.7 Se 0.3 (ND/BTSe) matrix composites were fabricated by a high energy ball milling followed by spark plasma sintering process. The fabricated ND/BTSe composites show that ND powders with 5 nm in size are dispersed in the BTSe matrix grain rather than agglomerated at the grain boundary. It was found that atomically disordered-lattice structure present nearby the newly formed ND/BTSe interfaces. This interfacial region artificially formed by addition of ND powders plays a role as atomic-scaled defects increasing electron concentration. Electric conductivities of all the ND/BTSe composites show significantly increased values compared to that of pure BTSe in the temperature range from 298 K to 473 K. However, total thermal conductivity of the composites exhibit higher values than the BTSe due to superior electric conductivity even though active lattice phonon scattering at the interfaces affect lowering thermal conductivity. The maximum ZT, 0.97 was obtained from 0.5vol%ND/BTSe composite at 473 K and enhancement in ZT values was clearly revealed above 348 K. Therefore, these results elucidate that addition of ND powders into n-type BTSe matrix is promising method to improve thermoelectric performances.",

keywords = "Bi Te Se, Interface, Nanodiamond, Thermoelectric properties",

author = "Min, {Tae Sik} and Kim, {Kyung Tae} and Injoon Son",

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Min, TS, Kim, KT & Son, I 2017, ' The influence of interfacial defect-region on the thermoelectric properties of nanodiamond-dispersed Bi ₂ Te _2.7 Se _0.3 matrix composites ', Applied Surface Science, vol. 415, pp. 109-113. https://doi.org/10.1016/j.apsusc.2016.11.054

The influence of interfacial defect-region on the thermoelectric properties of nanodiamond-dispersed Bi ₂ Te _2.7 Se _0.3 matrix composites . / Min, Tae Sik; Kim, Kyung Tae; Son, Injoon.
In: Applied Surface Science, Vol. 415, 01.09.2017, p. 109-113.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - The influence of interfacial defect-region on the thermoelectric properties of nanodiamond-dispersed Bi 2 Te 2.7 Se 0.3 matrix composites

AU - Min, Tae Sik

AU - Kim, Kyung Tae

AU - Son, Injoon

PY - 2017/9/1

Y1 - 2017/9/1

N2 - Nanodiamond-dispersed Bi 2 Te 2.7 Se 0.3 (ND/BTSe) matrix composites were fabricated by a high energy ball milling followed by spark plasma sintering process. The fabricated ND/BTSe composites show that ND powders with 5 nm in size are dispersed in the BTSe matrix grain rather than agglomerated at the grain boundary. It was found that atomically disordered-lattice structure present nearby the newly formed ND/BTSe interfaces. This interfacial region artificially formed by addition of ND powders plays a role as atomic-scaled defects increasing electron concentration. Electric conductivities of all the ND/BTSe composites show significantly increased values compared to that of pure BTSe in the temperature range from 298 K to 473 K. However, total thermal conductivity of the composites exhibit higher values than the BTSe due to superior electric conductivity even though active lattice phonon scattering at the interfaces affect lowering thermal conductivity. The maximum ZT, 0.97 was obtained from 0.5vol%ND/BTSe composite at 473 K and enhancement in ZT values was clearly revealed above 348 K. Therefore, these results elucidate that addition of ND powders into n-type BTSe matrix is promising method to improve thermoelectric performances.

AB - Nanodiamond-dispersed Bi 2 Te 2.7 Se 0.3 (ND/BTSe) matrix composites were fabricated by a high energy ball milling followed by spark plasma sintering process. The fabricated ND/BTSe composites show that ND powders with 5 nm in size are dispersed in the BTSe matrix grain rather than agglomerated at the grain boundary. It was found that atomically disordered-lattice structure present nearby the newly formed ND/BTSe interfaces. This interfacial region artificially formed by addition of ND powders plays a role as atomic-scaled defects increasing electron concentration. Electric conductivities of all the ND/BTSe composites show significantly increased values compared to that of pure BTSe in the temperature range from 298 K to 473 K. However, total thermal conductivity of the composites exhibit higher values than the BTSe due to superior electric conductivity even though active lattice phonon scattering at the interfaces affect lowering thermal conductivity. The maximum ZT, 0.97 was obtained from 0.5vol%ND/BTSe composite at 473 K and enhancement in ZT values was clearly revealed above 348 K. Therefore, these results elucidate that addition of ND powders into n-type BTSe matrix is promising method to improve thermoelectric performances.

KW - Bi Te Se

KW - Interface

KW - Nanodiamond

KW - Thermoelectric properties

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JO - Applied Surface Science

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Min TS, Kim KT, Son I. The influence of interfacial defect-region on the thermoelectric properties of nanodiamond-dispersed Bi ₂ Te _2.7 Se _0.3 matrix composites Applied Surface Science. 2017 Sep 1;415:109-113. doi: 10.1016/j.apsusc.2016.11.054

The influence of interfacial defect-region on the thermoelectric properties of nanodiamond-dispersed Bi ₂ Te _2.7 Se _0.3 matrix composites

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