The initial mechanisms of Al2O3 atomic layer deposition on OH/Si(1 0 0)-2 × 1 surface by tri-methylaluminum and water

Manik Kumer Ghosh; Cheol Ho Choi

doi:10.1016/j.cplett.2006.05.126

The initial mechanisms of Al₂O₃ atomic layer deposition on OH/Si(1 0 0)-2 × 1 surface by tri-methylaluminum and water

Manik Kumer Ghosh, Cheol Ho Choi

Kyungpook National University

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

The initial growth mechanism of Al₂O₃ using trimethylaluminum and water precursors on OH/Si(1 0 0)-2 × 1 surface were theoretically explored with SIMOMM:MP2/6-31G(d) in order to elucidate unique characteristics of OH/Si(1 0 0) surface as compared to H/Si(1 0 0). The additional surface -OH group significantly increases the thermodynamic stabilities of initial complexes and subsequent products, and it reduces the reaction barriers of the initial deposition of TMA. It also allows the ring closing reaction essentially saturating surface bonding sites in between surface and Al₂O₃ junction region.

Original language	English
Pages (from-to)	365-369
Number of pages	5
Journal	Chemical Physics Letters
Volume	426
Issue number	4-6
DOIs	https://doi.org/10.1016/j.cplett.2006.05.126
State	Published - 4 Aug 2006

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title = "The initial mechanisms of Al2O3 atomic layer deposition on OH/Si(1 0 0)-2 × 1 surface by tri-methylaluminum and water",

abstract = "The initial growth mechanism of Al2O3 using trimethylaluminum and water precursors on OH/Si(1 0 0)-2 × 1 surface were theoretically explored with SIMOMM:MP2/6-31G(d) in order to elucidate unique characteristics of OH/Si(1 0 0) surface as compared to H/Si(1 0 0). The additional surface -OH group significantly increases the thermodynamic stabilities of initial complexes and subsequent products, and it reduces the reaction barriers of the initial deposition of TMA. It also allows the ring closing reaction essentially saturating surface bonding sites in between surface and Al2O3 junction region.",

author = "Ghosh, {Manik Kumer} and Choi, {Cheol Ho}",

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doi = "10.1016/j.cplett.2006.05.126",

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AU - Ghosh, Manik Kumer

AU - Choi, Cheol Ho

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Y1 - 2006/8/4

N2 - The initial growth mechanism of Al2O3 using trimethylaluminum and water precursors on OH/Si(1 0 0)-2 × 1 surface were theoretically explored with SIMOMM:MP2/6-31G(d) in order to elucidate unique characteristics of OH/Si(1 0 0) surface as compared to H/Si(1 0 0). The additional surface -OH group significantly increases the thermodynamic stabilities of initial complexes and subsequent products, and it reduces the reaction barriers of the initial deposition of TMA. It also allows the ring closing reaction essentially saturating surface bonding sites in between surface and Al2O3 junction region.

AB - The initial growth mechanism of Al2O3 using trimethylaluminum and water precursors on OH/Si(1 0 0)-2 × 1 surface were theoretically explored with SIMOMM:MP2/6-31G(d) in order to elucidate unique characteristics of OH/Si(1 0 0) surface as compared to H/Si(1 0 0). The additional surface -OH group significantly increases the thermodynamic stabilities of initial complexes and subsequent products, and it reduces the reaction barriers of the initial deposition of TMA. It also allows the ring closing reaction essentially saturating surface bonding sites in between surface and Al2O3 junction region.

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DO - 10.1016/j.cplett.2006.05.126

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VL - 426

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JO - Chemical Physics Letters

JF - Chemical Physics Letters

IS - 4-6

ER -

The initial mechanisms of Al₂O₃ atomic layer deposition on OH/Si(1 0 0)-2 × 1 surface by tri-methylaluminum and water

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