The polarization field dependence of Ti/Al based Ohmic contacts on N-type semipolar GaN

Roy B. Chung; Hung Tse Chen; Chih Chien Pan; Jun Seok Ha; Steven P. Denbaars; Shuji Nakamura

doi:10.1063/1.3690878

The polarization field dependence of Ti/Al based Ohmic contacts on N-type semipolar GaN

Roy B. Chung, Hung Tse Chen, Chih Chien Pan, Jun Seok Ha, Steven P. Denbaars, Shuji Nakamura

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

We report on the polarization field dependence of the Ti/Al based n-type contacts on various polar and semipolar GaN planes. The contact resistance of the metal contacts on N-face GaN could be lowered by photoelectrochemical (PEC) etching, which formed a pyramidal feature on the surface with {101̄1̄} facets. The contact resistance on the semipolar (101̄1̄ ) surface was 6.3 10 ^-5 π cm ², showing even lower contact resistance than the PEC etched N-face when annealed at 450 C. Among few semipolar planes, (101̄1̄ ), (112̄2̄ ), and (112̄2̄), the contact resistance was the lowest with (112̄2̄) plane, which is the plane with the stronger polarization field than (101̄1̄ ) and more Ga rich surface than (112̄2̄) plane.

Original language	English
Article number	091104
Journal	Applied Physics Letters
Volume	100
Issue number	9
DOIs	https://doi.org/10.1063/1.3690878
State	Published - 27 Feb 2012

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@article{90600a8fabe047138dd1efa53e6d9395,

title = "The polarization field dependence of Ti/Al based Ohmic contacts on N-type semipolar GaN",

abstract = "We report on the polarization field dependence of the Ti/Al based n-type contacts on various polar and semipolar GaN planes. The contact resistance of the metal contacts on N-face GaN could be lowered by photoelectrochemical (PEC) etching, which formed a pyramidal feature on the surface with {10{\=1}{\=1}} facets. The contact resistance on the semipolar (10{\=1}{\=1} ) surface was 6.3 10 -5 π cm 2, showing even lower contact resistance than the PEC etched N-face when annealed at 450 C. Among few semipolar planes, (10{\=1}{\=1} ), (11{\=2}{\=2} ), and (11{\=2}{\=2}), the contact resistance was the lowest with (11{\=2}{\=2}) plane, which is the plane with the stronger polarization field than (10{\=1}{\=1} ) and more Ga rich surface than (11{\=2}{\=2}) plane.",

author = "Chung, {Roy B.} and Chen, {Hung Tse} and Pan, {Chih Chien} and Ha, {Jun Seok} and Denbaars, {Steven P.} and Shuji Nakamura",

year = "2012",

month = feb,

day = "27",

doi = "10.1063/1.3690878",

language = "English",

volume = "100",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "9",

}

TY - JOUR

T1 - The polarization field dependence of Ti/Al based Ohmic contacts on N-type semipolar GaN

AU - Chung, Roy B.

AU - Chen, Hung Tse

AU - Pan, Chih Chien

AU - Ha, Jun Seok

AU - Denbaars, Steven P.

AU - Nakamura, Shuji

PY - 2012/2/27

Y1 - 2012/2/27

N2 - We report on the polarization field dependence of the Ti/Al based n-type contacts on various polar and semipolar GaN planes. The contact resistance of the metal contacts on N-face GaN could be lowered by photoelectrochemical (PEC) etching, which formed a pyramidal feature on the surface with {101̄1̄} facets. The contact resistance on the semipolar (101̄1̄ ) surface was 6.3 10 -5 π cm 2, showing even lower contact resistance than the PEC etched N-face when annealed at 450 C. Among few semipolar planes, (101̄1̄ ), (112̄2̄ ), and (112̄2̄), the contact resistance was the lowest with (112̄2̄) plane, which is the plane with the stronger polarization field than (101̄1̄ ) and more Ga rich surface than (112̄2̄) plane.

AB - We report on the polarization field dependence of the Ti/Al based n-type contacts on various polar and semipolar GaN planes. The contact resistance of the metal contacts on N-face GaN could be lowered by photoelectrochemical (PEC) etching, which formed a pyramidal feature on the surface with {101̄1̄} facets. The contact resistance on the semipolar (101̄1̄ ) surface was 6.3 10 -5 π cm 2, showing even lower contact resistance than the PEC etched N-face when annealed at 450 C. Among few semipolar planes, (101̄1̄ ), (112̄2̄ ), and (112̄2̄), the contact resistance was the lowest with (112̄2̄) plane, which is the plane with the stronger polarization field than (101̄1̄ ) and more Ga rich surface than (112̄2̄) plane.

UR - http://www.scopus.com/inward/record.url?scp=84863268278&partnerID=8YFLogxK

U2 - 10.1063/1.3690878

DO - 10.1063/1.3690878

M3 - Article

AN - SCOPUS:84863268278

SN - 0003-6951

VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

M1 - 091104

ER -

The polarization field dependence of Ti/Al based Ohmic contacts on N-type semipolar GaN

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