The post annealing effects on ferroelectric properties of SrBi2Ta2O9 thin films prepared by r.f. magnetron sputtering

S. S. Park

doi:10.1080/10584580108222301

The post annealing effects on ferroelectric properties of SrBi₂Ta₂O₉ thin films prepared by r.f. magnetron sputtering

Research output: Contribution to journal › Conference article › peer-review

Abstract

SrBi₂Ta₂O₉(SBT) films were prepared on Pt/Ti/SiO₂/Si substrates by conventional r.f. magnetron sputtering. The ferroelectric and dielectric properties of bismuth layer structured ferroelectrics are studied for the purpose of examining the effects of oxygen flow rate during annealing. Oxygen flow rate influenced the shape of hysteresis loop, polarization value and current voltage characteristics. The remanent polarization(2P_r) and the coercive field(2E_c) obtained from a 240 nm thick SBT films annealed at 760Torr were 4.4μC/cm² and 72kV/cm at an applied voltage of 5 V, respectively. The films annealed at oxygen flowing condition showed leakage current density of ∼10^-7 A/cm² at 150kV/cm. The films showed fatigue-free characteristics independent of annealing condition up to 10¹¹ cycles under 5 V bipolar square pulse.

Original language	English
Pages (from-to)	199-208
Number of pages	10
Journal	Integrated Ferroelectrics
Volume	33
Issue number	1-4
DOIs	https://doi.org/10.1080/10584580108222301
State	Published - 2001
Event	12th International Symposium on Integrated Ferroelectrics - Aachen, Germany Duration: 12 Mar 2000 → 15 Mar 2000

Keywords

Annealing
r.f. magnetron sputtering
SrBiTaO

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10.1080/10584580108222301

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title = "The post annealing effects on ferroelectric properties of SrBi2Ta2O9 thin films prepared by r.f. magnetron sputtering",

abstract = "SrBi2Ta2O9(SBT) films were prepared on Pt/Ti/SiO2/Si substrates by conventional r.f. magnetron sputtering. The ferroelectric and dielectric properties of bismuth layer structured ferroelectrics are studied for the purpose of examining the effects of oxygen flow rate during annealing. Oxygen flow rate influenced the shape of hysteresis loop, polarization value and current voltage characteristics. The remanent polarization(2Pr) and the coercive field(2Ec) obtained from a 240 nm thick SBT films annealed at 760Torr were 4.4μC/cm2 and 72kV/cm at an applied voltage of 5 V, respectively. The films annealed at oxygen flowing condition showed leakage current density of ∼10-7 A/cm2 at 150kV/cm. The films showed fatigue-free characteristics independent of annealing condition up to 1011 cycles under 5 V bipolar square pulse.",

keywords = "Annealing, r.f. magnetron sputtering, SrBiTaO",

author = "Park, {S. S.}",

year = "2001",

doi = "10.1080/10584580108222301",

language = "English",

volume = "33",

pages = "199--208",

journal = "Integrated Ferroelectrics",

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number = "1-4",

note = "12th International Symposium on Integrated Ferroelectrics ; Conference date: 12-03-2000 Through 15-03-2000",

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T1 - The post annealing effects on ferroelectric properties of SrBi2Ta2O9 thin films prepared by r.f. magnetron sputtering

AU - Park, S. S.

PY - 2001

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N2 - SrBi2Ta2O9(SBT) films were prepared on Pt/Ti/SiO2/Si substrates by conventional r.f. magnetron sputtering. The ferroelectric and dielectric properties of bismuth layer structured ferroelectrics are studied for the purpose of examining the effects of oxygen flow rate during annealing. Oxygen flow rate influenced the shape of hysteresis loop, polarization value and current voltage characteristics. The remanent polarization(2Pr) and the coercive field(2Ec) obtained from a 240 nm thick SBT films annealed at 760Torr were 4.4μC/cm2 and 72kV/cm at an applied voltage of 5 V, respectively. The films annealed at oxygen flowing condition showed leakage current density of ∼10-7 A/cm2 at 150kV/cm. The films showed fatigue-free characteristics independent of annealing condition up to 1011 cycles under 5 V bipolar square pulse.

AB - SrBi2Ta2O9(SBT) films were prepared on Pt/Ti/SiO2/Si substrates by conventional r.f. magnetron sputtering. The ferroelectric and dielectric properties of bismuth layer structured ferroelectrics are studied for the purpose of examining the effects of oxygen flow rate during annealing. Oxygen flow rate influenced the shape of hysteresis loop, polarization value and current voltage characteristics. The remanent polarization(2Pr) and the coercive field(2Ec) obtained from a 240 nm thick SBT films annealed at 760Torr were 4.4μC/cm2 and 72kV/cm at an applied voltage of 5 V, respectively. The films annealed at oxygen flowing condition showed leakage current density of ∼10-7 A/cm2 at 150kV/cm. The films showed fatigue-free characteristics independent of annealing condition up to 1011 cycles under 5 V bipolar square pulse.

KW - Annealing

KW - r.f. magnetron sputtering

KW - SrBiTaO

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U2 - 10.1080/10584580108222301

DO - 10.1080/10584580108222301

M3 - Conference article

AN - SCOPUS:0035030578

SN - 1058-4587

VL - 33

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EP - 208

JO - Integrated Ferroelectrics

JF - Integrated Ferroelectrics

IS - 1-4

T2 - 12th International Symposium on Integrated Ferroelectrics

Y2 - 12 March 2000 through 15 March 2000

ER -

The post annealing effects on ferroelectric properties of SrBi₂Ta₂O₉ thin films prepared by r.f. magnetron sputtering

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Keywords

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