The prospects for 10 nm III-V CMOS

J. A. Del Alamo, D. H. Kim

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

5 Scopus citations

Abstract

The increasing difficulties for further scaling down of Si CMOS is bringing to the fore the investigation of alternative channel materials. Among these, III-V compound semiconductors are very attractive due to their outstanding electron transport properties. This paper briefly reviews the prospects and the challenges for a III-V CMOS technology with gate lengths in the 10 nm range.

Original languageEnglish
Title of host publicationProceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010
Pages166-167
Number of pages2
DOIs
StatePublished - 2010
Event2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010 - Hsin Chu, Taiwan, Province of China
Duration: 26 Apr 201028 Apr 2010

Publication series

NameProceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010

Conference

Conference2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010
Country/TerritoryTaiwan, Province of China
CityHsin Chu
Period26/04/1028/04/10

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