@inproceedings{5feff52a292f48b2bb090dc8aa6146b9,
title = "The prospects for 10 nm III-V CMOS",
abstract = "The increasing difficulties for further scaling down of Si CMOS is bringing to the fore the investigation of alternative channel materials. Among these, III-V compound semiconductors are very attractive due to their outstanding electron transport properties. This paper briefly reviews the prospects and the challenges for a III-V CMOS technology with gate lengths in the 10 nm range.",
author = "{Del Alamo}, {J. A.} and Kim, {D. H.}",
year = "2010",
doi = "10.1109/VTSA.2010.5488901",
language = "English",
isbn = "9781424450633",
series = "Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010",
pages = "166--167",
booktitle = "Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010",
note = "2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010 ; Conference date: 26-04-2010 Through 28-04-2010",
}