The simulation and analysis of recess-gated GaN/AlGaN MOSFET RF characteristics for green-energy automobile applications

Jae Hwa Seo; Young Jun Yoon; Hwan Gi Lee; Gwan Min Yoo; Young Jae Kim; Sung Yoon Kim; Sung Yun Woo; Hee Bum Roh; Hye Rim Eun; Hye Su Kang; Seongjae Cho; Jung Hee Lee; In Man Kang

doi:10.1109/ICMTMA.2014.187

The simulation and analysis of recess-gated GaN/AlGaN MOSFET RF characteristics for green-energy automobile applications

Jae Hwa Seo
, Young Jun Yoon
, Hwan Gi Lee
, Gwan Min Yoo
, Young Jae Kim
, Sung Yoon Kim
, Sung Yun Woo
, Hee Bum Roh
, Hye Rim Eun
, Hye Su Kang
, Seongjae Cho
, Jung Hee Lee
, In Man Kang

School of Electronics Engineering

Research output: Contribution to conference › Paper › peer-review

Abstract

A normally-off recess-gated GaN/AlGaN MOSFET which applicable at green-energy system and automobile SoC technology has been demonstrated. By recess-gated process, the transistor is operated as a normally-off device which has advantages for less power loss, and easy circuit design. After the GaN/AlGaN MOSFET device design, the DC and RF characteristics are extracted and analyzed by TCAD simulation process. The I_on of 250 mA/mm, SS of 200 mV/dec, V_B of 60 V, f_T of 2 GHz, and f_max of 2.5 GHz are obtained.

Original language	English
Pages	762-765
Number of pages	4
DOIs	https://doi.org/10.1109/ICMTMA.2014.187
State	Published - 2014
Event	2014 6th International Conference on Measuring Technology and Mechatronics Automation, ICMTMA 2014 - Zhangjiajie, Hunan, China Duration: 10 Jan 2014 → 11 Jan 2014

Conference

Conference	2014 6th International Conference on Measuring Technology and Mechatronics Automation, ICMTMA 2014
Country/Territory	China
City	Zhangjiajie, Hunan
Period	10/01/14 → 11/01/14

Keywords

Automobile application
GaN/AlGaN
Green energy
MOSFET
silicon substrate
TCAD simulation

Access to Document

10.1109/ICMTMA.2014.187

Cite this

Seo, J. H., Yoon, Y. J., Lee, H. G., Yoo, G. M., Kim, Y. J., Kim, S. Y., Woo, S. Y., Roh, H. B., Eun, H. R., Kang, H. S., Cho, S., Lee, J. H., & Kang, I. M. (2014). The simulation and analysis of recess-gated GaN/AlGaN MOSFET RF characteristics for green-energy automobile applications. 762-765. Paper presented at 2014 6th International Conference on Measuring Technology and Mechatronics Automation, ICMTMA 2014, Zhangjiajie, Hunan, China. https://doi.org/10.1109/ICMTMA.2014.187

@conference{cff33de1e5f34c4598c802fa29de5cbb,

title = "The simulation and analysis of recess-gated GaN/AlGaN MOSFET RF characteristics for green-energy automobile applications",

abstract = "A normally-off recess-gated GaN/AlGaN MOSFET which applicable at green-energy system and automobile SoC technology has been demonstrated. By recess-gated process, the transistor is operated as a normally-off device which has advantages for less power loss, and easy circuit design. After the GaN/AlGaN MOSFET device design, the DC and RF characteristics are extracted and analyzed by TCAD simulation process. The Ion of 250 mA/mm, SS of 200 mV/dec, VB of 60 V, fT of 2 GHz, and fmax of 2.5 GHz are obtained.",

keywords = "Automobile application, GaN/AlGaN, Green energy, MOSFET, silicon substrate, TCAD simulation",

author = "Seo, \{Jae Hwa\} and Yoon, \{Young Jun\} and Lee, \{Hwan Gi\} and Yoo, \{Gwan Min\} and Kim, \{Young Jae\} and Kim, \{Sung Yoon\} and Woo, \{Sung Yun\} and Roh, \{Hee Bum\} and Eun, \{Hye Rim\} and Kang, \{Hye Su\} and Seongjae Cho and Lee, \{Jung Hee\} and Kang, \{In Man\}",

year = "2014",

doi = "10.1109/ICMTMA.2014.187",

language = "English",

pages = "762--765",

note = "2014 6th International Conference on Measuring Technology and Mechatronics Automation, ICMTMA 2014 ; Conference date: 10-01-2014 Through 11-01-2014",

}

Seo, JH, Yoon, YJ, Lee, HG, Yoo, GM, Kim, YJ, Kim, SY, Woo, SY, Roh, HB, Eun, HR, Kang, HS, Cho, S, Lee, JH & Kang, IM 2014, 'The simulation and analysis of recess-gated GaN/AlGaN MOSFET RF characteristics for green-energy automobile applications', Paper presented at 2014 6th International Conference on Measuring Technology and Mechatronics Automation, ICMTMA 2014, Zhangjiajie, Hunan, China, 10/01/14 - 11/01/14 pp. 762-765. https://doi.org/10.1109/ICMTMA.2014.187

The simulation and analysis of recess-gated GaN/AlGaN MOSFET RF characteristics for green-energy automobile applications. / Seo, Jae Hwa; Yoon, Young Jun; Lee, Hwan Gi et al.
2014. 762-765 Paper presented at 2014 6th International Conference on Measuring Technology and Mechatronics Automation, ICMTMA 2014, Zhangjiajie, Hunan, China.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - The simulation and analysis of recess-gated GaN/AlGaN MOSFET RF characteristics for green-energy automobile applications

AU - Seo, Jae Hwa

AU - Yoon, Young Jun

AU - Lee, Hwan Gi

AU - Yoo, Gwan Min

AU - Kim, Young Jae

AU - Kim, Sung Yoon

AU - Woo, Sung Yun

AU - Roh, Hee Bum

AU - Eun, Hye Rim

AU - Kang, Hye Su

AU - Cho, Seongjae

AU - Lee, Jung Hee

AU - Kang, In Man

PY - 2014

Y1 - 2014

N2 - A normally-off recess-gated GaN/AlGaN MOSFET which applicable at green-energy system and automobile SoC technology has been demonstrated. By recess-gated process, the transistor is operated as a normally-off device which has advantages for less power loss, and easy circuit design. After the GaN/AlGaN MOSFET device design, the DC and RF characteristics are extracted and analyzed by TCAD simulation process. The Ion of 250 mA/mm, SS of 200 mV/dec, VB of 60 V, fT of 2 GHz, and fmax of 2.5 GHz are obtained.

AB - A normally-off recess-gated GaN/AlGaN MOSFET which applicable at green-energy system and automobile SoC technology has been demonstrated. By recess-gated process, the transistor is operated as a normally-off device which has advantages for less power loss, and easy circuit design. After the GaN/AlGaN MOSFET device design, the DC and RF characteristics are extracted and analyzed by TCAD simulation process. The Ion of 250 mA/mm, SS of 200 mV/dec, VB of 60 V, fT of 2 GHz, and fmax of 2.5 GHz are obtained.

KW - Automobile application

KW - GaN/AlGaN

KW - Green energy

KW - MOSFET

KW - silicon substrate

KW - TCAD simulation

UR - https://www.scopus.com/pages/publications/84900393646

U2 - 10.1109/ICMTMA.2014.187

DO - 10.1109/ICMTMA.2014.187

M3 - Paper

AN - SCOPUS:84900393646

SP - 762

EP - 765

T2 - 2014 6th International Conference on Measuring Technology and Mechatronics Automation, ICMTMA 2014

Y2 - 10 January 2014 through 11 January 2014

ER -

The simulation and analysis of recess-gated GaN/AlGaN MOSFET RF characteristics for green-energy automobile applications

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Keywords

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