The Variation of Schottky Barrier Height Induced by the Phase Separation of InAlAs Layers on InP HEMT Devices
- Sang Tae Lee
- , Minwoo Kong
- , Hyunchul Jang
- , Chang Hun Song
- , Shinkeun Kim
- , Do Young Yun
- , Hyeon Seok Jeong
- , Dae Hyun Kim
- , Chan Soo Shin
- , Kwang Seok Seo
- Korea Advance Nano Fab Center
- Samsung
- Seoul National University
- Yonsei University
- Kyungpook National University
Research output: Contribution to journal › Article › peer-review
4
Scopus
citations