Thermal annealing effect on the crack development and the stability of 6,13-bis(triisopropylsilylethynyl)-pentacene field-effect transistors with a solution-processed polymer insulator

Jin Hyuk Bae; Jaehoon Park; Chang Min Keum; Won Ho Kim; Min Hoi Kim; Seul Ong Kim; Soon Ki Kwon; Sin Doo Lee

doi:10.1016/j.orgel.2010.01.019

Thermal annealing effect on the crack development and the stability of 6,13-bis(triisopropylsilylethynyl)-pentacene field-effect transistors with a solution-processed polymer insulator

Jin Hyuk Bae, Jaehoon Park, Chang Min Keum, Won Ho Kim, Min Hoi Kim, Seul Ong Kim, Soon Ki Kwon, Sin Doo Lee

School of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

70 Scopus citations

Abstract

We report the thermal annealing effect on the mobility enhancement, the crack development, and the stability of 6,13-bis(triisopropylsilylethynyl) (TIPS)-pentacene field-effect transistors (FETs) with a solution-processed polymeric insulator. A high value of the field-effect mobility (0.401 cm²/V s) is achieved by thermally annealing the TIPS-pentacene FET at 60 °C which corresponds to the baking temperature of the TIPS-pentacene film. We demonstrate that thermal cracks, resulting primarily from side chains of the TIPS-pentacene, play a critical role on the degradation of the electrical properties of TIPS-pentacene FET, particularly in air under atmospheric pressure. The annealing effect is found to suppress both the development of the cracks and the increase of the off-current with time in the ambient environment. It is suggested that the cracks act as trapping sites of moisture and/or oxygen for the off-current flow and thus deteriorate the electrical performances of the TIPS-pentacene FET.

Original language	English
Pages (from-to)	784-788
Number of pages	5
Journal	Organic Electronics
Volume	11
Issue number	5
DOIs	https://doi.org/10.1016/j.orgel.2010.01.019
State	Published - May 2010

Keywords

Cracks
Solution-processed
TIPS-pentacene FET
Trapping sites

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10.1016/j.orgel.2010.01.019

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Bae, J. H., Park, J., Keum, C. M., Kim, W. H., Kim, M. H., Kim, S. O., Kwon, S. K., & Lee, S. D. (2010). Thermal annealing effect on the crack development and the stability of 6,13-bis(triisopropylsilylethynyl)-pentacene field-effect transistors with a solution-processed polymer insulator. Organic Electronics, 11(5), 784-788. https://doi.org/10.1016/j.orgel.2010.01.019

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title = "Thermal annealing effect on the crack development and the stability of 6,13-bis(triisopropylsilylethynyl)-pentacene field-effect transistors with a solution-processed polymer insulator",

abstract = "We report the thermal annealing effect on the mobility enhancement, the crack development, and the stability of 6,13-bis(triisopropylsilylethynyl) (TIPS)-pentacene field-effect transistors (FETs) with a solution-processed polymeric insulator. A high value of the field-effect mobility (0.401 cm2/V s) is achieved by thermally annealing the TIPS-pentacene FET at 60 °C which corresponds to the baking temperature of the TIPS-pentacene film. We demonstrate that thermal cracks, resulting primarily from side chains of the TIPS-pentacene, play a critical role on the degradation of the electrical properties of TIPS-pentacene FET, particularly in air under atmospheric pressure. The annealing effect is found to suppress both the development of the cracks and the increase of the off-current with time in the ambient environment. It is suggested that the cracks act as trapping sites of moisture and/or oxygen for the off-current flow and thus deteriorate the electrical performances of the TIPS-pentacene FET.",

keywords = "Cracks, Solution-processed, TIPS-pentacene FET, Trapping sites",

author = "Bae, {Jin Hyuk} and Jaehoon Park and Keum, {Chang Min} and Kim, {Won Ho} and Kim, {Min Hoi} and Kim, {Seul Ong} and Kwon, {Soon Ki} and Lee, {Sin Doo}",

year = "2010",

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doi = "10.1016/j.orgel.2010.01.019",

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volume = "11",

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Thermal annealing effect on the crack development and the stability of 6,13-bis(triisopropylsilylethynyl)-pentacene field-effect transistors with a solution-processed polymer insulator. / Bae, Jin Hyuk; Park, Jaehoon; Keum, Chang Min et al.
In: Organic Electronics, Vol. 11, No. 5, 05.2010, p. 784-788.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Thermal annealing effect on the crack development and the stability of 6,13-bis(triisopropylsilylethynyl)-pentacene field-effect transistors with a solution-processed polymer insulator

AU - Bae, Jin Hyuk

AU - Park, Jaehoon

AU - Keum, Chang Min

AU - Kim, Won Ho

AU - Kim, Min Hoi

AU - Kim, Seul Ong

AU - Kwon, Soon Ki

AU - Lee, Sin Doo

PY - 2010/5

Y1 - 2010/5

N2 - We report the thermal annealing effect on the mobility enhancement, the crack development, and the stability of 6,13-bis(triisopropylsilylethynyl) (TIPS)-pentacene field-effect transistors (FETs) with a solution-processed polymeric insulator. A high value of the field-effect mobility (0.401 cm2/V s) is achieved by thermally annealing the TIPS-pentacene FET at 60 °C which corresponds to the baking temperature of the TIPS-pentacene film. We demonstrate that thermal cracks, resulting primarily from side chains of the TIPS-pentacene, play a critical role on the degradation of the electrical properties of TIPS-pentacene FET, particularly in air under atmospheric pressure. The annealing effect is found to suppress both the development of the cracks and the increase of the off-current with time in the ambient environment. It is suggested that the cracks act as trapping sites of moisture and/or oxygen for the off-current flow and thus deteriorate the electrical performances of the TIPS-pentacene FET.

AB - We report the thermal annealing effect on the mobility enhancement, the crack development, and the stability of 6,13-bis(triisopropylsilylethynyl) (TIPS)-pentacene field-effect transistors (FETs) with a solution-processed polymeric insulator. A high value of the field-effect mobility (0.401 cm2/V s) is achieved by thermally annealing the TIPS-pentacene FET at 60 °C which corresponds to the baking temperature of the TIPS-pentacene film. We demonstrate that thermal cracks, resulting primarily from side chains of the TIPS-pentacene, play a critical role on the degradation of the electrical properties of TIPS-pentacene FET, particularly in air under atmospheric pressure. The annealing effect is found to suppress both the development of the cracks and the increase of the off-current with time in the ambient environment. It is suggested that the cracks act as trapping sites of moisture and/or oxygen for the off-current flow and thus deteriorate the electrical performances of the TIPS-pentacene FET.

KW - Cracks

KW - Solution-processed

KW - TIPS-pentacene FET

KW - Trapping sites

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Thermal annealing effect on the crack development and the stability of 6,13-bis(triisopropylsilylethynyl)-pentacene field-effect transistors with a solution-processed polymer insulator

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