TY - GEN
T1 - Thermal impact study of block folding and face-to-face bonding in 3D IC
AU - Peng, Yarui
AU - Jung, Moongon
AU - Song, Taigon
AU - Wan, Yang
AU - Lim, Sung Kyu
N1 - Publisher Copyright:
© 2015 IEEE.
PY - 2015/11/10
Y1 - 2015/11/10
N2 - In this paper we study the thermal impact of two high impact design/technology choices for 3D ICs, i.e., block folding and face-to-face bonding. A recent study shows that block folding and face-to-face improve wirelength, power, and performance, but the impact on thermal issue is not studied. Based on commercial-quality 3D IC layouts of large-scale OpenSPARC T2 designs and a highly accurate GDSII-level thermal analysis flow, our results first show that block folding, despite its power density increase, does not worsen thermal issues because of additional TSVs that act as heat conductors. In addition, face-to-face bonding, despite its thermal benefit from the absence of BCB bonding layer and underfill, still does not improve temperature much because of the small F2F via sizes.
AB - In this paper we study the thermal impact of two high impact design/technology choices for 3D ICs, i.e., block folding and face-to-face bonding. A recent study shows that block folding and face-to-face improve wirelength, power, and performance, but the impact on thermal issue is not studied. Based on commercial-quality 3D IC layouts of large-scale OpenSPARC T2 designs and a highly accurate GDSII-level thermal analysis flow, our results first show that block folding, despite its power density increase, does not worsen thermal issues because of additional TSVs that act as heat conductors. In addition, face-to-face bonding, despite its thermal benefit from the absence of BCB bonding layer and underfill, still does not improve temperature much because of the small F2F via sizes.
KW - Bonding
KW - Conductivity
KW - Heating
KW - Thermal analysis
KW - Thermal conductivity
KW - Three-dimensional displays
KW - Through-silicon vias
UR - http://www.scopus.com/inward/record.url?scp=84961882167&partnerID=8YFLogxK
U2 - 10.1109/IITC-MAM.2015.7325593
DO - 10.1109/IITC-MAM.2015.7325593
M3 - Conference contribution
AN - SCOPUS:84961882167
T3 - 2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference, IITC/MAM 2015
SP - 331
EP - 333
BT - 2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference, IITC/MAM 2015
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference, IITC/MAM 2015
Y2 - 18 May 2015 through 21 May 2015
ER -