Thermal stability of ion-implanted hydrogen in ZnO

K. Ip; M. E. Overberg; Y. W. Heo; D. P. Norton; S. J. Pearton; S. O. Kucheyev; C. Jagadish; J. S. Williams; R. G. Wilson; J. M. Zavada

doi:10.1063/1.1524033

Thermal stability of ion-implanted hydrogen in ZnO

K. Ip
, M. E. Overberg
, Y. W. Heo
, D. P. Norton
, S. J. Pearton
, S. O. Kucheyev
, C. Jagadish
, J. S. Williams
, R. G. Wilson
, J. M. Zavada

University of Florida
Australian National University
Lawrence Livermore National Laboratory
Consultant
United States Army Research Office

Research output: Contribution to journal › Article › peer-review

110 Scopus citations

Abstract

An investigation of thermodynamic stability of ion-implanted hydrogen in ZnO was presented. Secondary ion mass spectrometry was used for the analysis. Rutherford backscattering/channeling of samples implanted with ¹H showed no change in backscattering yield near the ZnO surface. It was found by cathodoluminescence and photoluminescence studies that the intensity of the near gap emission from ZnO is reduced more than two orders of magnitude from the values in unimplanted samples.

Original language	English
Pages (from-to)	3996-3998
Number of pages	3
Journal	Applied Physics Letters
Volume	81
Issue number	21
DOIs	https://doi.org/10.1063/1.1524033
State	Published - 18 Nov 2002

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10.1063/1.1524033

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@article{43524ef467c6401dbf35d50d0928eb29,

title = "Thermal stability of ion-implanted hydrogen in ZnO",

abstract = "An investigation of thermodynamic stability of ion-implanted hydrogen in ZnO was presented. Secondary ion mass spectrometry was used for the analysis. Rutherford backscattering/channeling of samples implanted with 1H showed no change in backscattering yield near the ZnO surface. It was found by cathodoluminescence and photoluminescence studies that the intensity of the near gap emission from ZnO is reduced more than two orders of magnitude from the values in unimplanted samples.",

author = "K. Ip and Overberg, \{M. E.\} and Heo, \{Y. W.\} and Norton, \{D. P.\} and Pearton, \{S. J.\} and Kucheyev, \{S. O.\} and C. Jagadish and Williams, \{J. S.\} and Wilson, \{R. G.\} and Zavada, \{J. M.\}",

year = "2002",

month = nov,

day = "18",

doi = "10.1063/1.1524033",

language = "English",

volume = "81",

pages = "3996--3998",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "21",

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TY - JOUR

T1 - Thermal stability of ion-implanted hydrogen in ZnO

AU - Ip, K.

AU - Overberg, M. E.

AU - Heo, Y. W.

AU - Norton, D. P.

AU - Pearton, S. J.

AU - Kucheyev, S. O.

AU - Jagadish, C.

AU - Williams, J. S.

AU - Wilson, R. G.

AU - Zavada, J. M.

PY - 2002/11/18

Y1 - 2002/11/18

N2 - An investigation of thermodynamic stability of ion-implanted hydrogen in ZnO was presented. Secondary ion mass spectrometry was used for the analysis. Rutherford backscattering/channeling of samples implanted with 1H showed no change in backscattering yield near the ZnO surface. It was found by cathodoluminescence and photoluminescence studies that the intensity of the near gap emission from ZnO is reduced more than two orders of magnitude from the values in unimplanted samples.

AB - An investigation of thermodynamic stability of ion-implanted hydrogen in ZnO was presented. Secondary ion mass spectrometry was used for the analysis. Rutherford backscattering/channeling of samples implanted with 1H showed no change in backscattering yield near the ZnO surface. It was found by cathodoluminescence and photoluminescence studies that the intensity of the near gap emission from ZnO is reduced more than two orders of magnitude from the values in unimplanted samples.

UR - https://www.scopus.com/pages/publications/0037132224

U2 - 10.1063/1.1524033

DO - 10.1063/1.1524033

M3 - Article

AN - SCOPUS:0037132224

SN - 0003-6951

VL - 81

SP - 3996

EP - 3998

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

ER -

Thermal stability of ion-implanted hydrogen in ZnO

Abstract

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