Thermally activated non-linearity of device in resistance-switching memory for cross-point array applications

Jiyong Woo; Seonghyun Kim; Wootae Lee; Daeseok Lee; Sangsu Park; Godeuni Choi; Euijun Cha; Hyunsang Hwang

doi:10.1063/1.4799148

Thermally activated non-linearity of device in resistance-switching memory for cross-point array applications

Jiyong Woo, Seonghyun Kim, Wootae Lee, Daeseok Lee, Sangsu Park, Godeuni Choi, Euijun Cha, Hyunsang Hwang

School of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

We report a TiO_x-based resistance-switching device that exhibits non-linearity in the low resistance state (LRS) under high operating current conditions for cross-point array applications. The transition of the conduction behavior in the LRS from linear to non-linear type was observed in the TiO _x/TiO_y bilayered structure by controlling programming currents. Our results suggest that the non-linear conduction behavior is activated in a thermally formed suboxide region due to lots of heat during the switching. By using achieved non-linearity of device, a one-resistor memory cell can be used for the suppression of sneak-path currents without the need for additional selector device.

Original language	English
Article number	122115
Journal	Applied Physics Letters
Volume	102
Issue number	12
DOIs	https://doi.org/10.1063/1.4799148
State	Published - 25 Mar 2013

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title = "Thermally activated non-linearity of device in resistance-switching memory for cross-point array applications",

abstract = "We report a TiOx-based resistance-switching device that exhibits non-linearity in the low resistance state (LRS) under high operating current conditions for cross-point array applications. The transition of the conduction behavior in the LRS from linear to non-linear type was observed in the TiO x/TiOy bilayered structure by controlling programming currents. Our results suggest that the non-linear conduction behavior is activated in a thermally formed suboxide region due to lots of heat during the switching. By using achieved non-linearity of device, a one-resistor memory cell can be used for the suppression of sneak-path currents without the need for additional selector device.",

author = "Jiyong Woo and Seonghyun Kim and Wootae Lee and Daeseok Lee and Sangsu Park and Godeuni Choi and Euijun Cha and Hyunsang Hwang",

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T1 - Thermally activated non-linearity of device in resistance-switching memory for cross-point array applications

AU - Woo, Jiyong

AU - Kim, Seonghyun

AU - Lee, Wootae

AU - Lee, Daeseok

AU - Park, Sangsu

AU - Choi, Godeuni

AU - Cha, Euijun

AU - Hwang, Hyunsang

PY - 2013/3/25

Y1 - 2013/3/25

N2 - We report a TiOx-based resistance-switching device that exhibits non-linearity in the low resistance state (LRS) under high operating current conditions for cross-point array applications. The transition of the conduction behavior in the LRS from linear to non-linear type was observed in the TiO x/TiOy bilayered structure by controlling programming currents. Our results suggest that the non-linear conduction behavior is activated in a thermally formed suboxide region due to lots of heat during the switching. By using achieved non-linearity of device, a one-resistor memory cell can be used for the suppression of sneak-path currents without the need for additional selector device.

AB - We report a TiOx-based resistance-switching device that exhibits non-linearity in the low resistance state (LRS) under high operating current conditions for cross-point array applications. The transition of the conduction behavior in the LRS from linear to non-linear type was observed in the TiO x/TiOy bilayered structure by controlling programming currents. Our results suggest that the non-linear conduction behavior is activated in a thermally formed suboxide region due to lots of heat during the switching. By using achieved non-linearity of device, a one-resistor memory cell can be used for the suppression of sneak-path currents without the need for additional selector device.

UR - https://www.scopus.com/pages/publications/84875933362

U2 - 10.1063/1.4799148

DO - 10.1063/1.4799148

M3 - Article

AN - SCOPUS:84875933362

SN - 0003-6951

VL - 102

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

M1 - 122115

ER -

Thermally activated non-linearity of device in resistance-switching memory for cross-point array applications

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