Thermally-assisted Ti/Pr 0.7Ca 0.3MnO 3 ReRAM with excellent switching speed and retention characteristics

Seungjae Jung; Manzar Siddik; Wootae Lee; Jubong Park; Xinjun Liu; Jiyong Woo; Godeuni Choi; Joonmyoung Lee; Nodo Lee; Yun Hee Jang; Hyunsang Hwang

doi:10.1109/IEDM.2011.6131483

Thermally-assisted Ti/Pr _0.7Ca _0.3MnO ₃ ReRAM with excellent switching speed and retention characteristics

Seungjae Jung
, Manzar Siddik
, Wootae Lee
, Jubong Park
, Xinjun Liu
, Jiyong Woo
, Godeuni Choi
, Joonmyoung Lee
, Nodo Lee
, Yun Hee Jang
, Hyunsang Hwang

School of Electronics Engineering

Gwangju Institute of Science and Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

12 Scopus citations

Abstract

We proposed for the first time thermally-assisted resistive switching random access memory (ReRAM) device to overcome the voltage-time dilemma [1] using Ti/Pr _0.7Ca _0.3MnO ₃ (Ti/PCMO) with Ge ₂Sb ₂Te ₅ (GST) thermoelectric heater as well as thermal barrier (Fig. 1). "Thermoelectric heating effect" from GST/Ti junction [2] and "thermal barrier effect" from the heat confinement by GST and PCMO thermal insulators [3,4] successfully improved switching speed while "large effective Schottky barrier (SB) height (Φ _eff) " provided excellent robustness to high-temperature retention and read/set/reset disturbance characteristics (Fig. 2).

Original language	English
Title of host publication	2011 International Electron Devices Meeting, IEDM 2011
Pages	3.6.1-3.6.4
DOIs	https://doi.org/10.1109/IEDM.2011.6131483
State	Published - 2011
Event	2011 IEEE International Electron Devices Meeting, IEDM 2011 - Washington, DC, United States Duration: 5 Dec 2011 → 7 Dec 2011

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Conference

Conference	2011 IEEE International Electron Devices Meeting, IEDM 2011
Country/Territory	United States
City	Washington, DC
Period	5/12/11 → 7/12/11

Access to Document

10.1109/IEDM.2011.6131483

Cite this

Jung, S., Siddik, M., Lee, W., Park, J., Liu, X., Woo, J., Choi, G., Lee, J., Lee, N., Jang, Y. H., & Hwang, H. (2011). Thermally-assisted Ti/Pr _0.7Ca _0.3MnO ₃ ReRAM with excellent switching speed and retention characteristics. In 2011 International Electron Devices Meeting, IEDM 2011 (pp. 3.6.1-3.6.4). Article 6131483 (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2011.6131483

@inproceedings{99e07871c199453a8107a97ee0cb0547,

title = "Thermally-assisted Ti/Pr 0.7Ca 0.3MnO 3 ReRAM with excellent switching speed and retention characteristics",

abstract = "We proposed for the first time thermally-assisted resistive switching random access memory (ReRAM) device to overcome the voltage-time dilemma [1] using Ti/Pr 0.7Ca 0.3MnO 3 (Ti/PCMO) with Ge 2Sb 2Te 5 (GST) thermoelectric heater as well as thermal barrier (Fig. 1). {"}Thermoelectric heating effect{"} from GST/Ti junction [2] and {"}thermal barrier effect{"} from the heat confinement by GST and PCMO thermal insulators [3,4] successfully improved switching speed while {"}large effective Schottky barrier (SB) height (Φ eff) {"} provided excellent robustness to high-temperature retention and read/set/reset disturbance characteristics (Fig. 2).",

author = "Seungjae Jung and Manzar Siddik and Wootae Lee and Jubong Park and Xinjun Liu and Jiyong Woo and Godeuni Choi and Joonmyoung Lee and Nodo Lee and Jang, \{Yun Hee\} and Hyunsang Hwang",

year = "2011",

doi = "10.1109/IEDM.2011.6131483",

language = "English",

isbn = "9781457705052",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

pages = "3.6.1--3.6.4",

booktitle = "2011 International Electron Devices Meeting, IEDM 2011",

note = "2011 IEEE International Electron Devices Meeting, IEDM 2011 ; Conference date: 05-12-2011 Through 07-12-2011",

}

Jung, S, Siddik, M, Lee, W, Park, J, Liu, X, Woo, J, Choi, G, Lee, J, Lee, N, Jang, YH & Hwang, H 2011, Thermally-assisted Ti/Pr _0.7Ca _0.3MnO ₃ ReRAM with excellent switching speed and retention characteristics. in 2011 International Electron Devices Meeting, IEDM 2011., 6131483, Technical Digest - International Electron Devices Meeting, IEDM, pp. 3.6.1-3.6.4, 2011 IEEE International Electron Devices Meeting, IEDM 2011, Washington, DC, United States, 5/12/11. https://doi.org/10.1109/IEDM.2011.6131483

Thermally-assisted Ti/Pr _0.7Ca _0.3MnO ₃ ReRAM with excellent switching speed and retention characteristics. / Jung, Seungjae; Siddik, Manzar; Lee, Wootae et al.
2011 International Electron Devices Meeting, IEDM 2011. 2011. p. 3.6.1-3.6.4 6131483 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Jung, Seungjae

AU - Siddik, Manzar

AU - Lee, Wootae

AU - Park, Jubong

AU - Liu, Xinjun

AU - Woo, Jiyong

AU - Choi, Godeuni

AU - Lee, Joonmyoung

AU - Lee, Nodo

AU - Jang, Yun Hee

AU - Hwang, Hyunsang

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AB - We proposed for the first time thermally-assisted resistive switching random access memory (ReRAM) device to overcome the voltage-time dilemma [1] using Ti/Pr 0.7Ca 0.3MnO 3 (Ti/PCMO) with Ge 2Sb 2Te 5 (GST) thermoelectric heater as well as thermal barrier (Fig. 1). "Thermoelectric heating effect" from GST/Ti junction [2] and "thermal barrier effect" from the heat confinement by GST and PCMO thermal insulators [3,4] successfully improved switching speed while "large effective Schottky barrier (SB) height (Φ eff) " provided excellent robustness to high-temperature retention and read/set/reset disturbance characteristics (Fig. 2).

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T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 3.6.1-3.6.4

BT - 2011 International Electron Devices Meeting, IEDM 2011

T2 - 2011 IEEE International Electron Devices Meeting, IEDM 2011

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