TY - JOUR
T1 - Thermoelectric and Magnetic Properties of Biphasic ZrFe0.5Ni0.5Sb Double Half-Heusler and ZrNiSb Half-Heusler Induced by Co Doping
AU - Kahiu, Joseph Ngugi
AU - Kihoi, Samuel Kimani
AU - Kim, Hyunji
AU - Lee, Ho Seong
N1 - Publisher Copyright:
© 2024 American Chemical Society.
PY - 2024/3/26
Y1 - 2024/3/26
N2 - Improving the efficiency of upcoming thermoelectric (TE) materials and exploring their potential for various niche applications are among the promising strategies for addressing the challenges that impede the commercialization of traditional TE materials. This work reports the results of efforts to improve the performance of the recently optimized ZrFe0.4Ni0.6Sb double half-Heusler (DhH) by cobalt (Co) doping. The synthesized ZrFe0.4-yCoyNi0.6Sb samples exhibit phase separation into coherent biphasic DhH and ZrNiSb phases with greatly improved electrical conductivity, which increases from ∼400 S/cm in sample y = 0 to ∼3886 S/cm in sample y = 0.4 at room temperature. In addition to the suppression of bipolar conduction, the thermal conductivity also decreases by ∼18% in sample y = 0.1 compared to sample y = 0, which can be attributed to the enhanced phonon scattering and leads to an increase in peak zT from 0.33 in sample y = 0 to 0.37 in sample y = 0.1 at 973 K. Unfortunately, higher doping concentrations not only deteriorate the Seebeck coefficient but also excessively increase the electronic and lattice thermal conductivities, leading to lower zT values in the samples y > 0.1. By synthesizing and analyzing the (ZrFe0.4Ni0.6NiSb)1-z + (ZrNiSb)z samples, it is confirmed that the ZrNiSb phases are responsible for the appalling TE performance in the y > 0.1 samples. Further investigation using the recently restructured single parabolic model shows that the ZrFe0.4Ni0.6NiSb system was already overdoped before Co doping, which explains the reason for the resulting PF decrease. Finally, the ferromagnetic nature and tunable magnetism of the synthesized samples are revealed by using a vibrating sample magnetometer to study their magnetism, expanding their range of potential niche applications in spintronics.
AB - Improving the efficiency of upcoming thermoelectric (TE) materials and exploring their potential for various niche applications are among the promising strategies for addressing the challenges that impede the commercialization of traditional TE materials. This work reports the results of efforts to improve the performance of the recently optimized ZrFe0.4Ni0.6Sb double half-Heusler (DhH) by cobalt (Co) doping. The synthesized ZrFe0.4-yCoyNi0.6Sb samples exhibit phase separation into coherent biphasic DhH and ZrNiSb phases with greatly improved electrical conductivity, which increases from ∼400 S/cm in sample y = 0 to ∼3886 S/cm in sample y = 0.4 at room temperature. In addition to the suppression of bipolar conduction, the thermal conductivity also decreases by ∼18% in sample y = 0.1 compared to sample y = 0, which can be attributed to the enhanced phonon scattering and leads to an increase in peak zT from 0.33 in sample y = 0 to 0.37 in sample y = 0.1 at 973 K. Unfortunately, higher doping concentrations not only deteriorate the Seebeck coefficient but also excessively increase the electronic and lattice thermal conductivities, leading to lower zT values in the samples y > 0.1. By synthesizing and analyzing the (ZrFe0.4Ni0.6NiSb)1-z + (ZrNiSb)z samples, it is confirmed that the ZrNiSb phases are responsible for the appalling TE performance in the y > 0.1 samples. Further investigation using the recently restructured single parabolic model shows that the ZrFe0.4Ni0.6NiSb system was already overdoped before Co doping, which explains the reason for the resulting PF decrease. Finally, the ferromagnetic nature and tunable magnetism of the synthesized samples are revealed by using a vibrating sample magnetometer to study their magnetism, expanding their range of potential niche applications in spintronics.
KW - magnetic semiconductors
KW - modulation doping effect
KW - phase separation
KW - phonon scattering
KW - ZrFeNiSb
UR - http://www.scopus.com/inward/record.url?scp=85187388896&partnerID=8YFLogxK
U2 - 10.1021/acsaelm.3c01749
DO - 10.1021/acsaelm.3c01749
M3 - Article
AN - SCOPUS:85187388896
SN - 2637-6113
VL - 6
SP - 1829
EP - 1840
JO - ACS Applied Electronic Materials
JF - ACS Applied Electronic Materials
IS - 3
ER -