TY - JOUR
T1 - Thermoelectric properties of Mn, Bi, and Sb co-doped SnTe with a low lattice thermal conductivity
AU - Kihoi, Samuel Kimani
AU - Kim, Hyunho
AU - Jeong, Hyerin
AU - Kim, Hyunji
AU - Ryu, J.
AU - Yi, Seonghoon
AU - Lee, Ho Seong
N1 - Publisher Copyright:
© 2019 Elsevier B.V.
PY - 2019/10/25
Y1 - 2019/10/25
N2 - Over a period, there has been extensive research on both single and binary elements co-doping in SnTe. For the first time, we have investigated the effects of ternary dopants, Mn, Bi, and Sb, in SnTe with an aim of employing their synergetic effects to improve the Seebeck coefficient, consequently to increase the power factor and to lower the lattice thermal conductivity (κlat). Pristine SnTe exhibits a high electrical conductivity of 6320 S/cm, where after Mn isovalent and Bi and Sb aliovalent substitution at the Sn site, the electrical conductivity reduced up to 1530 S/cm at room temperature. As a result of the tuning of the carrier concentration, an increased Seebeck coefficient in all samples is observed. Compared to equivalent doping proportion of each dopant, a higher power factor of ∼22 μW/cmK2 is recorded. Stronger phonon scattering resulting from mass fluctuation in the multiple dopants, grain size, embedded nanostructures in the grain, and strained Mn–rich nano–precipitates in the grain boundary results in a low lattice thermal conductivity, with the lowest value recorded being ∼0.86 W/mK at 773 K. As a result, a ZT value of ∼1 at 773 K is recorded for the Sn0.85Mn0.09Sb0.035Bi0.025Te sample, which is a 271% improvement from our pristine SnTe.
AB - Over a period, there has been extensive research on both single and binary elements co-doping in SnTe. For the first time, we have investigated the effects of ternary dopants, Mn, Bi, and Sb, in SnTe with an aim of employing their synergetic effects to improve the Seebeck coefficient, consequently to increase the power factor and to lower the lattice thermal conductivity (κlat). Pristine SnTe exhibits a high electrical conductivity of 6320 S/cm, where after Mn isovalent and Bi and Sb aliovalent substitution at the Sn site, the electrical conductivity reduced up to 1530 S/cm at room temperature. As a result of the tuning of the carrier concentration, an increased Seebeck coefficient in all samples is observed. Compared to equivalent doping proportion of each dopant, a higher power factor of ∼22 μW/cmK2 is recorded. Stronger phonon scattering resulting from mass fluctuation in the multiple dopants, grain size, embedded nanostructures in the grain, and strained Mn–rich nano–precipitates in the grain boundary results in a low lattice thermal conductivity, with the lowest value recorded being ∼0.86 W/mK at 773 K. As a result, a ZT value of ∼1 at 773 K is recorded for the Sn0.85Mn0.09Sb0.035Bi0.025Te sample, which is a 271% improvement from our pristine SnTe.
KW - Lattice thermal conductivity
KW - Nanostructuring
KW - SnTe
KW - Synergetic effect
KW - Thermoelectric
UR - http://www.scopus.com/inward/record.url?scp=85069856443&partnerID=8YFLogxK
U2 - 10.1016/j.jallcom.2019.07.220
DO - 10.1016/j.jallcom.2019.07.220
M3 - Article
AN - SCOPUS:85069856443
SN - 0925-8388
VL - 806
SP - 361
EP - 369
JO - Journal of Alloys and Compounds
JF - Journal of Alloys and Compounds
ER -