Threshold Selector with High Selectivity and Steep Slope for Cross-Point Memory Array

Jeonghwan Song; Jiyong Woo; Amit Prakash; Daeseok Lee; Hyunsang Hwang

doi:10.1109/LED.2015.2430332

Threshold Selector with High Selectivity and Steep Slope for Cross-Point Memory Array

Jeonghwan Song
, Jiyong Woo
, Amit Prakash
, Daeseok Lee
, Hyunsang Hwang

School of Electronics Engineering

Pohang University of Science and Technology

Research output: Contribution to journal › Article › peer-review

159 Scopus citations

Abstract

In this letter, we demonstrated a new type of threshold selector with excellent electrical characteristics for cross-point memory array. The proposed Ag/TiO₂-based threshold selector device showed high selectivity ( \sim 10^{\mathrm {\mathbf {7}}} ) and steep slope ( <5 mV/decade). The observed threshold switching in programmable metallization cell device occurred due to the spontaneous rupturing of silver (Ag) filament. The Ag ionization to minimize the steric repulsion between Ag and surrounding TiO₂ electrolyte was the main origin of the spontaneous rupture.

Original language	English
Article number	7102702
Pages (from-to)	681-683
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	36
Issue number	7
DOIs	https://doi.org/10.1109/LED.2015.2430332
State	Published - 1 Jul 2015

Keywords

cross-point memory array
PMC
Selector device
spontaneous rupture
threshold switching

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10.1109/LED.2015.2430332

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title = "Threshold Selector with High Selectivity and Steep Slope for Cross-Point Memory Array",

abstract = "In this letter, we demonstrated a new type of threshold selector with excellent electrical characteristics for cross-point memory array. The proposed Ag/TiO2-based threshold selector device showed high selectivity ( \textbackslash{}sim 10\textasciicircum{}\{\textbackslash{}mathrm \{\textbackslash{}mathbf \{7\}\}\} ) and steep slope ( <5 mV/decade). The observed threshold switching in programmable metallization cell device occurred due to the spontaneous rupturing of silver (Ag) filament. The Ag ionization to minimize the steric repulsion between Ag and surrounding TiO2 electrolyte was the main origin of the spontaneous rupture.",

keywords = "cross-point memory array, PMC, Selector device, spontaneous rupture, threshold switching",

author = "Jeonghwan Song and Jiyong Woo and Amit Prakash and Daeseok Lee and Hyunsang Hwang",

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T1 - Threshold Selector with High Selectivity and Steep Slope for Cross-Point Memory Array

AU - Song, Jeonghwan

AU - Woo, Jiyong

AU - Prakash, Amit

AU - Lee, Daeseok

AU - Hwang, Hyunsang

PY - 2015/7/1

Y1 - 2015/7/1

N2 - In this letter, we demonstrated a new type of threshold selector with excellent electrical characteristics for cross-point memory array. The proposed Ag/TiO2-based threshold selector device showed high selectivity ( \sim 10^{\mathrm {\mathbf {7}}} ) and steep slope ( <5 mV/decade). The observed threshold switching in programmable metallization cell device occurred due to the spontaneous rupturing of silver (Ag) filament. The Ag ionization to minimize the steric repulsion between Ag and surrounding TiO2 electrolyte was the main origin of the spontaneous rupture.

AB - In this letter, we demonstrated a new type of threshold selector with excellent electrical characteristics for cross-point memory array. The proposed Ag/TiO2-based threshold selector device showed high selectivity ( \sim 10^{\mathrm {\mathbf {7}}} ) and steep slope ( <5 mV/decade). The observed threshold switching in programmable metallization cell device occurred due to the spontaneous rupturing of silver (Ag) filament. The Ag ionization to minimize the steric repulsion between Ag and surrounding TiO2 electrolyte was the main origin of the spontaneous rupture.

KW - cross-point memory array

KW - PMC

KW - Selector device

KW - spontaneous rupture

KW - threshold switching

UR - https://www.scopus.com/pages/publications/84934273646

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DO - 10.1109/LED.2015.2430332

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 7

M1 - 7102702

ER -

Threshold Selector with High Selectivity and Steep Slope for Cross-Point Memory Array

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