Threshold switching behavior of Ag-Si based selector device and hydrogen doping effect on its characteristics

Jongmyung Yoo; Jiyong Woo; Jeonghwan Song; Hyunsang Hwang

doi:10.1063/1.4938548

Threshold switching behavior of Ag-Si based selector device and hydrogen doping effect on its characteristics

Jongmyung Yoo, Jiyong Woo, Jeonghwan Song, Hyunsang Hwang

School of Electronics Engineering

Pohang University of Science and Technology

Research output: Contribution to journal › Article › peer-review

52 Scopus citations

Abstract

The effect of hydrogen treatment on the threshold switching property in a Ag/amorphous Si based programmable metallization cells was investigated for selector device applications. Using the Ag filament formed during motion of Ag ions, a steep-slope (5 mV/dec.) for threshold switching with higher selectivity (∼10⁵) could be achieved. Because of the faster diffusivity of Ag atoms, which are inside solid-electrolytes, the resulting Ag filament could easily be dissolved under low current regime, where the Ag filament possesses weak stability. We found that the dissolution process could be further enhanced by hydrogen treatment that facilitated the movement of the Ag atoms.

Original language	English
Article number	127221
Journal	AIP Advances
Volume	5
Issue number	12
DOIs	https://doi.org/10.1063/1.4938548
State	Published - 1 Dec 2015

Access to Document

10.1063/1.4938548

Cite this

@article{54e04d75563b4328b0e0bcd4735b337d,

title = "Threshold switching behavior of Ag-Si based selector device and hydrogen doping effect on its characteristics",

abstract = "The effect of hydrogen treatment on the threshold switching property in a Ag/amorphous Si based programmable metallization cells was investigated for selector device applications. Using the Ag filament formed during motion of Ag ions, a steep-slope (5 mV/dec.) for threshold switching with higher selectivity (∼105) could be achieved. Because of the faster diffusivity of Ag atoms, which are inside solid-electrolytes, the resulting Ag filament could easily be dissolved under low current regime, where the Ag filament possesses weak stability. We found that the dissolution process could be further enhanced by hydrogen treatment that facilitated the movement of the Ag atoms.",

author = "Jongmyung Yoo and Jiyong Woo and Jeonghwan Song and Hyunsang Hwang",

note = "Publisher Copyright: {\textcopyright} 2015 Author(s).",

year = "2015",

month = dec,

day = "1",

doi = "10.1063/1.4938548",

language = "English",

volume = "5",

journal = "AIP Advances",

issn = "2158-3226",

publisher = "American Institute of Physics",

number = "12",

}

TY - JOUR

T1 - Threshold switching behavior of Ag-Si based selector device and hydrogen doping effect on its characteristics

AU - Yoo, Jongmyung

AU - Woo, Jiyong

AU - Song, Jeonghwan

AU - Hwang, Hyunsang

PY - 2015/12/1

Y1 - 2015/12/1

N2 - The effect of hydrogen treatment on the threshold switching property in a Ag/amorphous Si based programmable metallization cells was investigated for selector device applications. Using the Ag filament formed during motion of Ag ions, a steep-slope (5 mV/dec.) for threshold switching with higher selectivity (∼105) could be achieved. Because of the faster diffusivity of Ag atoms, which are inside solid-electrolytes, the resulting Ag filament could easily be dissolved under low current regime, where the Ag filament possesses weak stability. We found that the dissolution process could be further enhanced by hydrogen treatment that facilitated the movement of the Ag atoms.

AB - The effect of hydrogen treatment on the threshold switching property in a Ag/amorphous Si based programmable metallization cells was investigated for selector device applications. Using the Ag filament formed during motion of Ag ions, a steep-slope (5 mV/dec.) for threshold switching with higher selectivity (∼105) could be achieved. Because of the faster diffusivity of Ag atoms, which are inside solid-electrolytes, the resulting Ag filament could easily be dissolved under low current regime, where the Ag filament possesses weak stability. We found that the dissolution process could be further enhanced by hydrogen treatment that facilitated the movement of the Ag atoms.

UR - https://www.scopus.com/pages/publications/84951002551

U2 - 10.1063/1.4938548

DO - 10.1063/1.4938548

M3 - Article

AN - SCOPUS:84951002551

SN - 2158-3226

VL - 5

JO - AIP Advances

JF - AIP Advances

IS - 12

M1 - 127221

ER -

Threshold switching behavior of Ag-Si based selector device and hydrogen doping effect on its characteristics

Abstract

Access to Document

Other files and links

Fingerprint

Cite this