Through Silicon Via (TSV) shielding structures

Jonghyun Cho; Joohee Kim; Taigon Song; Jun So Pak; Joungho Kim; Hyungdong Lee; Junho Lee; Kunwoo Park

doi:10.1109/EPEPS.2010.5642590

Through Silicon Via (TSV) shielding structures

Jonghyun Cho, Joohee Kim, Taigon Song, Jun So Pak, Joungho Kim, Hyungdong Lee, Junho Lee, Kunwoo Park

School of Electronics Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

15 Scopus citations

Abstract

Three different shielding structures for noise coupling suppression between through silicon vias (TSVs) are proposed in this manuscript. These structures are modeled using the 3-dimensional transmission line matrix (3D-TLM) method, and the model is verified using EM-simulation. The shielding structures are analyzed with regard to consumption area, manufacturing process compatibility, and noise isolation levels in low, mid, and high frequency ranges. Each shielding structure has unique advantages and disadvantages, and selection of an appropriate shielding structure is needed for effective noise isolation.

Original language	English
Title of host publication	2010 IEEE 19th Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS 2010
Publisher	IEEE Computer Society
Pages	269-272
Number of pages	4
ISBN (Print)	9781424468652
DOIs	https://doi.org/10.1109/EPEPS.2010.5642590
State	Published - 2010

Publication series

Name	2010 IEEE 19th Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS 2010

Keywords

Coupling suppression
Guard ring
Noise coupling
Shielding structure
Shielding TSV
Through silicon via (TSV)
TSV-TSV coupling

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10.1109/EPEPS.2010.5642590

Cite this

Cho, J., Kim, J., Song, T., Pak, J. S., Kim, J., Lee, H., Lee, J., & Park, K. (2010). Through Silicon Via (TSV) shielding structures. In 2010 IEEE 19th Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS 2010 (pp. 269-272). Article 5642590 (2010 IEEE 19th Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS 2010). IEEE Computer Society. https://doi.org/10.1109/EPEPS.2010.5642590

@inproceedings{2c27ce4f0b5f4482a744f13867189be7,

title = "Through Silicon Via (TSV) shielding structures",

abstract = "Three different shielding structures for noise coupling suppression between through silicon vias (TSVs) are proposed in this manuscript. These structures are modeled using the 3-dimensional transmission line matrix (3D-TLM) method, and the model is verified using EM-simulation. The shielding structures are analyzed with regard to consumption area, manufacturing process compatibility, and noise isolation levels in low, mid, and high frequency ranges. Each shielding structure has unique advantages and disadvantages, and selection of an appropriate shielding structure is needed for effective noise isolation.",

keywords = "Coupling suppression, Guard ring, Noise coupling, Shielding structure, Shielding TSV, Through silicon via (TSV), TSV-TSV coupling",

author = "Jonghyun Cho and Joohee Kim and Taigon Song and Pak, {Jun So} and Joungho Kim and Hyungdong Lee and Junho Lee and Kunwoo Park",

year = "2010",

doi = "10.1109/EPEPS.2010.5642590",

language = "English",

isbn = "9781424468652",

series = "2010 IEEE 19th Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS 2010",

publisher = "IEEE Computer Society",

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booktitle = "2010 IEEE 19th Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS 2010",

address = "United States",

}

Cho, J, Kim, J, Song, T, Pak, JS, Kim, J, Lee, H, Lee, J & Park, K 2010, Through Silicon Via (TSV) shielding structures. in 2010 IEEE 19th Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS 2010., 5642590, 2010 IEEE 19th Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS 2010, IEEE Computer Society, pp. 269-272. https://doi.org/10.1109/EPEPS.2010.5642590

Through Silicon Via (TSV) shielding structures. / Cho, Jonghyun; Kim, Joohee; Song, Taigon et al.
2010 IEEE 19th Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS 2010. IEEE Computer Society, 2010. p. 269-272 5642590 (2010 IEEE 19th Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS 2010).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Through Silicon Via (TSV) shielding structures

AU - Cho, Jonghyun

AU - Kim, Joohee

AU - Song, Taigon

AU - Pak, Jun So

AU - Kim, Joungho

AU - Lee, Hyungdong

AU - Lee, Junho

AU - Park, Kunwoo

PY - 2010

Y1 - 2010

N2 - Three different shielding structures for noise coupling suppression between through silicon vias (TSVs) are proposed in this manuscript. These structures are modeled using the 3-dimensional transmission line matrix (3D-TLM) method, and the model is verified using EM-simulation. The shielding structures are analyzed with regard to consumption area, manufacturing process compatibility, and noise isolation levels in low, mid, and high frequency ranges. Each shielding structure has unique advantages and disadvantages, and selection of an appropriate shielding structure is needed for effective noise isolation.

AB - Three different shielding structures for noise coupling suppression between through silicon vias (TSVs) are proposed in this manuscript. These structures are modeled using the 3-dimensional transmission line matrix (3D-TLM) method, and the model is verified using EM-simulation. The shielding structures are analyzed with regard to consumption area, manufacturing process compatibility, and noise isolation levels in low, mid, and high frequency ranges. Each shielding structure has unique advantages and disadvantages, and selection of an appropriate shielding structure is needed for effective noise isolation.

KW - Coupling suppression

KW - Guard ring

KW - Noise coupling

KW - Shielding structure

KW - Shielding TSV

KW - Through silicon via (TSV)

KW - TSV-TSV coupling

UR - http://www.scopus.com/inward/record.url?scp=78650960452&partnerID=8YFLogxK

U2 - 10.1109/EPEPS.2010.5642590

DO - 10.1109/EPEPS.2010.5642590

M3 - Conference contribution

AN - SCOPUS:78650960452

SN - 9781424468652

T3 - 2010 IEEE 19th Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS 2010

SP - 269

EP - 272

BT - 2010 IEEE 19th Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS 2010

PB - IEEE Computer Society

ER -

Cho J, Kim J, Song T, Pak JS, Kim J, Lee H et al. Through Silicon Via (TSV) shielding structures. In 2010 IEEE 19th Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS 2010. IEEE Computer Society. 2010. p. 269-272. 5642590. (2010 IEEE 19th Conference on Electrical Performance of Electronic Packaging and Systems, EPEPS 2010). doi: 10.1109/EPEPS.2010.5642590

Through Silicon Via (TSV) shielding structures

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