TiOx-Based RRAM Synapse With 64-Levels of Conductance and Symmetric Conductance Change by Adopting a Hybrid Pulse Scheme for Neuromorphic Computing

Jaesung Park; Myunghoon Kwak; Kibong Moon; Jiyong Woo; Dongwook Lee; Hyunsang Hwang

doi:10.1109/LED.2016.2622716

TiO_x-Based RRAM Synapse With 64-Levels of Conductance and Symmetric Conductance Change by Adopting a Hybrid Pulse Scheme for Neuromorphic Computing

Jaesung Park, Myunghoon Kwak, Kibong Moon, Jiyong Woo, Dongwook Lee, Hyunsang Hwang

School of Electronics Engineering

Pohang University of Science and Technology

Research output: Contribution to journal › Article › peer-review

202 Scopus citations

Abstract

We propose TiO_x-based resistive switching device for neuromorphic synapse applications. This device is capable of 64-levels conductance states because of their optimized interface between the metal electrode and the TiO_x film. To compensate the change in switching power with increasing pulse number, we propose the use of fixed voltage and current pulses in potentiation and depression conditions, respectively. By adopting a hybrid pulse scheme, the symmetry of conductance change under both potentiation and depression conditions is shown to be significantly improved. Both the improved conductance levels and the symmetry of conductance change are directly related with enhanced pattern recognition accuracy, which is confirmed by a neural network simulation.

Original language	English
Article number	7725546
Pages (from-to)	1559-1562
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	37
Issue number	12
DOIs	https://doi.org/10.1109/LED.2016.2622716
State	Published - Dec 2016

Keywords

Neuromorphic computing
resistive RAM
synaptic devices
Tiox

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10.1109/LED.2016.2622716

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title = "TiOx-Based RRAM Synapse With 64-Levels of Conductance and Symmetric Conductance Change by Adopting a Hybrid Pulse Scheme for Neuromorphic Computing",

abstract = "We propose TiOx-based resistive switching device for neuromorphic synapse applications. This device is capable of 64-levels conductance states because of their optimized interface between the metal electrode and the TiOx film. To compensate the change in switching power with increasing pulse number, we propose the use of fixed voltage and current pulses in potentiation and depression conditions, respectively. By adopting a hybrid pulse scheme, the symmetry of conductance change under both potentiation and depression conditions is shown to be significantly improved. Both the improved conductance levels and the symmetry of conductance change are directly related with enhanced pattern recognition accuracy, which is confirmed by a neural network simulation.",

keywords = "Neuromorphic computing, resistive RAM, synaptic devices, Tiox",

author = "Jaesung Park and Myunghoon Kwak and Kibong Moon and Jiyong Woo and Dongwook Lee and Hyunsang Hwang",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.",

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AU - Park, Jaesung

AU - Kwak, Myunghoon

AU - Moon, Kibong

AU - Woo, Jiyong

AU - Lee, Dongwook

AU - Hwang, Hyunsang

PY - 2016/12

Y1 - 2016/12

N2 - We propose TiOx-based resistive switching device for neuromorphic synapse applications. This device is capable of 64-levels conductance states because of their optimized interface between the metal electrode and the TiOx film. To compensate the change in switching power with increasing pulse number, we propose the use of fixed voltage and current pulses in potentiation and depression conditions, respectively. By adopting a hybrid pulse scheme, the symmetry of conductance change under both potentiation and depression conditions is shown to be significantly improved. Both the improved conductance levels and the symmetry of conductance change are directly related with enhanced pattern recognition accuracy, which is confirmed by a neural network simulation.

AB - We propose TiOx-based resistive switching device for neuromorphic synapse applications. This device is capable of 64-levels conductance states because of their optimized interface between the metal electrode and the TiOx film. To compensate the change in switching power with increasing pulse number, we propose the use of fixed voltage and current pulses in potentiation and depression conditions, respectively. By adopting a hybrid pulse scheme, the symmetry of conductance change under both potentiation and depression conditions is shown to be significantly improved. Both the improved conductance levels and the symmetry of conductance change are directly related with enhanced pattern recognition accuracy, which is confirmed by a neural network simulation.

KW - Neuromorphic computing

KW - resistive RAM

KW - synaptic devices

KW - Tiox

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TiO_x-Based RRAM Synapse With 64-Levels of Conductance and Symmetric Conductance Change by Adopting a Hybrid Pulse Scheme for Neuromorphic Computing

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