Tip traveling and grain boundary effects in domain formation using piezoelectric force microscopy for probe storage applications

Yunseok Kim; Youngsang Cho; Seungbum Hong; Simon Bühlmann; Hongsik Park; Dong Ki Min; Seung Hyun Kim; Kwangsoo No

doi:10.1063/1.2370502

Tip traveling and grain boundary effects in domain formation using piezoelectric force microscopy for probe storage applications

Yunseok Kim, Youngsang Cho, Seungbum Hong, Simon Bühlmann, Hongsik Park, Dong Ki Min, Seung Hyun Kim, Kwangsoo No

School of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

Tip traveling and grain boundary effects have been investigated by varying the voltage pulse width on Pb (Zr0.25 Ti0.75) O3 films using piezoelectric force microscopy. Depending on pulse width, the authors distinguish three regions of domain formation. It was found that grain boundaries act as electric shield, which prevents domain growth across grains. Domain growth across grains was mainly due to the tip traveling effect. Calculations based on the authors' model matched well with experimental data.

Original language	English
Article number	172909
Journal	Applied Physics Letters
Volume	89
Issue number	17
DOIs	https://doi.org/10.1063/1.2370502
State	Published - 2006

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title = "Tip traveling and grain boundary effects in domain formation using piezoelectric force microscopy for probe storage applications",

abstract = "Tip traveling and grain boundary effects have been investigated by varying the voltage pulse width on Pb (Zr0.25 Ti0.75) O3 films using piezoelectric force microscopy. Depending on pulse width, the authors distinguish three regions of domain formation. It was found that grain boundaries act as electric shield, which prevents domain growth across grains. Domain growth across grains was mainly due to the tip traveling effect. Calculations based on the authors' model matched well with experimental data.",

author = "Yunseok Kim and Youngsang Cho and Seungbum Hong and Simon B{\"u}hlmann and Hongsik Park and Min, \{Dong Ki\} and Kim, \{Seung Hyun\} and Kwangsoo No",

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T1 - Tip traveling and grain boundary effects in domain formation using piezoelectric force microscopy for probe storage applications

AU - Kim, Yunseok

AU - Cho, Youngsang

AU - Hong, Seungbum

AU - Bühlmann, Simon

AU - Park, Hongsik

AU - Min, Dong Ki

AU - Kim, Seung Hyun

AU - No, Kwangsoo

PY - 2006

Y1 - 2006

N2 - Tip traveling and grain boundary effects have been investigated by varying the voltage pulse width on Pb (Zr0.25 Ti0.75) O3 films using piezoelectric force microscopy. Depending on pulse width, the authors distinguish three regions of domain formation. It was found that grain boundaries act as electric shield, which prevents domain growth across grains. Domain growth across grains was mainly due to the tip traveling effect. Calculations based on the authors' model matched well with experimental data.

AB - Tip traveling and grain boundary effects have been investigated by varying the voltage pulse width on Pb (Zr0.25 Ti0.75) O3 films using piezoelectric force microscopy. Depending on pulse width, the authors distinguish three regions of domain formation. It was found that grain boundaries act as electric shield, which prevents domain growth across grains. Domain growth across grains was mainly due to the tip traveling effect. Calculations based on the authors' model matched well with experimental data.

UR - https://www.scopus.com/pages/publications/33750485318

U2 - 10.1063/1.2370502

DO - 10.1063/1.2370502

M3 - Article

AN - SCOPUS:33750485318

SN - 0003-6951

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

M1 - 172909

ER -

Tip traveling and grain boundary effects in domain formation using piezoelectric force microscopy for probe storage applications

Abstract

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