Transfer printing of poly(vinylidene fluoride-trifluoroethylene) films for low-voltage ferroelectric field-effect transistors

We report a viable method for localizing a ferroelectric poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] film by using the transfer-print process. Micro-scaled topographic P(VDF-TrFE) patterns were successfully produced by using the transfer-print method, and the transferred films exhibited inherent ferroelectric properties. The characteristic improvements in the ferroelectric field-effect transistors (FeFETs) with respect to the operation voltage and the field-effect mobility could be achieved by using the transfer-print method to fabricate a ferroelectric insulator. The results suggest that transferring a ferroelectric film would be useful for realizing high-performance nonvolatile memory devices composed of FeFETs.