Transition metal doped TiO2 thin films epitaxially grown by reactive sputter deposition

B. S. Jeong; Y. W. Heo; J. D. Budai; Y. D. Park; D. P. Norton

Transition metal doped TiO₂ thin films epitaxially grown by reactive sputter deposition

B. S. Jeong, Y. W. Heo, J. D. Budai, Y. D. Park, D. P. Norton

Research output: Contribution to conference › Paper › peer-review

Abstract

In recent years, ferromagnetic semiconductors have been extensively explored as potential candidates for spin injection in spin electronic devices operating at room temperature. In this report, transition metal(TM) doped TiO₂ thin films were epitaxially grown by reactive magnetron sputtering. X-ray diffraction pattern indicates that these TM doped thin films are single crystal-like anatase films. Field emission SEM shows that surface segregation of Co was observed in the film for the 7 at% Co-doped TiO ₂ anatase films. The resistivity and carrier concentration for Co_0.07Ti_0.93O₂ was 7.18Ω-cm and 8.09×10¹⁷. This semiconductor material was N-type. The hysteresis of this material shows the strong ferromagnetic behavior at room temperature.

Original language	English
Pages	224-239
Number of pages	16
State	Published - 2005
Event	Epitaxial Growth of Functional Oxides - Proceedings of the International Symposium - Orlando, FL, United States Duration: 12 Oct 2003 → 17 Oct 2003

Conference

Conference	Epitaxial Growth of Functional Oxides - Proceedings of the International Symposium
Country/Territory	United States
City	Orlando, FL
Period	12/10/03 → 17/10/03

Cite this

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title = "Transition metal doped TiO2 thin films epitaxially grown by reactive sputter deposition",

abstract = "In recent years, ferromagnetic semiconductors have been extensively explored as potential candidates for spin injection in spin electronic devices operating at room temperature. In this report, transition metal(TM) doped TiO2 thin films were epitaxially grown by reactive magnetron sputtering. X-ray diffraction pattern indicates that these TM doped thin films are single crystal-like anatase films. Field emission SEM shows that surface segregation of Co was observed in the film for the 7 at% Co-doped TiO 2 anatase films. The resistivity and carrier concentration for Co0.07Ti0.93O2 was 7.18Ω-cm and 8.09×1017. This semiconductor material was N-type. The hysteresis of this material shows the strong ferromagnetic behavior at room temperature.",

author = "Jeong, {B. S.} and Heo, {Y. W.} and Budai, {J. D.} and Park, {Y. D.} and Norton, {D. P.}",

year = "2005",

language = "English",

pages = "224--239",

note = "Epitaxial Growth of Functional Oxides - Proceedings of the International Symposium ; Conference date: 12-10-2003 Through 17-10-2003",

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TY - CONF

T1 - Transition metal doped TiO2 thin films epitaxially grown by reactive sputter deposition

AU - Jeong, B. S.

AU - Heo, Y. W.

AU - Budai, J. D.

AU - Park, Y. D.

AU - Norton, D. P.

PY - 2005

Y1 - 2005

N2 - In recent years, ferromagnetic semiconductors have been extensively explored as potential candidates for spin injection in spin electronic devices operating at room temperature. In this report, transition metal(TM) doped TiO2 thin films were epitaxially grown by reactive magnetron sputtering. X-ray diffraction pattern indicates that these TM doped thin films are single crystal-like anatase films. Field emission SEM shows that surface segregation of Co was observed in the film for the 7 at% Co-doped TiO 2 anatase films. The resistivity and carrier concentration for Co0.07Ti0.93O2 was 7.18Ω-cm and 8.09×1017. This semiconductor material was N-type. The hysteresis of this material shows the strong ferromagnetic behavior at room temperature.

AB - In recent years, ferromagnetic semiconductors have been extensively explored as potential candidates for spin injection in spin electronic devices operating at room temperature. In this report, transition metal(TM) doped TiO2 thin films were epitaxially grown by reactive magnetron sputtering. X-ray diffraction pattern indicates that these TM doped thin films are single crystal-like anatase films. Field emission SEM shows that surface segregation of Co was observed in the film for the 7 at% Co-doped TiO 2 anatase films. The resistivity and carrier concentration for Co0.07Ti0.93O2 was 7.18Ω-cm and 8.09×1017. This semiconductor material was N-type. The hysteresis of this material shows the strong ferromagnetic behavior at room temperature.

UR - http://www.scopus.com/inward/record.url?scp=28544441148&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:28544441148

SP - 224

EP - 239

T2 - Epitaxial Growth of Functional Oxides - Proceedings of the International Symposium

Y2 - 12 October 2003 through 17 October 2003

ER -

Transition metal doped TiO₂ thin films epitaxially grown by reactive sputter deposition

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