Transparent high-performance thin film transistors from solution-processed SnO2/ZrO2 gel-like precursors

Jaewon Jang; Rungrot Kitsomboonloha; Sarah L. Swisher; Eung Seok Park; Hongki Kang; Vivek Subramanian

doi:10.1002/adma.201202997

Transparent high-performance thin film transistors from solution-processed SnO₂/ZrO₂ gel-like precursors

Jaewon Jang, Rungrot Kitsomboonloha, Sarah L. Swisher, Eung Seok Park, Hongki Kang, Vivek Subramanian

School of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

149 Scopus citations

Abstract

This work employs novel SnO₂ gel-like precursors in conjunction with sol-gel deposited ZrO₂ gate dielectrics to realize high-performance transparent transistors. Representative devices show excellent performance and transparency, and deliver mobility of 103 cm² V ^-1 s^-1 in saturation at operation voltages as low as 2 V, a sub-threshold swing of only 0.3 V/decade, and I_on/I_off of 10⁴∼10⁵.

Original language	English
Pages (from-to)	1042-1047
Number of pages	6
Journal	Advanced Materials
Volume	25
Issue number	7
DOIs	https://doi.org/10.1002/adma.201202997
State	Published - 20 Feb 2013

Keywords

metal oxides
sol-gel process
solution process
thin film transistors
transparent

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@article{f697f7270946469c8476240031830b75,

title = "Transparent high-performance thin film transistors from solution-processed SnO2/ZrO2 gel-like precursors",

abstract = "This work employs novel SnO2 gel-like precursors in conjunction with sol-gel deposited ZrO2 gate dielectrics to realize high-performance transparent transistors. Representative devices show excellent performance and transparency, and deliver mobility of 103 cm2 V -1 s-1 in saturation at operation voltages as low as 2 V, a sub-threshold swing of only 0.3 V/decade, and Ion/Ioff of 104∼105.",

keywords = "metal oxides, sol-gel process, solution process, thin film transistors, transparent",

author = "Jaewon Jang and Rungrot Kitsomboonloha and Swisher, {Sarah L.} and Park, {Eung Seok} and Hongki Kang and Vivek Subramanian",

year = "2013",

month = feb,

day = "20",

doi = "10.1002/adma.201202997",

language = "English",

volume = "25",

pages = "1042--1047",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-Blackwell",

number = "7",

}

TY - JOUR

T1 - Transparent high-performance thin film transistors from solution-processed SnO2/ZrO2 gel-like precursors

AU - Jang, Jaewon

AU - Kitsomboonloha, Rungrot

AU - Swisher, Sarah L.

AU - Park, Eung Seok

AU - Kang, Hongki

AU - Subramanian, Vivek

PY - 2013/2/20

Y1 - 2013/2/20

N2 - This work employs novel SnO2 gel-like precursors in conjunction with sol-gel deposited ZrO2 gate dielectrics to realize high-performance transparent transistors. Representative devices show excellent performance and transparency, and deliver mobility of 103 cm2 V -1 s-1 in saturation at operation voltages as low as 2 V, a sub-threshold swing of only 0.3 V/decade, and Ion/Ioff of 104∼105.

AB - This work employs novel SnO2 gel-like precursors in conjunction with sol-gel deposited ZrO2 gate dielectrics to realize high-performance transparent transistors. Representative devices show excellent performance and transparency, and deliver mobility of 103 cm2 V -1 s-1 in saturation at operation voltages as low as 2 V, a sub-threshold swing of only 0.3 V/decade, and Ion/Ioff of 104∼105.

KW - metal oxides

KW - sol-gel process

KW - solution process

KW - thin film transistors

KW - transparent

UR - http://www.scopus.com/inward/record.url?scp=84874065016&partnerID=8YFLogxK

U2 - 10.1002/adma.201202997

DO - 10.1002/adma.201202997

M3 - Article

AN - SCOPUS:84874065016

SN - 0935-9648

VL - 25

SP - 1042

EP - 1047

JO - Advanced Materials

JF - Advanced Materials

IS - 7

ER -

Transparent high-performance thin film transistors from solution-processed SnO₂/ZrO₂ gel-like precursors

Abstract

Keywords

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