Transparent multilayer indium-zinc-oxide films deposited by DC sputtering

Jun Ho Kim; Jin Young Moon; Hyunghoon Kim; Ho Seong Lee; Hyung Koun Cho; Jong Hoon Lee; Hong Seung Klm

doi:10.3938/jkps.55.1931

Transparent multilayer indium-zinc-oxide films deposited by DC sputtering

Jun Ho Kim, Jin Young Moon, Hyunghoon Kim, Ho Seong Lee, Hyung Koun Cho, Jong Hoon Lee, Hong Seung Klm

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Transparent multilayer indium-zinc-oxide (IZO) films are designed and fabricated to achieve low- resistance and highly-transparent electrodes on glass substrates. IZO multilayers were fabricated by inserting an In203 - 90wt% ZnO (Zn-rich IZO) thin film between two layers of In₂O₃-10 wt% ZnO (In-rich IZO) thin films. The In-rich IZO/Zn-rich IZO/In-rich IZO multilayer film exhibited a low resistance of 4.6 × 10^-5 ω-cm and a high transparency of about 80 %. In comparison with IZO films without a Zn-rich IZO interlayer, the electrical and the optical properties of the IZO multilayer films are improved. After the annealing treatment, the electrical resistiviy of the multilayer films were increased due to the annihilation of oxygen vacancies or to grain boundary scattering caused by crystallization of the multilayer.

Original language	English
Pages (from-to)	1931-1935
Number of pages	5
Journal	Journal of the Korean Physical Society
Volume	55
Issue number	5 PART 1
DOIs	https://doi.org/10.3938/jkps.55.1931
State	Published - Nov 2009

Keywords

DC sputtering
Indium zinc oxide
Microstructure

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@article{a03c2e2eb6c34629b2bd3bd6c007a72b,

title = "Transparent multilayer indium-zinc-oxide films deposited by DC sputtering",

abstract = "Transparent multilayer indium-zinc-oxide (IZO) films are designed and fabricated to achieve low- resistance and highly-transparent electrodes on glass substrates. IZO multilayers were fabricated by inserting an In203 - 90wt% ZnO (Zn-rich IZO) thin film between two layers of In2O3-10 wt% ZnO (In-rich IZO) thin films. The In-rich IZO/Zn-rich IZO/In-rich IZO multilayer film exhibited a low resistance of 4.6 × 10-5 ω-cm and a high transparency of about 80 %. In comparison with IZO films without a Zn-rich IZO interlayer, the electrical and the optical properties of the IZO multilayer films are improved. After the annealing treatment, the electrical resistiviy of the multilayer films were increased due to the annihilation of oxygen vacancies or to grain boundary scattering caused by crystallization of the multilayer.",

keywords = "DC sputtering, Indium zinc oxide, Microstructure",

author = "Kim, {Jun Ho} and Moon, {Jin Young} and Hyunghoon Kim and Lee, {Ho Seong} and Cho, {Hyung Koun} and Lee, {Jong Hoon} and Klm, {Hong Seung}",

year = "2009",

month = nov,

doi = "10.3938/jkps.55.1931",

language = "English",

volume = "55",

pages = "1931--1935",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

number = "5 PART 1",

}

TY - JOUR

T1 - Transparent multilayer indium-zinc-oxide films deposited by DC sputtering

AU - Kim, Jun Ho

AU - Moon, Jin Young

AU - Kim, Hyunghoon

AU - Lee, Ho Seong

AU - Cho, Hyung Koun

AU - Lee, Jong Hoon

AU - Klm, Hong Seung

PY - 2009/11

Y1 - 2009/11

N2 - Transparent multilayer indium-zinc-oxide (IZO) films are designed and fabricated to achieve low- resistance and highly-transparent electrodes on glass substrates. IZO multilayers were fabricated by inserting an In203 - 90wt% ZnO (Zn-rich IZO) thin film between two layers of In2O3-10 wt% ZnO (In-rich IZO) thin films. The In-rich IZO/Zn-rich IZO/In-rich IZO multilayer film exhibited a low resistance of 4.6 × 10-5 ω-cm and a high transparency of about 80 %. In comparison with IZO films without a Zn-rich IZO interlayer, the electrical and the optical properties of the IZO multilayer films are improved. After the annealing treatment, the electrical resistiviy of the multilayer films were increased due to the annihilation of oxygen vacancies or to grain boundary scattering caused by crystallization of the multilayer.

AB - Transparent multilayer indium-zinc-oxide (IZO) films are designed and fabricated to achieve low- resistance and highly-transparent electrodes on glass substrates. IZO multilayers were fabricated by inserting an In203 - 90wt% ZnO (Zn-rich IZO) thin film between two layers of In2O3-10 wt% ZnO (In-rich IZO) thin films. The In-rich IZO/Zn-rich IZO/In-rich IZO multilayer film exhibited a low resistance of 4.6 × 10-5 ω-cm and a high transparency of about 80 %. In comparison with IZO films without a Zn-rich IZO interlayer, the electrical and the optical properties of the IZO multilayer films are improved. After the annealing treatment, the electrical resistiviy of the multilayer films were increased due to the annihilation of oxygen vacancies or to grain boundary scattering caused by crystallization of the multilayer.

KW - DC sputtering

KW - Indium zinc oxide

KW - Microstructure

UR - http://www.scopus.com/inward/record.url?scp=73249136249&partnerID=8YFLogxK

U2 - 10.3938/jkps.55.1931

DO - 10.3938/jkps.55.1931

M3 - Article

AN - SCOPUS:73249136249

SN - 0374-4884

VL - 55

SP - 1931

EP - 1935

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 5 PART 1

ER -

Transparent multilayer indium-zinc-oxide films deposited by DC sputtering

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Keywords

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