Transparent organic light-emitting diodes consisting of a metal oxide multilayer cathode

Seung Yoon Ryu; Joo Hyon Noh; Byoung Har Hwang; Chang Su Kim; Sung Jin Jo; Jong Tae Kim; Hyeon Seok Hwang; Hong Koo Baik; Hee Seong Jeong; Chang Ho Lee; Seung Yong Song; Seung Ho Choi; Si Young Park

doi:10.1063/1.2835044

Transparent organic light-emitting diodes consisting of a metal oxide multilayer cathode

Seung Yoon Ryu, Joo Hyon Noh, Byoung Har Hwang, Chang Su Kim, Sung Jin Jo, Jong Tae Kim, Hyeon Seok Hwang, Hong Koo Baik, Hee Seong Jeong, Chang Ho Lee, Seung Yong Song, Seung Ho Choi, Si Young Park

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Abstract

The authors have developed a semitransparent, multilayered cathode of indium tin oxide (ITO)/Ag/tungsten oxide (W O3) for transparent organic light-emitting diodes. The device showed a weak negative differential resistance (NDR), until the operating voltage of 8 V was reached. NDR was due to the resonant tunneling by both the quantum barrier and quantum well. The silver oxide (Ag2 O) on the Ag metal was confirmed by x-ray photoelectron spectroscopy, and the energy levels of Ag2 O were quantized due to the quantum size effect and this produced the resonant tunneling channels. The device using ITOAgW O3 with a LiFAl bilayer was superior to those devices which only used ITO or W O3, mainly because the out coupling was enhanced by employing a W O3 material, which is much more transparent than ITO.

Original language	English
Article number	023306
Journal	Applied Physics Letters
Volume	92
Issue number	2
DOIs	https://doi.org/10.1063/1.2835044
State	Published - 2008

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title = "Transparent organic light-emitting diodes consisting of a metal oxide multilayer cathode",

abstract = "The authors have developed a semitransparent, multilayered cathode of indium tin oxide (ITO)/Ag/tungsten oxide (W O3) for transparent organic light-emitting diodes. The device showed a weak negative differential resistance (NDR), until the operating voltage of 8 V was reached. NDR was due to the resonant tunneling by both the quantum barrier and quantum well. The silver oxide (Ag2 O) on the Ag metal was confirmed by x-ray photoelectron spectroscopy, and the energy levels of Ag2 O were quantized due to the quantum size effect and this produced the resonant tunneling channels. The device using ITOAgW O3 with a LiFAl bilayer was superior to those devices which only used ITO or W O3, mainly because the out coupling was enhanced by employing a W O3 material, which is much more transparent than ITO.",

author = "Ryu, {Seung Yoon} and Noh, {Joo Hyon} and Hwang, {Byoung Har} and Kim, {Chang Su} and Jo, {Sung Jin} and Kim, {Jong Tae} and Hwang, {Hyeon Seok} and Baik, {Hong Koo} and Jeong, {Hee Seong} and Lee, {Chang Ho} and Song, {Seung Yong} and Choi, {Seung Ho} and Park, {Si Young}",

year = "2008",

doi = "10.1063/1.2835044",

language = "English",

volume = "92",

journal = "Applied Physics Letters",

issn = "0003-6951",

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T1 - Transparent organic light-emitting diodes consisting of a metal oxide multilayer cathode

AU - Ryu, Seung Yoon

AU - Noh, Joo Hyon

AU - Hwang, Byoung Har

AU - Kim, Chang Su

AU - Jo, Sung Jin

AU - Kim, Jong Tae

AU - Hwang, Hyeon Seok

AU - Baik, Hong Koo

AU - Jeong, Hee Seong

AU - Lee, Chang Ho

AU - Song, Seung Yong

AU - Choi, Seung Ho

AU - Park, Si Young

PY - 2008

Y1 - 2008

N2 - The authors have developed a semitransparent, multilayered cathode of indium tin oxide (ITO)/Ag/tungsten oxide (W O3) for transparent organic light-emitting diodes. The device showed a weak negative differential resistance (NDR), until the operating voltage of 8 V was reached. NDR was due to the resonant tunneling by both the quantum barrier and quantum well. The silver oxide (Ag2 O) on the Ag metal was confirmed by x-ray photoelectron spectroscopy, and the energy levels of Ag2 O were quantized due to the quantum size effect and this produced the resonant tunneling channels. The device using ITOAgW O3 with a LiFAl bilayer was superior to those devices which only used ITO or W O3, mainly because the out coupling was enhanced by employing a W O3 material, which is much more transparent than ITO.

AB - The authors have developed a semitransparent, multilayered cathode of indium tin oxide (ITO)/Ag/tungsten oxide (W O3) for transparent organic light-emitting diodes. The device showed a weak negative differential resistance (NDR), until the operating voltage of 8 V was reached. NDR was due to the resonant tunneling by both the quantum barrier and quantum well. The silver oxide (Ag2 O) on the Ag metal was confirmed by x-ray photoelectron spectroscopy, and the energy levels of Ag2 O were quantized due to the quantum size effect and this produced the resonant tunneling channels. The device using ITOAgW O3 with a LiFAl bilayer was superior to those devices which only used ITO or W O3, mainly because the out coupling was enhanced by employing a W O3 material, which is much more transparent than ITO.

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U2 - 10.1063/1.2835044

DO - 10.1063/1.2835044

M3 - Article

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SN - 0003-6951

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

M1 - 023306

ER -

Transparent organic light-emitting diodes consisting of a metal oxide multilayer cathode

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