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Transparent transistors based on semiconducting oxides
Y. W. Kwon
, Y. Li
,
Y. W. Heo
, M. Jones
, Vijay
,
B. S. Jeong
, J. Zhou
, S. Li
, P. Holloway
, D. P. Norton
Advanced Materials Research Institute
Department of Advanced Materials Science and Engineering
Innovative Semiconductor Education and Research Center for Future Mobility
Research Institute of Advanced Energy Technology
University of Florida
Research output
:
Contribution to journal
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Conference article
›
peer-review
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Material Science
Oxide Compound
100%
Transistor
100%
Thin-Film Transistor
75%
ZnO
75%
Density
50%
Dielectric Material
25%
Amorphous Material
25%
Mechanical Strength
25%
Pulsed Laser Deposition
25%
Capacitance
25%
Indium Tin Oxide
25%
Field Effect Transistor
25%
Engineering
Thin-Film Transistor
100%
Dielectric Strength
33%
Indium-Tin-Oxide
33%
Field-Effect Transistor
33%
Pulsed Laser
33%
Active Layer
33%
Charge Density
33%
Channel Conductance
33%
Gate Oxide
33%