Transport properties of p -type phosphorus-doped (Zn,Mg)O grown by pulsed-laser deposition

Y. J. Li; Y. W. Heo; Y. Kwon; K. Ip; S. J. Pearton; D. P. Norton

doi:10.1063/1.2010600

Transport properties of p -type phosphorus-doped (Zn,Mg)O grown by pulsed-laser deposition

Y. J. Li, Y. W. Heo, Y. Kwon, K. Ip, S. J. Pearton, D. P. Norton

University of Florida

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Abstract

We report on carrier type in phosphorus-doped (Zn,Mg)O films grown by pulsed-laser deposition under a broad range of conditions. For film growth at 500 °C, increasing the oxygen partial pressure from 20 to 200 mTorr yielded a carrier type conversion from n to p type. Transport characteristics of as-grown P-doped (Zn,Mg)O films were determined by Hall-effect measurements at room temperature. The P-doped (Zn,Mg)O films grown at 150 mTorr oxygen partial pressure were marginally p type and exhibited a hole concentration of 2.7× 1016 cm-3, a mobility of 8.2 cm2 V s, and a resistivity of 35 Ω cm. The films exhibited good crystallinity with c -axis orientation. These results indicate the importance of oxidation conditions in realizing p -type (Zn,Mg)O films.

Original language	English
Article number	072101
Journal	Applied Physics Letters
Volume	87
Issue number	7
DOIs	https://doi.org/10.1063/1.2010600
State	Published - 15 Aug 2005

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title = "Transport properties of p -type phosphorus-doped (Zn,Mg)O grown by pulsed-laser deposition",

abstract = "We report on carrier type in phosphorus-doped (Zn,Mg)O films grown by pulsed-laser deposition under a broad range of conditions. For film growth at 500 °C, increasing the oxygen partial pressure from 20 to 200 mTorr yielded a carrier type conversion from n to p type. Transport characteristics of as-grown P-doped (Zn,Mg)O films were determined by Hall-effect measurements at room temperature. The P-doped (Zn,Mg)O films grown at 150 mTorr oxygen partial pressure were marginally p type and exhibited a hole concentration of 2.7× 1016 cm-3, a mobility of 8.2 cm2 V s, and a resistivity of 35 Ω cm. The films exhibited good crystallinity with c -axis orientation. These results indicate the importance of oxidation conditions in realizing p -type (Zn,Mg)O films.",

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T1 - Transport properties of p -type phosphorus-doped (Zn,Mg)O grown by pulsed-laser deposition

AU - Li, Y. J.

AU - Heo, Y. W.

AU - Kwon, Y.

AU - Ip, K.

AU - Pearton, S. J.

AU - Norton, D. P.

PY - 2005/8/15

Y1 - 2005/8/15

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AB - We report on carrier type in phosphorus-doped (Zn,Mg)O films grown by pulsed-laser deposition under a broad range of conditions. For film growth at 500 °C, increasing the oxygen partial pressure from 20 to 200 mTorr yielded a carrier type conversion from n to p type. Transport characteristics of as-grown P-doped (Zn,Mg)O films were determined by Hall-effect measurements at room temperature. The P-doped (Zn,Mg)O films grown at 150 mTorr oxygen partial pressure were marginally p type and exhibited a hole concentration of 2.7× 1016 cm-3, a mobility of 8.2 cm2 V s, and a resistivity of 35 Ω cm. The films exhibited good crystallinity with c -axis orientation. These results indicate the importance of oxidation conditions in realizing p -type (Zn,Mg)O films.

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Transport properties of p -type phosphorus-doped (Zn,Mg)O grown by pulsed-laser deposition

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