Transport properties of phosphorus-doped ZnO thin films

Y. W. Heo; S. J. Park; K. Ip; S. J. Pearton; D. P. Norton

doi:10.1063/1.1594835

Transport properties of phosphorus-doped ZnO thin films

Y. W. Heo, S. J. Park, K. Ip, S. J. Pearton, D. P. Norton

University of Florida

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162 Scopus citations

Abstract

Transport properties of phosphorus-doped ZnO thin films were examined. The origin of the shallow donor level appeared to be either substitution of P on the Zn site or formation of a donor complex. The results indicated that the phosphorus-related donor defect was relatively unstable and suggested the formation of a deep level upon annealing.

Original language	English
Pages (from-to)	1128-1130
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	6
DOIs	https://doi.org/10.1063/1.1594835
State	Published - 11 Aug 2003

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title = "Transport properties of phosphorus-doped ZnO thin films",

abstract = "Transport properties of phosphorus-doped ZnO thin films were examined. The origin of the shallow donor level appeared to be either substitution of P on the Zn site or formation of a donor complex. The results indicated that the phosphorus-related donor defect was relatively unstable and suggested the formation of a deep level upon annealing.",

author = "Heo, {Y. W.} and Park, {S. J.} and K. Ip and Pearton, {S. J.} and Norton, {D. P.}",

year = "2003",

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T1 - Transport properties of phosphorus-doped ZnO thin films

AU - Heo, Y. W.

AU - Park, S. J.

AU - Ip, K.

AU - Pearton, S. J.

AU - Norton, D. P.

PY - 2003/8/11

Y1 - 2003/8/11

N2 - Transport properties of phosphorus-doped ZnO thin films were examined. The origin of the shallow donor level appeared to be either substitution of P on the Zn site or formation of a donor complex. The results indicated that the phosphorus-related donor defect was relatively unstable and suggested the formation of a deep level upon annealing.

AB - Transport properties of phosphorus-doped ZnO thin films were examined. The origin of the shallow donor level appeared to be either substitution of P on the Zn site or formation of a donor complex. The results indicated that the phosphorus-related donor defect was relatively unstable and suggested the formation of a deep level upon annealing.

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U2 - 10.1063/1.1594835

DO - 10.1063/1.1594835

M3 - Article

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SP - 1128

EP - 1130

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

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Transport properties of phosphorus-doped ZnO thin films

Abstract

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