Transverse mode control by etch-depth tuning in 1120-nm GaInAs/GaAs photonic crystal vertical-cavity surface-emitting lasers

Jong Hwa Baek; Dae Sung Song; In Kag Hwang; Kum Hee Lee; Y. H. Lee; Young Gu Ju; Takashi Kondo; Tomoyuki Miyamoto; Fumio Koyama

doi:10.1364/OPEX.12.000859

Transverse mode control by etch-depth tuning in 1120-nm GaInAs/GaAs photonic crystal vertical-cavity surface-emitting lasers

Jong Hwa Baek, Dae Sung Song, In Kag Hwang, Kum Hee Lee, Y. H. Lee, Young Gu Ju, Takashi Kondo, Tomoyuki Miyamoto, Fumio Koyama

Department of Physics Education

Research output: Contribution to journal › Article › peer-review

40 Scopus citations

Abstract

Robust and tolerant single-transverse-mode photonic crystal GaInAs vertical-cavity surface-emitting lasers are fabricated and investigated. Triangular lattice patterns of rectangular air holes of various etch-depths are introduced in the top mirror. The stable single-transverse-mode operation is observed with a large margin of allowance in the etch depth (t = 2.5 ± 0.6 μm). This stable mode selection mechanism is explained by the mode competition between the two lowest photonic crystal guided modes that are influenced by both the index guiding effect and the etch-depth dependent modal losses.

Original language	English
Pages (from-to)	859-867
Number of pages	9
Journal	Optics Express
Volume	12
Issue number	5
DOIs	https://doi.org/10.1364/OPEX.12.000859
State	Published - Mar 2004

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@article{a7a55b741850480f86c031db317cedb1,

title = "Transverse mode control by etch-depth tuning in 1120-nm GaInAs/GaAs photonic crystal vertical-cavity surface-emitting lasers",

abstract = "Robust and tolerant single-transverse-mode photonic crystal GaInAs vertical-cavity surface-emitting lasers are fabricated and investigated. Triangular lattice patterns of rectangular air holes of various etch-depths are introduced in the top mirror. The stable single-transverse-mode operation is observed with a large margin of allowance in the etch depth (t = 2.5 ± 0.6 μm). This stable mode selection mechanism is explained by the mode competition between the two lowest photonic crystal guided modes that are influenced by both the index guiding effect and the etch-depth dependent modal losses.",

author = "Baek, {Jong Hwa} and Song, {Dae Sung} and Hwang, {In Kag} and Lee, {Kum Hee} and Lee, {Y. H.} and Ju, {Young Gu} and Takashi Kondo and Tomoyuki Miyamoto and Fumio Koyama",

year = "2004",

month = mar,

doi = "10.1364/OPEX.12.000859",

language = "English",

volume = "12",

pages = "859--867",

journal = "Optics Express",

issn = "1094-4087",

publisher = "Optica Publishing Group",

number = "5",

}

TY - JOUR

T1 - Transverse mode control by etch-depth tuning in 1120-nm GaInAs/GaAs photonic crystal vertical-cavity surface-emitting lasers

AU - Baek, Jong Hwa

AU - Song, Dae Sung

AU - Hwang, In Kag

AU - Lee, Kum Hee

AU - Lee, Y. H.

AU - Ju, Young Gu

AU - Kondo, Takashi

AU - Miyamoto, Tomoyuki

AU - Koyama, Fumio

PY - 2004/3

Y1 - 2004/3

N2 - Robust and tolerant single-transverse-mode photonic crystal GaInAs vertical-cavity surface-emitting lasers are fabricated and investigated. Triangular lattice patterns of rectangular air holes of various etch-depths are introduced in the top mirror. The stable single-transverse-mode operation is observed with a large margin of allowance in the etch depth (t = 2.5 ± 0.6 μm). This stable mode selection mechanism is explained by the mode competition between the two lowest photonic crystal guided modes that are influenced by both the index guiding effect and the etch-depth dependent modal losses.

AB - Robust and tolerant single-transverse-mode photonic crystal GaInAs vertical-cavity surface-emitting lasers are fabricated and investigated. Triangular lattice patterns of rectangular air holes of various etch-depths are introduced in the top mirror. The stable single-transverse-mode operation is observed with a large margin of allowance in the etch depth (t = 2.5 ± 0.6 μm). This stable mode selection mechanism is explained by the mode competition between the two lowest photonic crystal guided modes that are influenced by both the index guiding effect and the etch-depth dependent modal losses.

UR - http://www.scopus.com/inward/record.url?scp=2942724531&partnerID=8YFLogxK

U2 - 10.1364/OPEX.12.000859

DO - 10.1364/OPEX.12.000859

M3 - Article

AN - SCOPUS:2942724531

SN - 1094-4087

VL - 12

SP - 859

EP - 867

JO - Optics Express

JF - Optics Express

IS - 5

ER -

Transverse mode control by etch-depth tuning in 1120-nm GaInAs/GaAs photonic crystal vertical-cavity surface-emitting lasers

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