| Original language | Korean |
|---|---|
| Journal | 센서학회지 |
| State | Published - 2018 |
Trap-related Electrical Properties of GaN MOSFETs Through TCAD Simulation
Research output: Contribution to journal › Article › peer-review
Research output: Contribution to journal › Article › peer-review
| Original language | Korean |
|---|---|
| Journal | 센서학회지 |
| State | Published - 2018 |