Triple VTe2/graphene/VTe2 heterostructures as perspective magnetic tunnel junctions

Lyudmila V. Begunovich; Artem V. Kuklin; Maxim A. Visotin; Alexander A. Kuzubov; Felix N. Tomilin; Anton S. Tarasov; Yuri G. Mikhalev; Pavel V. Avramov

doi:10.1016/j.apsusc.2020.145315

Triple VTe₂/graphene/VTe₂ heterostructures as perspective magnetic tunnel junctions

Lyudmila V. Begunovich, Artem V. Kuklin, Maxim A. Visotin, Alexander A. Kuzubov, Felix N. Tomilin, Anton S. Tarasov, Yuri G. Mikhalev, Pavel V. Avramov

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

New perspective 1.4 nm thick spin-polarized triple heterostructures based on graphene sandwiched between two vanadium ditelluride monolayers (VTe₂/graphene/VTe₂) were studied using ab initio DFT technique. Both possible trigonal prismatic (H-VTe₂) and octahedral (T-VTe₂) VTe₂ phases were considered to design and study graphene-based heterostructures. It was shown that the interaction with graphene changes the electronic structure of 2D T-VTe₂ from metallic to half-metallic, making T phase perspective to be used for magnetic tunnel junctions. The electronic subsystem of graphene fragment is slightly hole doped. Calculated tunnel magnetoresistance ratio for the favorable heterostructure configuration estimated within the Julliere model is 220%, which opens a way to use VTe₂/graphene/VTe₂ as prospective magnetic tunnel junction in novel spintronic nanodevices based on tunnel magnetic resistance and spin transfer torque effects.

Original language	English
Article number	145315
Journal	Applied Surface Science
Volume	510
DOIs	https://doi.org/10.1016/j.apsusc.2020.145315
State	Published - 30 Apr 2020

Keywords

Density functional theory
Graphene
Magnetic tunnel junction
Transition metal dichalcogenides
Vanadium ditelluride monolayer

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10.1016/j.apsusc.2020.145315

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@article{7a4231b5f9584102b99a737bdd9d0dcb,

title = "Triple VTe2/graphene/VTe2 heterostructures as perspective magnetic tunnel junctions",

abstract = "New perspective 1.4 nm thick spin-polarized triple heterostructures based on graphene sandwiched between two vanadium ditelluride monolayers (VTe2/graphene/VTe2) were studied using ab initio DFT technique. Both possible trigonal prismatic (H-VTe2) and octahedral (T-VTe2) VTe2 phases were considered to design and study graphene-based heterostructures. It was shown that the interaction with graphene changes the electronic structure of 2D T-VTe2 from metallic to half-metallic, making T phase perspective to be used for magnetic tunnel junctions. The electronic subsystem of graphene fragment is slightly hole doped. Calculated tunnel magnetoresistance ratio for the favorable heterostructure configuration estimated within the Julliere model is 220%, which opens a way to use VTe2/graphene/VTe2 as prospective magnetic tunnel junction in novel spintronic nanodevices based on tunnel magnetic resistance and spin transfer torque effects.",

keywords = "Density functional theory, Graphene, Magnetic tunnel junction, Transition metal dichalcogenides, Vanadium ditelluride monolayer",

author = "Begunovich, {Lyudmila V.} and Kuklin, {Artem V.} and Visotin, {Maxim A.} and Kuzubov, {Alexander A.} and Tomilin, {Felix N.} and Tarasov, {Anton S.} and Mikhalev, {Yuri G.} and Avramov, {Pavel V.}",

note = "Publisher Copyright: {\textcopyright} 2020 Elsevier B.V.",

year = "2020",

month = apr,

day = "30",

doi = "10.1016/j.apsusc.2020.145315",

language = "English",

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journal = "Applied Surface Science",

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T1 - Triple VTe2/graphene/VTe2 heterostructures as perspective magnetic tunnel junctions

AU - Begunovich, Lyudmila V.

AU - Kuklin, Artem V.

AU - Visotin, Maxim A.

AU - Kuzubov, Alexander A.

AU - Tomilin, Felix N.

AU - Tarasov, Anton S.

AU - Mikhalev, Yuri G.

AU - Avramov, Pavel V.

PY - 2020/4/30

Y1 - 2020/4/30

N2 - New perspective 1.4 nm thick spin-polarized triple heterostructures based on graphene sandwiched between two vanadium ditelluride monolayers (VTe2/graphene/VTe2) were studied using ab initio DFT technique. Both possible trigonal prismatic (H-VTe2) and octahedral (T-VTe2) VTe2 phases were considered to design and study graphene-based heterostructures. It was shown that the interaction with graphene changes the electronic structure of 2D T-VTe2 from metallic to half-metallic, making T phase perspective to be used for magnetic tunnel junctions. The electronic subsystem of graphene fragment is slightly hole doped. Calculated tunnel magnetoresistance ratio for the favorable heterostructure configuration estimated within the Julliere model is 220%, which opens a way to use VTe2/graphene/VTe2 as prospective magnetic tunnel junction in novel spintronic nanodevices based on tunnel magnetic resistance and spin transfer torque effects.

AB - New perspective 1.4 nm thick spin-polarized triple heterostructures based on graphene sandwiched between two vanadium ditelluride monolayers (VTe2/graphene/VTe2) were studied using ab initio DFT technique. Both possible trigonal prismatic (H-VTe2) and octahedral (T-VTe2) VTe2 phases were considered to design and study graphene-based heterostructures. It was shown that the interaction with graphene changes the electronic structure of 2D T-VTe2 from metallic to half-metallic, making T phase perspective to be used for magnetic tunnel junctions. The electronic subsystem of graphene fragment is slightly hole doped. Calculated tunnel magnetoresistance ratio for the favorable heterostructure configuration estimated within the Julliere model is 220%, which opens a way to use VTe2/graphene/VTe2 as prospective magnetic tunnel junction in novel spintronic nanodevices based on tunnel magnetic resistance and spin transfer torque effects.

KW - Density functional theory

KW - Graphene

KW - Magnetic tunnel junction

KW - Transition metal dichalcogenides

KW - Vanadium ditelluride monolayer

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U2 - 10.1016/j.apsusc.2020.145315

DO - 10.1016/j.apsusc.2020.145315

M3 - Article

AN - SCOPUS:85078320567

SN - 0169-4332

VL - 510

JO - Applied Surface Science

JF - Applied Surface Science

M1 - 145315

ER -

Triple VTe₂/graphene/VTe₂ heterostructures as perspective magnetic tunnel junctions

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