Tunnel barrier engineering of titanium oxide for high non-linearity of selector-less resistive random access memory

Sangheon Lee; Jiyong Woo; Daeseok Lee; Euijun Cha; Jaesung Park; Kibong Moon; Jeonghwan Song; Yunmo Koo; Hyunsang Hwang

doi:10.1063/1.4864471

Tunnel barrier engineering of titanium oxide for high non-linearity of selector-less resistive random access memory

Sangheon Lee
, Jiyong Woo
, Daeseok Lee
, Euijun Cha
, Jaesung Park
, Kibong Moon
, Jeonghwan Song
, Yunmo Koo
, Hyunsang Hwang

School of Electronics Engineering

Pohang University of Science and Technology

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

In this study, the effect of the oxygen profile and thickness of multiple-layers TiO_x on tunnel barrier characteristics was investigated to achieve high non-linearity in low-resistance state current (I_LRS). To form the tunnel barrier in multiple-layer of TiO _x, tunnel barrier engineering in terms of the thickness and oxygen profile was attempted using deposition and thermal oxidation times. It modified the defect distribution of the tunnel barrier for effective suppression of I_LRS at off-state (1/2V_Read). By inserting modified tunnel barrier in resistive random access memory, a high non-linear I_LRS was exhibited with a significantly lowered I_LRS for 1/2V _Read.

Original language	English
Article number	052108
Journal	Applied Physics Letters
Volume	104
Issue number	5
DOIs	https://doi.org/10.1063/1.4864471
State	Published - 3 Feb 2014

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title = "Tunnel barrier engineering of titanium oxide for high non-linearity of selector-less resistive random access memory",

abstract = "In this study, the effect of the oxygen profile and thickness of multiple-layers TiOx on tunnel barrier characteristics was investigated to achieve high non-linearity in low-resistance state current (ILRS). To form the tunnel barrier in multiple-layer of TiO x, tunnel barrier engineering in terms of the thickness and oxygen profile was attempted using deposition and thermal oxidation times. It modified the defect distribution of the tunnel barrier for effective suppression of ILRS at off-state (1/2VRead). By inserting modified tunnel barrier in resistive random access memory, a high non-linear ILRS was exhibited with a significantly lowered ILRS for 1/2V Read.",

author = "Sangheon Lee and Jiyong Woo and Daeseok Lee and Euijun Cha and Jaesung Park and Kibong Moon and Jeonghwan Song and Yunmo Koo and Hyunsang Hwang",

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T1 - Tunnel barrier engineering of titanium oxide for high non-linearity of selector-less resistive random access memory

AU - Lee, Sangheon

AU - Woo, Jiyong

AU - Lee, Daeseok

AU - Cha, Euijun

AU - Park, Jaesung

AU - Moon, Kibong

AU - Song, Jeonghwan

AU - Koo, Yunmo

AU - Hwang, Hyunsang

PY - 2014/2/3

Y1 - 2014/2/3

N2 - In this study, the effect of the oxygen profile and thickness of multiple-layers TiOx on tunnel barrier characteristics was investigated to achieve high non-linearity in low-resistance state current (ILRS). To form the tunnel barrier in multiple-layer of TiO x, tunnel barrier engineering in terms of the thickness and oxygen profile was attempted using deposition and thermal oxidation times. It modified the defect distribution of the tunnel barrier for effective suppression of ILRS at off-state (1/2VRead). By inserting modified tunnel barrier in resistive random access memory, a high non-linear ILRS was exhibited with a significantly lowered ILRS for 1/2V Read.

AB - In this study, the effect of the oxygen profile and thickness of multiple-layers TiOx on tunnel barrier characteristics was investigated to achieve high non-linearity in low-resistance state current (ILRS). To form the tunnel barrier in multiple-layer of TiO x, tunnel barrier engineering in terms of the thickness and oxygen profile was attempted using deposition and thermal oxidation times. It modified the defect distribution of the tunnel barrier for effective suppression of ILRS at off-state (1/2VRead). By inserting modified tunnel barrier in resistive random access memory, a high non-linear ILRS was exhibited with a significantly lowered ILRS for 1/2V Read.

UR - https://www.scopus.com/pages/publications/84899864574

U2 - 10.1063/1.4864471

DO - 10.1063/1.4864471

M3 - Article

AN - SCOPUS:84899864574

SN - 0003-6951

VL - 104

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

M1 - 052108

ER -

Tunnel barrier engineering of titanium oxide for high non-linearity of selector-less resistive random access memory

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