Two-step resist-development process of hydrogen silsesquioxane for high-density electron-beam nanopatterning

Hyo Sung Lee; Jung Sub Wi; Sung Wook Nam; Hyun Mi Kim; Ki Bum Kim

doi:10.1116/1.3049482

Two-step resist-development process of hydrogen silsesquioxane for high-density electron-beam nanopatterning

Hyo Sung Lee, Jung Sub Wi, Sung Wook Nam, Hyun Mi Kim, Ki Bum Kim

Seoul National University

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

It is identified that the development of hydrogen-silsesquioxane resist after electron-beam exposure, by using a 25% tetramethylammonium-hydroxide (TMAH) developer, almost stops after 1 min of development time and it severely limits the delineation of high-density nanometer-scale patterns. By using x-ray photoelectron spectroscopy, the authors identified that this development-stopping phenomenon is due to the formation of a siloxane-type bond structure which is insoluble to the TMAH developer. Here, the authors propose a two-step development method that involves the removal process of siloxane layer using a dilute hydrofluoric acid between development processes. This method successfully eliminates the insoluble layer, thus generating isolated high-density dot patterns with 25 nm pitch.

Original language	English
Pages (from-to)	188-192
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	27
Issue number	1
DOIs	https://doi.org/10.1116/1.3049482
State	Published - 2009

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title = "Two-step resist-development process of hydrogen silsesquioxane for high-density electron-beam nanopatterning",

abstract = "It is identified that the development of hydrogen-silsesquioxane resist after electron-beam exposure, by using a 25\% tetramethylammonium-hydroxide (TMAH) developer, almost stops after 1 min of development time and it severely limits the delineation of high-density nanometer-scale patterns. By using x-ray photoelectron spectroscopy, the authors identified that this development-stopping phenomenon is due to the formation of a siloxane-type bond structure which is insoluble to the TMAH developer. Here, the authors propose a two-step development method that involves the removal process of siloxane layer using a dilute hydrofluoric acid between development processes. This method successfully eliminates the insoluble layer, thus generating isolated high-density dot patterns with 25 nm pitch.",

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T1 - Two-step resist-development process of hydrogen silsesquioxane for high-density electron-beam nanopatterning

AU - Lee, Hyo Sung

AU - Wi, Jung Sub

AU - Nam, Sung Wook

AU - Kim, Hyun Mi

AU - Kim, Ki Bum

PY - 2009

Y1 - 2009

N2 - It is identified that the development of hydrogen-silsesquioxane resist after electron-beam exposure, by using a 25% tetramethylammonium-hydroxide (TMAH) developer, almost stops after 1 min of development time and it severely limits the delineation of high-density nanometer-scale patterns. By using x-ray photoelectron spectroscopy, the authors identified that this development-stopping phenomenon is due to the formation of a siloxane-type bond structure which is insoluble to the TMAH developer. Here, the authors propose a two-step development method that involves the removal process of siloxane layer using a dilute hydrofluoric acid between development processes. This method successfully eliminates the insoluble layer, thus generating isolated high-density dot patterns with 25 nm pitch.

AB - It is identified that the development of hydrogen-silsesquioxane resist after electron-beam exposure, by using a 25% tetramethylammonium-hydroxide (TMAH) developer, almost stops after 1 min of development time and it severely limits the delineation of high-density nanometer-scale patterns. By using x-ray photoelectron spectroscopy, the authors identified that this development-stopping phenomenon is due to the formation of a siloxane-type bond structure which is insoluble to the TMAH developer. Here, the authors propose a two-step development method that involves the removal process of siloxane layer using a dilute hydrofluoric acid between development processes. This method successfully eliminates the insoluble layer, thus generating isolated high-density dot patterns with 25 nm pitch.

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JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

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Two-step resist-development process of hydrogen silsesquioxane for high-density electron-beam nanopatterning

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