Ultra-shallow junction formation by plasma doping and excimer laser annealing

Lak Myung Jung; Seung Woo Do; Jae Min Kim; Seong Ho Kong; Ki Hong Nam; Young Hyun Lee

doi:10.1149/1.3118934

Ultra-shallow junction formation by plasma doping and excimer laser annealing

Lak Myung Jung, Seung Woo Do, Jae Min Kim, Seong Ho Kong, Ki Hong Nam, Young Hyun Lee

School of Electronics Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

Plasma doping (PLAD) process using PH₃ plasma is presented to fabricate n+/p ultra shallow junction at room temperature. Directly after the PLAD, a pre-annealing has been conducted for 5 min at 500 °C in thermal furnace. ArF excimer laser annealing (ELA) process was then followed with an increment of 20 mJ/cm² in the laser energy ranging from 400 to 500 mJ/cm². When the laser energy density was larger than 460 mJ/cm ², a reduced sheet resistance was observed. In order to examine the crystalline defects generated during PLAD, the transmission electron microscopy (TEM) and double crystal X-ray diffraction (DXRD) measurements have been made. With optimized PLAD and ELA conditions, junction depth of 30 nm and sheet resistance of 151.6 Ω/□ could be obtained.

Original language	English
Title of host publication	ECS Transactions - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 5
Subtitle of host publication	New Materials, Processes, and Equipment
Publisher	Electrochemical Society Inc.
Pages	87-94
Number of pages	8
Edition	1
ISBN (Electronic)	9781607680598
ISBN (Print)	9781566777094
DOIs	https://doi.org/10.1149/1.3118934
State	Published - 2009
Event	International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment - 215th ECS Meeting - San Francisco, CA, United States Duration: 24 May 2009 → 29 May 2009

Publication series

Name	ECS Transactions
Number	1
Volume	19
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment - 215th ECS Meeting
Country/Territory	United States
City	San Francisco, CA
Period	24/05/09 → 29/05/09

Access to Document

10.1149/1.3118934

Cite this

Jung, L. M., Do, S. W., Kim, J. M., Kong, S. H., Nam, K. H., & Lee, Y. H. (2009). Ultra-shallow junction formation by plasma doping and excimer laser annealing. In ECS Transactions - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 5: New Materials, Processes, and Equipment (1 ed., pp. 87-94). (ECS Transactions; Vol. 19, No. 1). Electrochemical Society Inc.. https://doi.org/10.1149/1.3118934

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title = "Ultra-shallow junction formation by plasma doping and excimer laser annealing",

abstract = "Plasma doping (PLAD) process using PH3 plasma is presented to fabricate n+/p ultra shallow junction at room temperature. Directly after the PLAD, a pre-annealing has been conducted for 5 min at 500 °C in thermal furnace. ArF excimer laser annealing (ELA) process was then followed with an increment of 20 mJ/cm2 in the laser energy ranging from 400 to 500 mJ/cm2. When the laser energy density was larger than 460 mJ/cm 2, a reduced sheet resistance was observed. In order to examine the crystalline defects generated during PLAD, the transmission electron microscopy (TEM) and double crystal X-ray diffraction (DXRD) measurements have been made. With optimized PLAD and ELA conditions, junction depth of 30 nm and sheet resistance of 151.6 Ω/□ could be obtained.",

author = "Jung, {Lak Myung} and Do, {Seung Woo} and Kim, {Jae Min} and Kong, {Seong Ho} and Nam, {Ki Hong} and Lee, {Young Hyun}",

year = "2009",

doi = "10.1149/1.3118934",

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series = "ECS Transactions",

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address = "United States",

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note = "International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment - 215th ECS Meeting ; Conference date: 24-05-2009 Through 29-05-2009",

}

Jung, LM, Do, SW, Kim, JM, Kong, SH, Nam, KH & Lee, YH 2009, Ultra-shallow junction formation by plasma doping and excimer laser annealing. in ECS Transactions - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 5: New Materials, Processes, and Equipment. 1 edn, ECS Transactions, no. 1, vol. 19, Electrochemical Society Inc., pp. 87-94, International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment - 215th ECS Meeting, San Francisco, CA, United States, 24/05/09. https://doi.org/10.1149/1.3118934

Ultra-shallow junction formation by plasma doping and excimer laser annealing. / Jung, Lak Myung; Do, Seung Woo; Kim, Jae Min et al.
ECS Transactions - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 5: New Materials, Processes, and Equipment. 1. ed. Electrochemical Society Inc., 2009. p. 87-94 (ECS Transactions; Vol. 19, No. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Ultra-shallow junction formation by plasma doping and excimer laser annealing

AU - Jung, Lak Myung

AU - Do, Seung Woo

AU - Kim, Jae Min

AU - Kong, Seong Ho

AU - Nam, Ki Hong

AU - Lee, Young Hyun

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N2 - Plasma doping (PLAD) process using PH3 plasma is presented to fabricate n+/p ultra shallow junction at room temperature. Directly after the PLAD, a pre-annealing has been conducted for 5 min at 500 °C in thermal furnace. ArF excimer laser annealing (ELA) process was then followed with an increment of 20 mJ/cm2 in the laser energy ranging from 400 to 500 mJ/cm2. When the laser energy density was larger than 460 mJ/cm 2, a reduced sheet resistance was observed. In order to examine the crystalline defects generated during PLAD, the transmission electron microscopy (TEM) and double crystal X-ray diffraction (DXRD) measurements have been made. With optimized PLAD and ELA conditions, junction depth of 30 nm and sheet resistance of 151.6 Ω/□ could be obtained.

AB - Plasma doping (PLAD) process using PH3 plasma is presented to fabricate n+/p ultra shallow junction at room temperature. Directly after the PLAD, a pre-annealing has been conducted for 5 min at 500 °C in thermal furnace. ArF excimer laser annealing (ELA) process was then followed with an increment of 20 mJ/cm2 in the laser energy ranging from 400 to 500 mJ/cm2. When the laser energy density was larger than 460 mJ/cm 2, a reduced sheet resistance was observed. In order to examine the crystalline defects generated during PLAD, the transmission electron microscopy (TEM) and double crystal X-ray diffraction (DXRD) measurements have been made. With optimized PLAD and ELA conditions, junction depth of 30 nm and sheet resistance of 151.6 Ω/□ could be obtained.

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ER -

Ultra-shallow junction formation by plasma doping and excimer laser annealing

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