Ultrafast Nanoscale Phase-Change Memory Enabled by Single-Pulse Conditioning

Desmond K. Loke; Jonathan M. Skelton; Tae Hoon Lee; Rong Zhao; Tow Chong Chong; Stephen R. Elliott

doi:10.1021/acsami.8b16033

Ultrafast Nanoscale Phase-Change Memory Enabled by Single-Pulse Conditioning

Desmond K. Loke, Jonathan M. Skelton, Tae Hoon Lee, Rong Zhao, Tow Chong Chong, Stephen R. Elliott

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37 Scopus citations

Abstract

We describe how the crystallization kinetics of a suite of phase-change systems can be controlled by using a single-shot treatment via "initial crystallization" effects. Ultrarapid and highly stable phase-change structures (with excellent characteristics), viz. conventional and sub-10 nm sized cells (400 ps switching and 368 K for 10 year data retention), stackable cells (900 ps switching and 1 × 10 ⁶ cycles for similar "switching-on" voltages), and multilevel configurations (800 ps switching and resistance-drift power-law coefficients <0.11) have been demonstrated. Material measurements and thermal calculations also reveal the origin of the pretreatment-assisted increase in crystallization rates and the thermal diffusion in chalcogenide structures, respectively.

Original language	English
Pages (from-to)	41855-41860
Number of pages	6
Journal	ACS Applied Materials and Interfaces
Volume	10
Issue number	49
DOIs	https://doi.org/10.1021/acsami.8b16033
State	Published - 12 Dec 2018

Keywords

electric-field control
meta-material
nanoscale
phase-change memory
thermal engineering

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10.1021/acsami.8b16033

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@article{2677c34885994859aee223d72560c5d0,

title = "Ultrafast Nanoscale Phase-Change Memory Enabled by Single-Pulse Conditioning",

abstract = " We describe how the crystallization kinetics of a suite of phase-change systems can be controlled by using a single-shot treatment via {"}initial crystallization{"} effects. Ultrarapid and highly stable phase-change structures (with excellent characteristics), viz. conventional and sub-10 nm sized cells (400 ps switching and 368 K for 10 year data retention), stackable cells (900 ps switching and 1 × 10 6 cycles for similar {"}switching-on{"} voltages), and multilevel configurations (800 ps switching and resistance-drift power-law coefficients <0.11) have been demonstrated. Material measurements and thermal calculations also reveal the origin of the pretreatment-assisted increase in crystallization rates and the thermal diffusion in chalcogenide structures, respectively.",

keywords = "electric-field control, meta-material, nanoscale, phase-change memory, thermal engineering",

author = "Loke, {Desmond K.} and Skelton, {Jonathan M.} and Lee, {Tae Hoon} and Rong Zhao and Chong, {Tow Chong} and Elliott, {Stephen R.}",

note = "Publisher Copyright: {\textcopyright} 2018 American Chemical Society.",

year = "2018",

month = dec,

day = "12",

doi = "10.1021/acsami.8b16033",

language = "English",

volume = "10",

pages = "41855--41860",

journal = "ACS Applied Materials and Interfaces",

issn = "1944-8244",

publisher = "American Chemical Society",

number = "49",

}

TY - JOUR

T1 - Ultrafast Nanoscale Phase-Change Memory Enabled by Single-Pulse Conditioning

AU - Loke, Desmond K.

AU - Skelton, Jonathan M.

AU - Lee, Tae Hoon

AU - Zhao, Rong

AU - Chong, Tow Chong

AU - Elliott, Stephen R.

PY - 2018/12/12

Y1 - 2018/12/12

N2 - We describe how the crystallization kinetics of a suite of phase-change systems can be controlled by using a single-shot treatment via "initial crystallization" effects. Ultrarapid and highly stable phase-change structures (with excellent characteristics), viz. conventional and sub-10 nm sized cells (400 ps switching and 368 K for 10 year data retention), stackable cells (900 ps switching and 1 × 10 6 cycles for similar "switching-on" voltages), and multilevel configurations (800 ps switching and resistance-drift power-law coefficients <0.11) have been demonstrated. Material measurements and thermal calculations also reveal the origin of the pretreatment-assisted increase in crystallization rates and the thermal diffusion in chalcogenide structures, respectively.

AB - We describe how the crystallization kinetics of a suite of phase-change systems can be controlled by using a single-shot treatment via "initial crystallization" effects. Ultrarapid and highly stable phase-change structures (with excellent characteristics), viz. conventional and sub-10 nm sized cells (400 ps switching and 368 K for 10 year data retention), stackable cells (900 ps switching and 1 × 10 6 cycles for similar "switching-on" voltages), and multilevel configurations (800 ps switching and resistance-drift power-law coefficients <0.11) have been demonstrated. Material measurements and thermal calculations also reveal the origin of the pretreatment-assisted increase in crystallization rates and the thermal diffusion in chalcogenide structures, respectively.

KW - electric-field control

KW - meta-material

KW - nanoscale

KW - phase-change memory

KW - thermal engineering

UR - http://www.scopus.com/inward/record.url?scp=85058189891&partnerID=8YFLogxK

U2 - 10.1021/acsami.8b16033

DO - 10.1021/acsami.8b16033

M3 - Article

C2 - 30507141

AN - SCOPUS:85058189891

SN - 1944-8244

VL - 10

SP - 41855

EP - 41860

JO - ACS Applied Materials and Interfaces

JF - ACS Applied Materials and Interfaces

IS - 49

ER -

Ultrafast Nanoscale Phase-Change Memory Enabled by Single-Pulse Conditioning

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Keywords

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