Ultrafast Nanoscale Phase-Change Memory Enabled by Single-Pulse Conditioning

Desmond K. Loke; Jonathan M. Skelton; Tae Hoon Lee; Rong Zhao; Tow Chong Chong; Stephen R. Elliott

doi:10.1021/acsami.8b16033

Ultrafast Nanoscale Phase-Change Memory Enabled by Single-Pulse Conditioning

Desmond K. Loke, Jonathan M. Skelton, Tae Hoon Lee, Rong Zhao, Tow Chong Chong, Stephen R. Elliott

Research output: Contribution to journal › Article › peer-review

39 Scopus citations

Abstract

We describe how the crystallization kinetics of a suite of phase-change systems can be controlled by using a single-shot treatment via "initial crystallization" effects. Ultrarapid and highly stable phase-change structures (with excellent characteristics), viz. conventional and sub-10 nm sized cells (400 ps switching and 368 K for 10 year data retention), stackable cells (900 ps switching and 1 × 10 ⁶ cycles for similar "switching-on" voltages), and multilevel configurations (800 ps switching and resistance-drift power-law coefficients <0.11) have been demonstrated. Material measurements and thermal calculations also reveal the origin of the pretreatment-assisted increase in crystallization rates and the thermal diffusion in chalcogenide structures, respectively.

Original language	English
Pages (from-to)	41855-41860
Number of pages	6
Journal	ACS Applied Materials and Interfaces
Volume	10
Issue number	49
DOIs	https://doi.org/10.1021/acsami.8b16033
State	Published - 12 Dec 2018

Keywords

electric-field control
meta-material
nanoscale
phase-change memory
thermal engineering

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10.1021/acsami.8b16033

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title = "Ultrafast Nanoscale Phase-Change Memory Enabled by Single-Pulse Conditioning",

abstract = " We describe how the crystallization kinetics of a suite of phase-change systems can be controlled by using a single-shot treatment via {"}initial crystallization{"} effects. Ultrarapid and highly stable phase-change structures (with excellent characteristics), viz. conventional and sub-10 nm sized cells (400 ps switching and 368 K for 10 year data retention), stackable cells (900 ps switching and 1 × 10 6 cycles for similar {"}switching-on{"} voltages), and multilevel configurations (800 ps switching and resistance-drift power-law coefficients <0.11) have been demonstrated. Material measurements and thermal calculations also reveal the origin of the pretreatment-assisted increase in crystallization rates and the thermal diffusion in chalcogenide structures, respectively.",

keywords = "electric-field control, meta-material, nanoscale, phase-change memory, thermal engineering",

author = "Loke, \{Desmond K.\} and Skelton, \{Jonathan M.\} and Lee, \{Tae Hoon\} and Rong Zhao and Chong, \{Tow Chong\} and Elliott, \{Stephen R.\}",

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doi = "10.1021/acsami.8b16033",

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AU - Loke, Desmond K.

AU - Skelton, Jonathan M.

AU - Lee, Tae Hoon

AU - Zhao, Rong

AU - Chong, Tow Chong

AU - Elliott, Stephen R.

PY - 2018/12/12

Y1 - 2018/12/12

N2 - We describe how the crystallization kinetics of a suite of phase-change systems can be controlled by using a single-shot treatment via "initial crystallization" effects. Ultrarapid and highly stable phase-change structures (with excellent characteristics), viz. conventional and sub-10 nm sized cells (400 ps switching and 368 K for 10 year data retention), stackable cells (900 ps switching and 1 × 10 6 cycles for similar "switching-on" voltages), and multilevel configurations (800 ps switching and resistance-drift power-law coefficients <0.11) have been demonstrated. Material measurements and thermal calculations also reveal the origin of the pretreatment-assisted increase in crystallization rates and the thermal diffusion in chalcogenide structures, respectively.

AB - We describe how the crystallization kinetics of a suite of phase-change systems can be controlled by using a single-shot treatment via "initial crystallization" effects. Ultrarapid and highly stable phase-change structures (with excellent characteristics), viz. conventional and sub-10 nm sized cells (400 ps switching and 368 K for 10 year data retention), stackable cells (900 ps switching and 1 × 10 6 cycles for similar "switching-on" voltages), and multilevel configurations (800 ps switching and resistance-drift power-law coefficients <0.11) have been demonstrated. Material measurements and thermal calculations also reveal the origin of the pretreatment-assisted increase in crystallization rates and the thermal diffusion in chalcogenide structures, respectively.

KW - electric-field control

KW - meta-material

KW - nanoscale

KW - phase-change memory

KW - thermal engineering

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DO - 10.1021/acsami.8b16033

M3 - Article

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JO - ACS Applied Materials and Interfaces

JF - ACS Applied Materials and Interfaces

IS - 49

ER -

Ultrafast Nanoscale Phase-Change Memory Enabled by Single-Pulse Conditioning

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