Ultrathin (<10nm) Nb 2O 5/NbO 2 hybrid memory with both memory and selector characteristics for high density 3D vertically stackable RRAM applications

Seonghyun Kim; Xinjun Liu; Jubong Park; Seungjae Jung; Wootae Lee; Jiyong Woo; Jungho Shin; Godeuni Choi; Chumhum Cho; Sangsu Park; Daeseok Lee; Eui Jun Cha; Byoung Hun Lee; Hyung Dong Lee; Soo Gil Kim; Suock Chung; Hyunsang Hwang

doi:10.1109/VLSIT.2012.6242508

Ultrathin (<10nm) Nb ₂O ₅/NbO ₂ hybrid memory with both memory and selector characteristics for high density 3D vertically stackable RRAM applications

Seonghyun Kim
, Xinjun Liu
, Jubong Park
, Seungjae Jung
, Wootae Lee
, Jiyong Woo
, Jungho Shin
, Godeuni Choi
, Chumhum Cho
, Sangsu Park
, Daeseok Lee
, Eui Jun Cha
, Byoung Hun Lee
, Hyung Dong Lee
, Soo Gil Kim
, Suock Chung
, Hyunsang Hwang

School of Electronics Engineering

Gwangju Institute of Science and Technology
SK Corporation

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

118 Scopus citations

Abstract

We report, for the first time, the novel concept of ultrathin (∼10nm) W/NbO _x/Pt device with both threshold switching (TS) and memory switching (MS) characteristics. Excellent TS characteristics of NbO ₂, such as high temperature stability (∼160°C), fast switching speed (∼22ns), good switching uniformity, and extreme scalability of device area (φ∼10nm)/thickness (∼10nm) were obtained. By oxidizing NbO ₂, we can form ultrathin Nb ₂O ₅/NbO ₂ stack layer for hybrid memory devices with both TS and MS. Without additional selector device, 1Kb cross-point hybrid memory device without SET/RESET disturbance up to 10 ⁶ cycles was demonstrated.

Original language	English
Title of host publication	2012 Symposium on VLSI Technology, VLSIT 2012 - Digest of Technical Papers
Pages	155-156
Number of pages	2
DOIs	https://doi.org/10.1109/VLSIT.2012.6242508
State	Published - 2012
Event	2012 Symposium on VLSI Technology, VLSIT 2012 - Honolulu, HI, United States Duration: 12 Jun 2012 → 14 Jun 2012

Publication series

Name	Digest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)	0743-1562

Conference

Conference	2012 Symposium on VLSI Technology, VLSIT 2012
Country/Territory	United States
City	Honolulu, HI
Period	12/06/12 → 14/06/12

Access to Document

10.1109/VLSIT.2012.6242508

Cite this

Kim, S., Liu, X., Park, J., Jung, S., Lee, W., Woo, J., Shin, J., Choi, G., Cho, C., Park, S., Lee, D., Cha, E. J., Lee, B. H., Lee, H. D., Kim, S. G., Chung, S., & Hwang, H. (2012). Ultrathin (<10nm) Nb ₂O ₅/NbO ₂ hybrid memory with both memory and selector characteristics for high density 3D vertically stackable RRAM applications. In 2012 Symposium on VLSI Technology, VLSIT 2012 - Digest of Technical Papers (pp. 155-156). Article 6242508 (Digest of Technical Papers - Symposium on VLSI Technology). https://doi.org/10.1109/VLSIT.2012.6242508

@inproceedings{951bcc0c02924f8fbe01cb25a08c63c2,

title = "Ultrathin (<10nm) Nb 2O 5/NbO 2 hybrid memory with both memory and selector characteristics for high density 3D vertically stackable RRAM applications",

abstract = "We report, for the first time, the novel concept of ultrathin (∼10nm) W/NbO x/Pt device with both threshold switching (TS) and memory switching (MS) characteristics. Excellent TS characteristics of NbO 2, such as high temperature stability (∼160°C), fast switching speed (∼22ns), good switching uniformity, and extreme scalability of device area (φ∼10nm)/thickness (∼10nm) were obtained. By oxidizing NbO 2, we can form ultrathin Nb 2O 5/NbO 2 stack layer for hybrid memory devices with both TS and MS. Without additional selector device, 1Kb cross-point hybrid memory device without SET/RESET disturbance up to 10 6 cycles was demonstrated.",

author = "Seonghyun Kim and Xinjun Liu and Jubong Park and Seungjae Jung and Wootae Lee and Jiyong Woo and Jungho Shin and Godeuni Choi and Chumhum Cho and Sangsu Park and Daeseok Lee and Cha, \{Eui Jun\} and Lee, \{Byoung Hun\} and Lee, \{Hyung Dong\} and Kim, \{Soo Gil\} and Suock Chung and Hyunsang Hwang",

year = "2012",

doi = "10.1109/VLSIT.2012.6242508",

language = "English",

isbn = "9781467308458",

series = "Digest of Technical Papers - Symposium on VLSI Technology",

pages = "155--156",

booktitle = "2012 Symposium on VLSI Technology, VLSIT 2012 - Digest of Technical Papers",

note = "2012 Symposium on VLSI Technology, VLSIT 2012 ; Conference date: 12-06-2012 Through 14-06-2012",

}

Kim, S, Liu, X, Park, J, Jung, S, Lee, W, Woo, J, Shin, J, Choi, G, Cho, C, Park, S, Lee, D, Cha, EJ, Lee, BH, Lee, HD, Kim, SG, Chung, S & Hwang, H 2012, Ultrathin (<10nm) Nb ₂O ₅/NbO ₂ hybrid memory with both memory and selector characteristics for high density 3D vertically stackable RRAM applications. in 2012 Symposium on VLSI Technology, VLSIT 2012 - Digest of Technical Papers., 6242508, Digest of Technical Papers - Symposium on VLSI Technology, pp. 155-156, 2012 Symposium on VLSI Technology, VLSIT 2012, Honolulu, HI, United States, 12/06/12. https://doi.org/10.1109/VLSIT.2012.6242508

Ultrathin (<10nm) Nb ₂O ₅/NbO ₂ hybrid memory with both memory and selector characteristics for high density 3D vertically stackable RRAM applications. / Kim, Seonghyun; Liu, Xinjun; Park, Jubong et al.
2012 Symposium on VLSI Technology, VLSIT 2012 - Digest of Technical Papers. 2012. p. 155-156 6242508 (Digest of Technical Papers - Symposium on VLSI Technology).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Ultrathin (<10nm) Nb 2O 5/NbO 2 hybrid memory with both memory and selector characteristics for high density 3D vertically stackable RRAM applications

AU - Kim, Seonghyun

AU - Liu, Xinjun

AU - Park, Jubong

AU - Jung, Seungjae

AU - Lee, Wootae

AU - Woo, Jiyong

AU - Shin, Jungho

AU - Choi, Godeuni

AU - Cho, Chumhum

AU - Park, Sangsu

AU - Lee, Daeseok

AU - Cha, Eui Jun

AU - Lee, Byoung Hun

AU - Lee, Hyung Dong

AU - Kim, Soo Gil

AU - Chung, Suock

AU - Hwang, Hyunsang

PY - 2012

Y1 - 2012

N2 - We report, for the first time, the novel concept of ultrathin (∼10nm) W/NbO x/Pt device with both threshold switching (TS) and memory switching (MS) characteristics. Excellent TS characteristics of NbO 2, such as high temperature stability (∼160°C), fast switching speed (∼22ns), good switching uniformity, and extreme scalability of device area (φ∼10nm)/thickness (∼10nm) were obtained. By oxidizing NbO 2, we can form ultrathin Nb 2O 5/NbO 2 stack layer for hybrid memory devices with both TS and MS. Without additional selector device, 1Kb cross-point hybrid memory device without SET/RESET disturbance up to 10 6 cycles was demonstrated.

AB - We report, for the first time, the novel concept of ultrathin (∼10nm) W/NbO x/Pt device with both threshold switching (TS) and memory switching (MS) characteristics. Excellent TS characteristics of NbO 2, such as high temperature stability (∼160°C), fast switching speed (∼22ns), good switching uniformity, and extreme scalability of device area (φ∼10nm)/thickness (∼10nm) were obtained. By oxidizing NbO 2, we can form ultrathin Nb 2O 5/NbO 2 stack layer for hybrid memory devices with both TS and MS. Without additional selector device, 1Kb cross-point hybrid memory device without SET/RESET disturbance up to 10 6 cycles was demonstrated.

UR - https://www.scopus.com/pages/publications/84866541246

U2 - 10.1109/VLSIT.2012.6242508

DO - 10.1109/VLSIT.2012.6242508

M3 - Conference contribution

AN - SCOPUS:84866541246

SN - 9781467308458

T3 - Digest of Technical Papers - Symposium on VLSI Technology

SP - 155

EP - 156

BT - 2012 Symposium on VLSI Technology, VLSIT 2012 - Digest of Technical Papers

T2 - 2012 Symposium on VLSI Technology, VLSIT 2012

Y2 - 12 June 2012 through 14 June 2012

ER -

Kim S, Liu X, Park J, Jung S, Lee W, Woo J et al. Ultrathin (<10nm) Nb ₂O ₅/NbO ₂ hybrid memory with both memory and selector characteristics for high density 3D vertically stackable RRAM applications. In 2012 Symposium on VLSI Technology, VLSIT 2012 - Digest of Technical Papers. 2012. p. 155-156. 6242508. (Digest of Technical Papers - Symposium on VLSI Technology). doi: 10.1109/VLSIT.2012.6242508