TY - JOUR
T1 - Understanding the Phase Transition Evolution Mechanism of Partially M2 Phased VO2Film by Hydrogen Incorporation
AU - Lee, Dooyong
AU - Min, Taewon
AU - Lee, Gongin
AU - Kim, Jiwoong
AU - Song, Sehwan
AU - Lee, Jisung
AU - Bae, Jong Seong
AU - Kang, Haeyong
AU - Lee, Jaekwang
AU - Park, Sungkyun
N1 - Publisher Copyright:
© 2020 American Chemical Society.
PY - 2020/11/19
Y1 - 2020/11/19
N2 - Studies on the hydrogen incorporated M1 phase of VO2 film have been widely reported. However, there are few works on an M2 phase of VO2. Recently, the M2 phase in VO2 has received considerable attention due to the possibility of realizing a Mott transition field-effect transistor. By varying the postannealing environment, systematic variations of the M2 phase in (020)-oriented VO2 films grown on Al2O3(0001) were observed. The M2 phase converted to the metallic M1 phase at first and then to the metallic rutile phase after hydrogen annealing (i.e., for H2/N2 mixture and H2 environments). From the diffraction and spectroscopy measurements, the transition is attributed to suppressed electron interactions, not structural modification caused by hydrogen incorporation. Our results suggest the understanding of the phase transition process of the M2 phase by hydrogen incorporation and the possibility of realization of the M2 phased-based Mott transition field-effect transistor.
AB - Studies on the hydrogen incorporated M1 phase of VO2 film have been widely reported. However, there are few works on an M2 phase of VO2. Recently, the M2 phase in VO2 has received considerable attention due to the possibility of realizing a Mott transition field-effect transistor. By varying the postannealing environment, systematic variations of the M2 phase in (020)-oriented VO2 films grown on Al2O3(0001) were observed. The M2 phase converted to the metallic M1 phase at first and then to the metallic rutile phase after hydrogen annealing (i.e., for H2/N2 mixture and H2 environments). From the diffraction and spectroscopy measurements, the transition is attributed to suppressed electron interactions, not structural modification caused by hydrogen incorporation. Our results suggest the understanding of the phase transition process of the M2 phase by hydrogen incorporation and the possibility of realization of the M2 phased-based Mott transition field-effect transistor.
UR - http://www.scopus.com/inward/record.url?scp=85096456978&partnerID=8YFLogxK
U2 - 10.1021/acs.jpclett.0c02592
DO - 10.1021/acs.jpclett.0c02592
M3 - Article
C2 - 33135900
AN - SCOPUS:85096456978
SN - 1948-7185
VL - 11
SP - 9680
EP - 9688
JO - Journal of Physical Chemistry Letters
JF - Journal of Physical Chemistry Letters
IS - 22
ER -