UV-A selective photo-responsivity in a GaN MSM photodetector using ITO schottky electrodes

Chang Ju Lee; Gyo Hun Koo; Dong Seok Kim; Jun Yeon Yun; Jung Hee Lee; Sung Ho Hahm

doi:10.1109/EDSSC.2011.6117620

UV-A selective photo-responsivity in a GaN MSM photodetector using ITO schottky electrodes

Chang Ju Lee, Gyo Hun Koo, Dong Seok Kim, Jun Yeon Yun, Jung Hee Lee, Sung Ho Hahm

School of Electronics Engineering

Kyungpook National University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We examined the AlGaN buffer layer dependent photo-response characteristics of the metal-semiconductor-metal (MSM) UV photodetectors (PDs). In the AlGaN buffer layer PD sample, the peak photo-current was of 4.5 μA at 5 V for 365 nm and dark current level ws 4 pA at 1 V. The UV/visible rejection ratio of AlGaN buffer sample was higher than 10 ⁴ and HT-GaN/LT-AlN sample was 10 ² at 1 V, respectively. We observed a UV-A selective (or band-pass-like) response behavior near the 360∼370 nm range.

Original language	English
Title of host publication	2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011
DOIs	https://doi.org/10.1109/EDSSC.2011.6117620
State	Published - 2011
Event	2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011 - Tianjin, China Duration: 17 Nov 2011 → 18 Nov 2011

Publication series

Name	2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011

Conference

Conference	2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011
Country/Territory	China
City	Tianjin
Period	17/11/11 → 18/11/11

Keywords

AlGaN buffer layer
GaN
UV photodetector
UV-A selective

Access to Document

10.1109/EDSSC.2011.6117620

Cite this

Lee, C. J., Koo, G. H., Kim, D. S., Yun, J. Y., Lee, J. H., & Hahm, S. H. (2011). UV-A selective photo-responsivity in a GaN MSM photodetector using ITO schottky electrodes. In 2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011 Article 6117620 (2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011). https://doi.org/10.1109/EDSSC.2011.6117620

@inproceedings{6993b360c1e34298a9bae80cd8a72a3e,

title = "UV-A selective photo-responsivity in a GaN MSM photodetector using ITO schottky electrodes",

abstract = "We examined the AlGaN buffer layer dependent photo-response characteristics of the metal-semiconductor-metal (MSM) UV photodetectors (PDs). In the AlGaN buffer layer PD sample, the peak photo-current was of 4.5 μA at 5 V for 365 nm and dark current level ws 4 pA at 1 V. The UV/visible rejection ratio of AlGaN buffer sample was higher than 10 4 and HT-GaN/LT-AlN sample was 10 2 at 1 V, respectively. We observed a UV-A selective (or band-pass-like) response behavior near the 360∼370 nm range.",

keywords = "AlGaN buffer layer, GaN, UV photodetector, UV-A selective",

author = "Lee, {Chang Ju} and Koo, {Gyo Hun} and Kim, {Dong Seok} and Yun, {Jun Yeon} and Lee, {Jung Hee} and Hahm, {Sung Ho}",

year = "2011",

doi = "10.1109/EDSSC.2011.6117620",

language = "English",

isbn = "9781457719974",

series = "2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011",

booktitle = "2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011",

note = "2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011 ; Conference date: 17-11-2011 Through 18-11-2011",

}

Lee, CJ, Koo, GH, Kim, DS, Yun, JY, Lee, JH & Hahm, SH 2011, UV-A selective photo-responsivity in a GaN MSM photodetector using ITO schottky electrodes. in 2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011., 6117620, 2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011, 2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011, Tianjin, China, 17/11/11. https://doi.org/10.1109/EDSSC.2011.6117620

UV-A selective photo-responsivity in a GaN MSM photodetector using ITO schottky electrodes. / Lee, Chang Ju; Koo, Gyo Hun; Kim, Dong Seok et al.
2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011. 2011. 6117620 (2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - UV-A selective photo-responsivity in a GaN MSM photodetector using ITO schottky electrodes

AU - Lee, Chang Ju

AU - Koo, Gyo Hun

AU - Kim, Dong Seok

AU - Yun, Jun Yeon

AU - Lee, Jung Hee

AU - Hahm, Sung Ho

PY - 2011

Y1 - 2011

N2 - We examined the AlGaN buffer layer dependent photo-response characteristics of the metal-semiconductor-metal (MSM) UV photodetectors (PDs). In the AlGaN buffer layer PD sample, the peak photo-current was of 4.5 μA at 5 V for 365 nm and dark current level ws 4 pA at 1 V. The UV/visible rejection ratio of AlGaN buffer sample was higher than 10 4 and HT-GaN/LT-AlN sample was 10 2 at 1 V, respectively. We observed a UV-A selective (or band-pass-like) response behavior near the 360∼370 nm range.

AB - We examined the AlGaN buffer layer dependent photo-response characteristics of the metal-semiconductor-metal (MSM) UV photodetectors (PDs). In the AlGaN buffer layer PD sample, the peak photo-current was of 4.5 μA at 5 V for 365 nm and dark current level ws 4 pA at 1 V. The UV/visible rejection ratio of AlGaN buffer sample was higher than 10 4 and HT-GaN/LT-AlN sample was 10 2 at 1 V, respectively. We observed a UV-A selective (or band-pass-like) response behavior near the 360∼370 nm range.

KW - AlGaN buffer layer

KW - GaN

KW - UV photodetector

KW - UV-A selective

UR - http://www.scopus.com/inward/record.url?scp=84862932406&partnerID=8YFLogxK

U2 - 10.1109/EDSSC.2011.6117620

DO - 10.1109/EDSSC.2011.6117620

M3 - Conference contribution

AN - SCOPUS:84862932406

SN - 9781457719974

T3 - 2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011

BT - 2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011

T2 - 2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011

Y2 - 17 November 2011 through 18 November 2011

ER -

Lee CJ, Koo GH, Kim DS, Yun JY, Lee JH, Hahm SH. UV-A selective photo-responsivity in a GaN MSM photodetector using ITO schottky electrodes. In 2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011. 2011. 6117620. (2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011). doi: 10.1109/EDSSC.2011.6117620

UV-A selective photo-responsivity in a GaN MSM photodetector using ITO schottky electrodes

Abstract

Publication series

Conference

Keywords

Access to Document

Other files and links

Fingerprint

Cite this