UV-assisted rapid synthesis of high quality CsPbBr₃perovskite single crystals

Inorganic halide perovskite single crystals have garnered significant interest due to their outstanding optical and electrical properties, making them strong candidates for a wide range of optoelectronic applications. However, conventional crystal growth techniques, such as the Bridgman, antisolvent, and inverse temperature crystallization (ITC) methods, often require complex procedures, high temperatures, and prolonged processing times. Here, we present a straightforward and efficient synthesis method for high-quality CsPbBr₃perovskite single crystals based on ultraviolet (UV) light irradiation. This method employs UV light to provide the energy required for the CsPbBr₃crystallization process, which includes molecularization, ionization, and nucleation. The single crystals synthesized using the UV method (UV-grown) exhibit an average carrier lifetime of 17 ns (twice that of ITC-grown counterparts) and a hole mobility of 197 cm²V⁻¹s⁻¹(a six-fold increase over ITC-grown counterparts). Our method not only provides enhanced optoelectronic properties but also simplifies the crystal synthesis process. This advancement paves the way for the scalable production of large-size CsPbBr₃single crystals for in-depth fundamental studies and a wide range of optoelectronic applications.