UV photo-responsive characteristics of an n-channel GaN Schottky-barrier MISFET for UV image sensors

Heon Bok Lee; Hyun Su An; Hyun Ick Cho; Jung Hee Lee; Sung Ho Hahm

doi:10.1109/LED.2006.879044

UV photo-responsive characteristics of an n-channel GaN Schottky-barrier MISFET for UV image sensors

Heon Bok Lee
, Hyun Su An
, Hyun Ick Cho
, Jung Hee Lee
, Sung Ho Hahm

School of Electronics Engineering

Kyungpook National University

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

The ultraviolet (UV) responsive properties of the enhancement-mode n-channel Schottky-barrier MISFET (SB-MISFET), which was fabricated on a p-type GaN layer grown on silicon substrate, were investigated. The drain leakage current of the MISFET is less than 1 nA/mm², which is quite low compared to recently reported photodetectors. The MISFET exhibited a cutoff wavelength of 365 nm, and the UV/visible rejection ratio was about 120 near the threshold voltage. This is the first demonstration of the MISFET-type UV photodetector, which is highly applicable to the UV image sensors.

Original language	English
Pages (from-to)	656-658
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	27
Issue number	8
DOIs	https://doi.org/10.1109/LED.2006.879044
State	Published - Aug 2006

Keywords

GaN
MISFET
Schottky barrier
Ultraviolet (UV) photodetector

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10.1109/LED.2006.879044

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title = "UV photo-responsive characteristics of an n-channel GaN Schottky-barrier MISFET for UV image sensors",

abstract = "The ultraviolet (UV) responsive properties of the enhancement-mode n-channel Schottky-barrier MISFET (SB-MISFET), which was fabricated on a p-type GaN layer grown on silicon substrate, were investigated. The drain leakage current of the MISFET is less than 1 nA/mm2, which is quite low compared to recently reported photodetectors. The MISFET exhibited a cutoff wavelength of 365 nm, and the UV/visible rejection ratio was about 120 near the threshold voltage. This is the first demonstration of the MISFET-type UV photodetector, which is highly applicable to the UV image sensors.",

keywords = "GaN, MISFET, Schottky barrier, Ultraviolet (UV) photodetector",

author = "Lee, \{Heon Bok\} and An, \{Hyun Su\} and Cho, \{Hyun Ick\} and Lee, \{Jung Hee\} and Hahm, \{Sung Ho\}",

year = "2006",

month = aug,

doi = "10.1109/LED.2006.879044",

language = "English",

volume = "27",

pages = "656--658",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - UV photo-responsive characteristics of an n-channel GaN Schottky-barrier MISFET for UV image sensors

AU - Lee, Heon Bok

AU - An, Hyun Su

AU - Cho, Hyun Ick

AU - Lee, Jung Hee

AU - Hahm, Sung Ho

PY - 2006/8

Y1 - 2006/8

N2 - The ultraviolet (UV) responsive properties of the enhancement-mode n-channel Schottky-barrier MISFET (SB-MISFET), which was fabricated on a p-type GaN layer grown on silicon substrate, were investigated. The drain leakage current of the MISFET is less than 1 nA/mm2, which is quite low compared to recently reported photodetectors. The MISFET exhibited a cutoff wavelength of 365 nm, and the UV/visible rejection ratio was about 120 near the threshold voltage. This is the first demonstration of the MISFET-type UV photodetector, which is highly applicable to the UV image sensors.

AB - The ultraviolet (UV) responsive properties of the enhancement-mode n-channel Schottky-barrier MISFET (SB-MISFET), which was fabricated on a p-type GaN layer grown on silicon substrate, were investigated. The drain leakage current of the MISFET is less than 1 nA/mm2, which is quite low compared to recently reported photodetectors. The MISFET exhibited a cutoff wavelength of 365 nm, and the UV/visible rejection ratio was about 120 near the threshold voltage. This is the first demonstration of the MISFET-type UV photodetector, which is highly applicable to the UV image sensors.

KW - GaN

KW - MISFET

KW - Schottky barrier

KW - Ultraviolet (UV) photodetector

UR - https://www.scopus.com/pages/publications/33746487444

U2 - 10.1109/LED.2006.879044

DO - 10.1109/LED.2006.879044

M3 - Article

AN - SCOPUS:33746487444

SN - 0741-3106

VL - 27

SP - 656

EP - 658

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 8

ER -

UV photo-responsive characteristics of an n-channel GaN Schottky-barrier MISFET for UV image sensors

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