UV photoresponse of ag-doped multiple zno nanowires

ZnO nanowires doped with Ag were synthesized on indium-tin-oxide-(ITO)- coated glass substrates at a low temperature of 90 °C using an aqueous-solution method. Nanodevices based on undoped and Ag-doped multiple ZnO nanowires were also successfully fabricated using a method that combined photolithography and electron beam (e-beam) evaporation. The current-voltage (I-V ) characteristics and photoresponses of the pure and Ag-doped multiple ZnO nanowires were measured under UV illumination (λ = 365 nm). The currents of the 0-, 0.05-, and 0.1-mol%-Ag-doped ZnO nanowires under UV illumination were almost 22, 70, and 200 times higher, respectively, than that in the dark at ?10 V. The photoconductivity of the undoped and Ag-doped multiple ZnO nanowire devices increased with the increase of the Ag content in the ZnO nanowires.